Pagina 53 - Prodotti Vishay Semiconductor Diodes Division - Diodi - Raddrizzatori - Singoli | Heisener Electronics
Contattaci
SalesDept@heisener.com 86-755-83210559 x831
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Prodotti Vishay Semiconductor Diodes Division - Diodi - Raddrizzatori - Singoli

Record 10.373
Pagina  53/371
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
VS-C4PH6006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X30A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-3
Azione5.264
600V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
50µA @ 600V
-
Through Hole
TO-247-3
TO-247AD
-55°C ~ 175°C
VS-C4PU6006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X30A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-3
Azione4.480
600V
30A
1.6V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
50µA @ 600V
-
Through Hole
TO-247-3
TO-247AD
-55°C ~ 175°C
VS-E4PH3006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione5.200
600V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
50µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-E4PU3006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione3.328
600V
30A
1.6V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
50µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-E4PH6006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 68ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione5.520
600V
60A
2V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
68ns
50µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-E4PU6006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 74ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione2.736
600V
60A
1.7V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
74ns
50µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-8EWS08STR-M3
Vishay Semiconductor Diodes Division

DIODE RECTIFIER 800V 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.064
800V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 800V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-55°C ~ 150°C
VS-C4PH3006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X15A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-3
Azione6.640
600V
15A
1.9V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
15µA @ 600V
-
Through Hole
TO-247-3
TO-247AD
-55°C ~ 175°C
VS-C4PU3006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X15A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-3
Azione3.216
600V
15A
1.55V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
15µA @ 600V
-
Through Hole
TO-247-3
TO-247AD
-55°C ~ 175°C
VS-EPU3006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione4.128
600V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
30µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-EPH3006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 26ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione7.408
600V
30A
2.65V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
26ns
30µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-APH3006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 26ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-3
Azione6.176
600V
30A
2.65V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
26ns
30µA @ 600V
-
Through Hole
TO-247-3
TO-247AD
-55°C ~ 175°C
VS-30ETU12THN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1200V 30A TO-220

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 220ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione3.504
-
30A
-
Fast Recovery =< 500ns, > 200mA (Io)
220ns
-
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
VS-E4PH3006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione2.816
600V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
50µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-E4PU3006L-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione4.736
600V
30A
1.6V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
50µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-30ETU12T-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1200V 30A TO-220

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 220ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione4.000
-
30A
-
Fast Recovery =< 500ns, > 200mA (Io)
220ns
-
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
VS-ETX3007THN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 650V 30A TO-220 2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 30µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione3.440
650V
30A
2.5V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
30µA @ 650V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
VS-ETH3007THN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 650V 30A TO-220 2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 37ns
  • Current - Reverse Leakage @ Vr: 30µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione7.184
650V
30A
2.1V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
37ns
30µA @ 650V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
VS-50WQ10FN-M3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 5.5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5.5A
  • Voltage - Forward (Vf) (Max) @ If: 770mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Capacitance @ Vr, F: 183pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.368
100V
5.5A
770mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
183pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
VS-50WQ04FN-M3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5.5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 5.5A
  • Voltage - Forward (Vf) (Max) @ If: 510mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 405pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.088
40V
5.5A
510mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
-
405pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
VS-50WQ03FN-M3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 5.5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 5.5A
  • Voltage - Forward (Vf) (Max) @ If: 460mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 30V
  • Capacitance @ Vr, F: 590pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.856
30V
5.5A
460mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 30V
590pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
VS-ETX3007T-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 650V 30A TO-220 2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 30µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione6.864
650V
30A
2.5V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
30µA @ 650V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
VS-ETH3007T-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 650V 30A TO-220 2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 37ns
  • Current - Reverse Leakage @ Vr: 30µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione6.192
650V
30A
2.1V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
37ns
30µA @ 650V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
VS-E4TU2006TFP-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 20A TO-220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 61ns
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220-2 Full Pack
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2 Full Pack
Azione4.816
600V
20A
-
Fast Recovery =< 500ns, > 200mA (Io)
61ns
15µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220-2 Full Pack
-55°C ~ 175°C
V35PWM15HM3/I
Vishay Semiconductor Diodes Division

RECT SCHKY 35A 150V SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 150V
  • Capacitance @ Vr, F: 1620pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.984
150V
35A
1.4V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 150V
1620pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 175°C
V35PW15HM3/I
Vishay Semiconductor Diodes Division

RECT SCHKY 35A 150V SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 150V
  • Capacitance @ Vr, F: 1620pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.792
150V
35A
1.4V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 150V
1620pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 150°C
V35PWM10HM3/I
Vishay Semiconductor Diodes Division

RECT SCHKY 35A 100V SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 100V
  • Capacitance @ Vr, F: 2500pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.024
100V
35A
900mV @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 100V
2500pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 175°C
V35PW12HM3/I
Vishay Semiconductor Diodes Division

RECT SCHKY 35A 120V SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 120V
  • Capacitance @ Vr, F: 2350pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.840
120V
35A
1.05V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 120V
2350pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 150°C