Toshiba Electronics Europe LTD has released a new 150V N-channel power MOSFET that reduces the peak voltage between drain and source throughout the switching process, improving EMI performance within the switching power supply. In addition, the latest generation OF U-MOSX-H process is adopted to significantly reduce the loss.
The new equipment is suitable for a variety of applications, including switching power supplies in industrial equipment, as well as applications in communication base stations and data centers.
Compared to the existing 150V product (TPH1500CNH) based ON the current generation u-mosviii-h process, the new TPH9R00CQH MOSFET provides a very low drain-source conduction resistance (RDS(ON)) of only 9mOhm (maximum @vgs =10V). That represents a reduction of about 42 percent. Key FoM, including RDS(ON) X QSW and RDS(ON) X QOSS, were down about 20% and 28%, respectively, further improving performance.
The total gate charge (Qg) of the device is only 44nC and the gate switch charge (QSW) is 11.7NC, showing excellent performance, especially in high-speed applications. The charge characteristics are enhanced by careful optimization of device structure.
To meet the need to choose any application. The new device is available in two SMD package options - SOP Advance(5mm x 6mm) and SOP Advance(N) (4.9mm x 6.1mm).
