Toshiba's third-generation 650 V and 1200 V silicon carbide (SiC) MOSFETs are designed for 400 V and 800 VAC input AC/DC power supplies, photovoltaic (PV) inverters, and bidirectional DC/DC for uninterruptible power supplies (UPS). designed for high power industrial applications such as DC converters.
These MOSFETs help reduce power dissipation and increase power density because SiC technology allows the device to provide higher withstand voltage, faster switching, and lower on-resistance. Toshiba's third-generation chip design provides enhanced reliability. This 650 V product features 4,850 pF input capacitance (CISS, typical), a low gate input charge (QG, typical) of 128 nC, and a drain-to-source on-resistance (RDS(ON), typical) of only 15 mΩ.
In addition, the 1,200 V product offers the same low 6000 pF input capacitance (CISS, typ), 158 nC gate input charge (QG, typ), and 15 mΩ drain-source on-resistance (RDS(ON) typ). Both the 650 V and 1,200 V SiC MOSFETs are packaged in the industry standard three-lead TO-247 package.
