Prodotti Toshiba Semiconductor and Storage

TK60S06K3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 60A DPAK-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 88W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

2SC4213BTE85LF

Toshiba Semiconductor and Storage

TRANS NPN 20V 0.3A USM

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 300mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
• Power - Max: 100mW
• Frequency - Transition: 30MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

pacchetto: SC-70, SOT-323

1SV305,H3F

Toshiba Semiconductor and Storage

DIODE VARACTOR 10V ESC

• Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
• Capacitance Ratio: 3
• Capacitance Ratio Condition: C1/C4
• Voltage - Peak Reverse (Max): 10V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: ESC

pacchetto: SC-79, SOD-523

DSF07S30U(TPH3,F)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 700MA USC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 700mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 30V
• Capacitance @ Vr, F: 170pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: USC
• Operating Temperature - Junction: 125°C (Max)

pacchetto: SC-76, SOD-323

TCR2LN30,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3V 200MA 4-SDFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.28V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

pacchetto: 4-XFDFN Exposed Pad

TCR5AM07,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 0.7V 500MA 5DFNB

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.7V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 55µA ~ 68µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 5-DFNB (1.2x1.2)

pacchetto: 4-XDFN Exposed Pad

TCK111G,LF

Toshiba Semiconductor and Storage

IC POWER DIST LOAD SWITCH 6WCSP

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 1.1 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3A
• Rds On (Typ): 8.3 mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: Over Temperature, Reverse Current
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UFBGA, WLCSP
• Supplier Device Package: 6-WCSPC (1.5x1.0)

pacchetto: 6-UFBGA, WLCSP

TA7267BP(O)

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 7HSIP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel
• Technology: Bipolar
• Step Resolution: -
• Applications: Media Player
• Current - Output: 1A
• Voltage - Supply: 6 V ~ 18 V
• Voltage - Load: 0 V ~ 18 V
• Operating Temperature: -30°C ~ 75°C (TA)
• Mounting Type: Through Hole
• Package / Case: 7-SIP, Exposed Tab
• Supplier Device Package: 7-HSIP

pacchetto: 7-SIP, Exposed Tab

TH58NVG3S0HTA00

Toshiba Semiconductor and Storage

IC EEPROM 8GBIT 25NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 8Gb (1G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

pacchetto: 48-TFSOP (0.724", 18.40mm Width)

TH58BVG2S3HTA00

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

pacchetto: 48-TFSOP (0.724", 18.40mm Width)

TL1L4-LL1,LCS

Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 2700K 2SMD

• Color: White, Warm
• CCT (K): 2700K
• Flux @ 85°C, Current - Test: 115 lm (100 lm ~ 130 lm)
• Flux @ 25°C, Current - Test: -
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.8V
• Lumens/Watt @ Current - Test: 117 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 1.5A
• Viewing Angle: 120°
• Mounting Type: Surface Mount
• Package / Case: 1414 (3535 Metric)
• Supplier Device Package: 3535
• Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
• Height - Seated (Max): 0.085" (2.15mm)

pacchetto: 1414 (3535 Metric)

TLEGD1060(T18)

Toshiba Semiconductor and Storage

LED GREEN 2MINI PLCC SMD

• Color: Green
• Configuration: -
• Lens Color: -
• Lens Transparency: -
• Millicandela Rating: 150mcd
• Lens Style/Size: Rectangle with Flat Top
• Voltage - Forward (Vf) (Typ): 3.3V
• Current - Test: 20mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: 528nm
• Wavelength - Peak: 518nm
• Features: -
• Package / Case: 2-Mini PLCC
• Supplier Device Package: 2-MiniPLCC
• Size / Dimension: 2.00mm L x 1.40mm W
• Height (Max): 1.50mm

pacchetto: 2-Mini PLCC

DF2B20M4SL,L3F

Toshiba Semiconductor and Storage

TVS DIODE 30VC 500MA 2XFDN

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 18.5V (Max)
• Voltage - Breakdown (Min): 19V
• Voltage - Clamping (Max) @ Ipp: 30V
• Current - Peak Pulse (10/1000µs): 500mA (8/20µs)
• Power - Peak Pulse: 15W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 0.2pF @ 1MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: SL2

pacchetto: 0201 (0603 Metric)

