Pagina 205 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 807
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  205/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
EGP30FHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 3A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-201AA, DO-27, Axial
Azione6.336
300V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
hot MUR840
ON Semiconductor

DIODE GEN PURP 400V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-220-2
Azione64.464
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 400V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
200HFR120PV
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 200A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 628A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AC, DO-30, Stud
  • Supplier Device Package: DO-205AC (DO-30)
  • Operating Temperature - Junction: -40°C ~ 180°C
pacchetto: DO-205AC, DO-30, Stud
Azione6.320
1200V
200A
1.45V @ 628A
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 1200V
-
Chassis, Stud Mount
DO-205AC, DO-30, Stud
DO-205AC (DO-30)
-40°C ~ 180°C
R9G00618XX
Powerex Inc.

DIODE MODULE 600V 1800A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1800A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25µs
  • Current - Reverse Leakage @ Vr: 150mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
pacchetto: DO-200AB, B-PUK
Azione6.784
600V
1800A
1.2V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
25µs
150mA @ 600V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
VS-SD1100C25L
Vishay Semiconductor Diodes Division

DIODE MODULE 2.5KV 910A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500V
  • Current - Average Rectified (Io): 910A
  • Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 2500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: B-43, PUK
  • Supplier Device Package: B-43, Hockey PUK
  • Operating Temperature - Junction: -
pacchetto: B-43, PUK
Azione5.024
2500V
910A
1.44V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 2500V
-
Stud Mount
B-43, PUK
B-43, Hockey PUK
-
hot 1N5831
GeneSiC Semiconductor

DIODE SCHOTTKY 35V 25A DO4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 25A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-203AA, DO-4, Stud
Azione3.776
35V
25A
580mV @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 20V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-55°C ~ 150°C
VS-ETH3006STRRHM3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 30A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 26ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione2.896
600V
30A
2.65V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
26ns
30µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-65°C ~ 175°C
MURS340-M3/57T
Vishay Semiconductor Diodes Division

DIODE RECT 3A 400V 50NS DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-214AB, SMC
Azione3.216
400V
3A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 175°C
ZHCS506QTA
Diodes Incorporated

DIODE SCHOTTKY 60V 500MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 500mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 40µA @ 45V
  • Capacitance @ Vr, F: 20pF @ 25V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione6.208
60V
500mA (DC)
630mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
40µA @ 45V
20pF @ 25V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 150°C
BYM12-300HE3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 14pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-213AB, MELF (Glass)
Azione5.808
300V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
14pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
SR304HR0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-201AD, Axial
Azione3.824
40V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SS13L M2G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-219AB
Azione7.376
30V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
S2GA M2G
TSC America Inc.

DIODE, 1.5A, 400V, DO-214AC (SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione5.728
400V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 400V
30pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2B-TP
Micro Commercial Co

DIODE GEN PURP 100V 2A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (HSMA)
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione3.072
100V
2A
975mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (HSMA)
-50°C ~ 150°C
IDH08G120C5XKSA1
Infineon Technologies

DIODE SCHOTTKY 1200V 8A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.95V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 40µA @ 1200V
  • Capacitance @ Vr, F: 365pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione8.172
1200V
8A (DC)
1.95V @ 8A
No Recovery Time > 500mA (Io)
0ns
40µA @ 1200V
365pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
STPS20SM120STN
STMicroelectronics

DIODE SCHOTTKY 120V 20A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 890mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 210µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB Narrow Leads
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-220-3
Azione19.944
120V
20A
890mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
210µA @ 120V
-
Through Hole
TO-220-3
TO-220AB Narrow Leads
150°C (Max)
CUS05F30,H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA USC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 30V
  • Capacitance @ Vr, F: 120pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • Operating Temperature - Junction: -
pacchetto: SC-76, SOD-323
Azione100.086
30V
500mA
450mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 30V
120pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
-
PMEG045V150EPDAZ
Nexperia USA Inc.

DIODE SCHOTTKY 45V 15A CFP15

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 19ns
  • Current - Reverse Leakage @ Vr: 900µA @ 15V
  • Capacitance @ Vr, F: 1870pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: CFP15
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: 3-SMD, Flat Leads
Azione32.658
45V
15A
490mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
19ns
900µA @ 15V
1870pF @ 1V, 1MHz
Surface Mount
3-SMD, Flat Leads
CFP15
-65°C ~ 175°C
hot STTH108A
STMicroelectronics

DIODE GEN PURP 800V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: DO-214AC, SMA
Azione966.816
800V
1A
1.65V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
-
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
175°C (Max)
GS1010FL_R1_00001
Panjit International Inc.

DIODE GEN PURP 1KV 1A SOD123FL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: -
Azione15.837
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 1000 V
4pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-50°C ~ 150°C
JAN1N5621-TR
Microchip Technology

DIODE GEN PURP 800V 1A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
800 V
1A
1.6 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
500 nA @ 800 V
-
Through Hole
A, Axial
A, Axial
-65°C ~ 175°C
S2AB-HF
Comchip Technology

DIODE GP 50V 2A SMB/DO-214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB/DO-214AA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
50 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 50 V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB/DO-214AA
-55°C ~ 150°C
VS-15EVH06-M3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A SLIMDPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
600 V
15A
2.1 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
20 µA @ 600 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
SlimDPAK
-55°C ~ 175°C
1N3595US-TR
Microchip Technology

DIODE GEN PURP 4A B SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 1 nA @ 125 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
-
4A
1 V @ 200 mA
Standard Recovery >500ns, > 200mA (Io)
3 µs
1 nA @ 125 V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 150°C
SGL34-60
Diotec Semiconductor

DIODE SCHOTTKY 60V 500MA DO213AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA, MINI-MELF
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: -
Request a Quote
60 V
500mA
600 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
-
Surface Mount
DO-213AA
DO-213AA, MINI-MELF
-50°C ~ 150°C
AR1FKHM3-I
Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 800V 1A DO219AB

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 120 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 9.3pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
800 V
1A
1.6 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
120 ns
1 µA @ 800 V
9.3pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
ER1Q-LTP
Micro Commercial Co

DIODE GEN PURP 1.2KV 1A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: -
Azione6.537
1200 V
1A
1.85 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 1200 V
45pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-50°C ~ 150°C
JANTX1N5811US-TR
Microchip Technology

DIODE GEN PURP 150V 3A B SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
150 V
3A
875 mV @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
5 µA @ 150 V
60pF @ 10V, 1MHz
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C