Pagina 55 - Prodotti Vishay Semiconductor Diodes Division - Diodi - Raddrizzatori - Singoli

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MMBD6050-E3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 70V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C (Max)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione5.792	70V	200mA	1.1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C (Max)
MMBD914-E3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C (Max)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione4.880	100V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C (Max)
MMBD6050-E3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 70V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C (Max)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione5.328	70V	200mA	1.1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C (Max)
LL4154-M-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 35V 300MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 25V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-213AC, MINI-MELF, SOD-80	Azione5.584	35V	300mA	1V @ 30mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 25V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
LL4154-M-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 35V 300MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 25V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-213AC, MINI-MELF, SOD-80	Azione6.752	35V	300mA	1V @ 30mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 25V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
BAW27-TR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 60V 600MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 600mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 100nA @ 60V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione6.704	60V	600mA (DC)	1.25V @ 400mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	100nA @ 60V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
BAW27-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 60V 600MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 600mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 100nA @ 60V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione7.808	60V	600mA (DC)	1.25V @ 400mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	100nA @ 60V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
LL4148-M-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 300MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-213AC, MINI-MELF, SOD-80	Azione60.000	100V	300mA	1V @ 50mA	Fast Recovery =< 500ns, > 200mA (Io)	8ns	25nA @ 20V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
LS4150GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 600MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: SOD-80 Variant	Azione7.984	50V	600mA	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	2.5pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	175°C (Max)
LL4148-M-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 300MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-213AC, MINI-MELF, SOD-80	Azione4.576	100V	300mA	1V @ 50mA	Fast Recovery =< 500ns, > 200mA (Io)	8ns	25nA @ 20V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
LS4151GS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 300MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: SOD-80 Variant	Azione4.672	50V	300mA	1V @ 50mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	175°C (Max)
LS4151-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 300MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: SOD-80 Variant	Azione4.064	50V	300mA	1V @ 50mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	175°C (Max)
LL4151-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 300MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-213AC, MINI-MELF, SOD-80	Azione120.000	50V	300mA	1V @ 50mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
LS4154GS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 25V 150MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 25V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: SOD-80 Variant	Azione5.104	25V	150mA	1V @ 30mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 25V	4pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	175°C (Max)
LL4154-GS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 35V 300MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 25V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-213AC, MINI-MELF, SOD-80	Azione5.392	35V	300mA	1V @ 30mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 25V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
LS4154GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 25V 150MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 25V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: SOD-80 Variant	Azione2.000	25V	150mA	1V @ 30mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 25V	4pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	175°C (Max)
LL4154-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 35V 300MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 25V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-213AC, MINI-MELF, SOD-80	Azione2.560	35V	300mA	1V @ 30mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 25V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
BAV21-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 250MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione100.800	200V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 150V	1.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N4150TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AH, DO-35, Axial	Azione3.392	50V	150mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	2.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
LS4448GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: SOD-80 Variant	Azione5.216	75V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	8ns	25nA @ 20V	4pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	175°C (Max)
LL4448-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 300MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-213AC, MINI-MELF, SOD-80	Azione1.440.000	75V	300mA	1V @ 50mA	Fast Recovery =< 500ns, > 200mA (Io)	8ns	25nA @ 20V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
BAV20-TR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 250MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione4.000	150V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 150V	1.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
BAV18-TR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 250MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione3.504	50V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 50V	1.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
BAV17-TR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 20V 250MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 20V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione2.112	20V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 20V	1.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
BAV20-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 250MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione3.456	150V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 150V	1.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
BAV19-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 250MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 100V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione6.064	100V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 100V	1.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
BAV18-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 250MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione4.848	50V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 50V	1.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
BAV17-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 20V 250MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 20V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione5.168	20V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 20V	1.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)

MMBD6050-E3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 70V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C (Max)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione5.792

70V

200mA

1.1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 50V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

150°C (Max)

MMBD914-E3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C (Max)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione4.880

100V

200mA

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

150°C (Max)

MMBD6050-E3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 70V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C (Max)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione5.328

70V

200mA

1.1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 50V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

150°C (Max)

LL4154-M-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 35V 300MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-213AC, MINI-MELF, SOD-80

Azione5.584

35V

300mA

1V @ 30mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 25V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

175°C (Max)

