Renesas Electronics has developed a new technology that enables a smaller installation area and better power efficiency. It is made up of two 2.4GHz rf transceiver technologies that support the Low power Bluetooth NFC standard.
In addition to being compact, low-cost, and energy efficient, iot devices must provide flexible support for Bluetooth LE, regardless of its implementation format. The company has developed two new technologies to meet these needs: a matching circuit technology that covers a wide impedance range and allows aN IC to match various antenna and plate impedances without an external impedance matching circuit; And a signal correction technique for locally generated reference signals using a small circuit to self-correct inconsistencies and changes in surrounding conditions in circuit elements without calibration.
Leveraging new technologies, the company has demonstrated the effectiveness of these technologies on a prototype Bluetooth LE RF transceiver circuit built using a 22-nm CMOS process. Reduced the circuit area, including the power supply, to 0.84mm2, which is the smallest of its kind in the world. They provide first-class power efficiency, consuming 3.6mW and 4.1mW during reception and transmission, respectively. This is achieved by modifying the receiver architecture to reduce the number of inductors and enhancements, including low current baseband amplifiers with small mounting areas and efficient Class D amplifiers. These advances enable smaller sizes, lower board costs, and lower power consumption, while simplifying the board design process.
These technologies are applicable to different RF transceivers and Bluetooth LE, and Renesas is currently researching the practical application of these technologies.
