IRF540 MOSFET: Test Circuit, Pinout and Features | Heisener Electronics
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IRF540 MOSFET: Test Circuit, Pinout and Features

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Data di Pubblicazione: 2024-09-11, Infineon Technologies

RF540 Introduction

The IRF540 MOSFET series uses STMicroelectronics' unique STripFET process to minimize input capacitance and gate charge. This design makes the IRF540 particularly well-suited as the primary switch in advanced, high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. Additionally, this MOSFET is ideal for any application with low gate drive requirements. The optimized characteristics of the IRF540 not only enhance switching performance but also reduce energy loss, making it a popular choice for high-performance electronic systems.

IRF540 Pinout


The pins of IRF540 are as follows:

D (Drain): Current flows through here when the MOSFET is on.

G (Gate): Controls the MOSFET’s switching.

S (Source): Current exits through this pin; usually connected to ground.

IRF540 Symbol


IRF540 Footprint


IRF540 3D Model


IRF540 Test Circuit


Unclamped Inductive Load Test Circuit 


Unclamped Inductive Waveform


Switching Times Test Circuits For Resistive Load 


Gate Charge test Circuit 


Test Circuit For Inductive Load Switching And Diode Recovery Times 

IRF540 Specification

Parameter

Value

Drain-Source Voltage (Vds)

100V

Gate-Source Voltage (Vgs)

±20V

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Pulsed Drain Current (Id)

110A

Rds(on)

0.044Ω

Rds On (Max) @ Id, Vgs

77mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

870 pF @ 25 V

Power Dissipation (Max)

85W (Tc)

Operating Temperature Range

-55°C - 175°C

Total Gate Charge (Qg)

67 nC

Rise Time (tr)

52 ns

Fall Time (tf)

45 ns

Package Type

TO-220


IRF540 Features

Typical RDS(on) = 0.055Ω

Exceptional dv/dt Capability

100% Avalanche Tested

Low Gate Charge

Application Orientedo

Diode is Characterized for Use in Bridge Circuits

IDSS and VDS(on) Specified at Elevated Temperature

Repetitive Avalanche Rated

Fast Switching

Ease of Paralleling

Simple Drive Requirements

IRF540 Applications

High-efficiency DC-DC Converters

UPS and Motor Control

Power Supplies

Bridge Circuits

Telecommunication Equipment

Computer Hardware

Battery Management Systems

IRF540 Package

The IRF540 MOSFET is housed in a TO-220 package, which is a standard and widely used package for power transistors. This package is known for its excellent thermal dissipation properties, making it suitable for high-power applications. The TO-220 package features three pins—drain,a gate, and source—arranged for easy mounting on a PCB or heat sink. 

FAQs

What is the IRF540 MOSFET used for?


The IRF540 is commonly used in power supplies, motor control circuits, DC-DC converters, and switching applications.

Is the IRF540 suitable for logic-level drive?

No, the IRF540 is not a logic-level MOSFET, so it requires a higher gate drive voltage, typically around 10V, for optimal switching.

What is the typical turn-on and turn-off time of the IRF540?

The typical turn-on time is 35ns, and the turn-off time is around 67ns, which makes it suitable for fast switching applications.

What are some alternatives to the IRF540?

Some alternatives to the IRF540 include the IRF640, IRF530, STP55NF06, and more.

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