TLP4197G(TP,F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 3MA 6-SOP

• Circuit: SPST-NC (1 Form B)
• Output Type: AC, DC
• On-State Resistance (Max): 25 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SOP (0.173", 4.40mm)
• Supplier Device Package: 6-SOP (2.54mm)
• Relay Type: Relay

pacchetto: 6-SOP (0.173", 4.40mm)

TLP283(TP,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV TRANS 4-SOP

• Number of Channels: 1
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): 100% @ 1mA
• Current Transfer Ratio (Max): 400% @ 1mA
• Turn On / Turn Off Time (Typ): 7.5µs, 70µs
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 100V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.173", 4.40mm)
• Supplier Device Package: 4-SOP

pacchetto: 4-SOIC (0.173", 4.40mm)

TLP293(Y-TPL,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 150% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.179", 4.55mm)
• Supplier Device Package: 4-SO

pacchetto: 4-SOIC (0.179", 4.55mm)

TLP105(F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PSH PULL 6MFSOP-5

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 10kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 25mA
• Data Rate: 5Mbps
• Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
• Rise / Fall Time (Typ): 30ns, 30ns
• Voltage - Forward (Vf) (Typ): 1.57V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 4.5 V ~ 20 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads
• Supplier Device Package: 6-MFSOP, 5 Lead

pacchetto: 6-SOIC (0.173", 4.40mm Width) 5 Leads

TB62269FTAG,EL

Toshiba Semiconductor and Storage

STEPPER MOTOR DRIVER IC 40V/1.8A

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-VQFN (5x5)

pacchetto: 32-VFQFN Exposed Pad

74VHC9541FT

Toshiba Semiconductor and Storage

X34 PB-F UNIVERSAL SCHMITT BUFFE

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: Schmitt Trigger
• Output Type: 3-State
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2V ~ 5.5V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOPB

pacchetto: 20-TSSOP (0.173", 4.40mm Width)

TCR3DF19,LM(CT

Toshiba Semiconductor and Storage

300MA LDO VOUT=1.9V DROPOUT=230M

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.4V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

pacchetto: SC-74A, SOT-753

TLP7820(D4-LF4,E

Toshiba Semiconductor and Storage

IC OPAMP ISOLATION 1 CIRCUIT 8SO

• Amplifier Type: Isolation
• Number of Circuits: 1
• Output Type: Differential
• Slew Rate: -
• Gain Bandwidth Product: -
• -3db Bandwidth: 230kHz
• Current - Input Bias: 5.5nA
• Voltage - Input Offset: 900µV
• Current - Supply: 12mA
• Current - Output / Channel: -
• Voltage - Supply, Single/Dual (±): 4.5V ~ 5.5V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.295", 7.50mm Width)

JDH2S02SL-L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 10MA SL2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 10 V
• Current - Average Rectified (Io): 10mA
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25 µA @ 500 mV
• Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: SL2
• Operating Temperature - Junction: 125°C (Max)

pacchetto: -

TC7WH74FU-TE12L

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 8SSOP

• Function: Set(Preset) and Reset
• Type: D-Type
• Output Type: Complementary
• Number of Elements: 1
• Number of Bits per Element: 1
• Clock Frequency: 115 MHz
• Max Propagation Delay @ V, Max CL: 9.3ns @ 5V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2V ~ 5.5V
• Current - Quiescent (Iq): 2 µA
• Input Capacitance: 4 pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

pacchetto: -

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RN4982FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 10kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

pacchetto: -

RN1905FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

pacchetto: -

TCR2EN10-LF-SE

Toshiba Semiconductor and Storage

IC REG LINEAR 1V 200MA 4SDFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.75V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 60 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

pacchetto: -

2SC5714-TE12L-ZF

Toshiba Semiconductor and Storage

TRANS NPN 20V 4A PW-MINI

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4 A
• Voltage - Collector Emitter Breakdown (Max): 20 V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
• Power - Max: 1 W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PW-MINI

pacchetto: -

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TRS3E65F-S1Q

Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 3A TO220-2L

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 20 µA @ 650 V
• Capacitance @ Vr, F: 12pF @ 650V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2L
• Operating Temperature - Junction: 175°C (Max)

pacchetto: -

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