LL4154-M-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 35V 300MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-213AC, MINI-MELF, SOD-80

Azione6.752

35V

300mA

1V @ 30mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 25V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

175°C (Max)

BAW27-TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 60V 600MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 600mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 100nA @ 60V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione6.704

60V

600mA (DC)

1.25V @ 400mA

Fast Recovery =< 500ns, > 200mA (Io)

6ns

100nA @ 60V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

BAW27-TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 60V 600MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 600mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 100nA @ 60V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione7.808

60V

600mA (DC)

1.25V @ 400mA

Fast Recovery =< 500ns, > 200mA (Io)

6ns

100nA @ 60V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

LL4148-M-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 300MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-213AC, MINI-MELF, SOD-80

Azione60.000

100V

300mA

1V @ 50mA

Fast Recovery =< 500ns, > 200mA (Io)

8ns

25nA @ 20V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

175°C (Max)

LS4150GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 600MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: SOD-80 Variant

Azione7.984

50V

600mA

1V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 50V

2.5pF @ 0V, 1MHz

Surface Mount

SOD-80 Variant

SOD-80 QuadroMELF

175°C (Max)

LL4148-M-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 300MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-213AC, MINI-MELF, SOD-80

Azione4.576

100V

300mA

1V @ 50mA

Fast Recovery =< 500ns, > 200mA (Io)

8ns

25nA @ 20V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

175°C (Max)

LS4151GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 300MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: SOD-80 Variant

Azione4.672

50V

300mA

1V @ 50mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

50nA @ 50V

2pF @ 0V, 1MHz

Surface Mount

SOD-80 Variant

SOD-80 QuadroMELF

175°C (Max)

LS4151-GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 300MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: SOD-80 Variant

Azione4.064

50V

300mA

1V @ 50mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

50nA @ 50V

2pF @ 0V, 1MHz

Surface Mount

SOD-80 Variant

SOD-80 QuadroMELF

175°C (Max)

LL4151-GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 300MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-213AC, MINI-MELF, SOD-80

Azione120.000

50V

300mA

1V @ 50mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

50nA @ 50V

2pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

175°C (Max)

LS4154GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 25V 150MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: SOD-80 Variant

Azione5.104

25V

150mA

1V @ 30mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 25V

4pF @ 0V, 1MHz

Surface Mount

SOD-80 Variant

SOD-80 QuadroMELF

175°C (Max)

LL4154-GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 35V 300MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-213AC, MINI-MELF, SOD-80

Azione5.392

35V

300mA

1V @ 30mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 25V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

175°C (Max)

LS4154GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 25V 150MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: SOD-80 Variant

Azione2.000

25V

150mA

1V @ 30mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 25V

4pF @ 0V, 1MHz

Surface Mount

SOD-80 Variant

SOD-80 QuadroMELF

175°C (Max)

LL4154-GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 35V 300MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-213AC, MINI-MELF, SOD-80

Azione2.560

35V

300mA

1V @ 30mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 25V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

175°C (Max)

BAV21-TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 250MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 150V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione100.800

200V

250mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 150V

1.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

1N4150TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AH, DO-35, Axial

Azione3.392

50V

150mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 50V

2.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

LS4448GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: SOD-80 Variant

Azione5.216

75V

150mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

8ns

25nA @ 20V

4pF @ 0V, 1MHz

Surface Mount

SOD-80 Variant

SOD-80 QuadroMELF

175°C (Max)

LL4448-GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 300MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-213AC, MINI-MELF, SOD-80

Azione1.440.000

75V

300mA

1V @ 50mA

Fast Recovery =< 500ns, > 200mA (Io)

8ns

25nA @ 20V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

175°C (Max)

BAV20-TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 250MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 150V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione4.000

150V

250mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 150V

1.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

BAV18-TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 250MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione3.504

50V

250mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 50V

1.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

BAV17-TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 20V 250MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 20V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione2.112

20V

250mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 20V

1.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

BAV20-TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 250MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 150V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione3.456

150V

250mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 150V

1.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

BAV19-TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 250MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 100V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione6.064

100V

250mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 100V

1.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

BAV18-TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 250MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione4.848

50V

250mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 50V

1.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

BAV17-TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 20V 250MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 20V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione5.168

20V

250mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 20V

1.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)