Pagina 86 - Prodotti Toshiba Semiconductor and Storage

Numero di parte	Produttore	Descrizione	pacchetto	Azione
2SK2376(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 45A TO220FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FL Package / Case: TO-220-3, Short Tab	pacchetto: TO-220-3, Short Tab	Azione7.504
T2N7002BK,LM	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 0.4A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione6.640
TPH14006NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 60V 14A 8-SOP ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	pacchetto: 8-PowerVDFN	Azione59.136
SSM6L35FE,LM	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.18A/0.1A ES6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	pacchetto: SOT-563, SOT-666	Azione77.388
TCR2LN18,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 1.8V 200MA 4-SDFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.6V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 2µA PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	pacchetto: 4-XFDFN Exposed Pad	Azione6.880
TA78L15F(TE12L,F)	Toshiba Semiconductor and Storage	IC REG LINEAR 15V 150MA PW-MINI Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 35V Voltage - Output (Min/Fixed): 15V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 6mA ~ 6.5mA PSRR: 40dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -30°C ~ 85°C Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI (SOT-89)	pacchetto: TO-243AA	Azione88.734
TCK107G,LF	Toshiba Semiconductor and Storage	IC POWER DIST LOAD SWITCH 4WCSP Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.1 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Rds On (Typ): 49 mOhm Input Type: Non-Inverting Features: Load Discharge, Slew Rate Controlled Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 4-UFBGA Supplier Device Package: 4-WCSP (0.79x0.79)	pacchetto: 4-UFBGA	Azione24.204
74VHC540FT(BE)	Toshiba Semiconductor and Storage	IC INVERTER 8-INPUT 20TSSOP Logic Type: Buffer, Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	pacchetto: 20-TSSOP (0.173", 4.40mm Width)	Azione30.000
DF2S6M4CT,L3F	Toshiba Semiconductor and Storage	ESD DIODE BI-DIRECTIONAL Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5.5V (Max) Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Current - Peak Pulse (10/1000µs): 2A (8/20µs) Power - Peak Pulse: 30W Power Line Protection: No Applications: - Capacitance @ Frequency: 0.35pF @ 1MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2	pacchetto: SOD-882	Azione5.670
TLP3407S(TP,E	Toshiba Semiconductor and Storage	PHOTORELAY 1A 60V S-VSON4 Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 300 mOhm Load Current: 1A Voltage - Input: 1.26VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.079", 2.00mm) Supplier Device Package: S-VSON4 Relay Type: Relay	pacchetto: 4-SMD (0.079", 2.00mm)	Azione5.040
TLP3420(TP,F	Toshiba Semiconductor and Storage	PHOTORELAY SPST-NO 100MA 100V Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 14 Ohm Load Current: 100mA Voltage - Input: 1.27VDC Voltage - Load: 0 ~ 100 V Mounting Type: Surface Mount Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.096", 2.45mm) Supplier Device Package: 4-VSON Relay Type: Relay	pacchetto: 4-SMD (0.096", 2.45mm)	Azione21.624
TLP293-4(V4-GB,E	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	pacchetto: 16-SOIC (0.179", 4.55mm Width)	Azione8.856
TLP5751(D4,E	Toshiba Semiconductor and Storage	OPTOISO 5KV GATE DRVR SO6L Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 1A, 1A Current - Peak Output: 1A Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO Approvals: CQC, CSA, cUL, UL, VDE	pacchetto: 6-SOIC (0.295", 7.50mm Width)	Azione7.038
TLP5752(D4-TP,E	Toshiba Semiconductor and Storage	OPTOISO 5KV GATE DRVR SO6L Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 2.5A, 2.5A Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO Approvals: CQC, CSA, cUL, UL, VDE	pacchetto: 6-SOIC (0.295", 7.50mm Width)	Azione6.120
RN1310-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SC70 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	pacchetto: -	Azione18.000
RN4902-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: -	Azione9.000
CRZ12-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE ZENER 12V 700MW SFLAT Voltage - Zener (Nom) (Vz): 12 V Tolerance: ±10% Power - Max: 700 mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10 µA @ 8 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5)	pacchetto: -	Azione8.970
TTC011B-Q	Toshiba Semiconductor and Storage	PB-FPOWERTRANSISTORTO-126NPC=10W Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 230 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1.5 W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126N	pacchetto: -	Request a Quote
TMPM3HQFDAFG	Toshiba Semiconductor and Storage	MCU,M3,120MHZ,512KBMEM/66KBRAM,Q Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 120MHz Connectivity: I2C, SPI, UART/USART Peripherals: DMA, LVD, Motor Control PWM, POR, WDT Number of I/O: 135 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH EEPROM Size: 32K x 8 RAM Size: 64K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 21x12b SAR; D/A 2x8b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 144-LQFP Supplier Device Package: 144-LQFP (20x20)	pacchetto: -	Azione180
TDTA143Z-LM	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 320 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	pacchetto: -	Azione9.000
RN2301-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SC70 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	pacchetto: -	Azione9.000
SSM6L820R-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V/20V 4A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	pacchetto: -	Azione17.625
7UL1T00FU-LF	Toshiba Semiconductor and Storage	IC GATE NAND 1CH 2-INP USV Logic Type: NAND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2.3V ~ 3.6V Current - Quiescent (Max): 1 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 2V ~ 2.48V Logic Level - High: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	pacchetto: -	Azione17.667
TW060N120C-S1F	Toshiba Semiconductor and Storage	G3 1200V SIC-MOSFET TO-247 60MO FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 4.2mA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	pacchetto: -	Azione150
TK190U65Z-RQ	Toshiba Semiconductor and Storage	DTMOS VI TOLL PD=130W F=1MHZ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 610µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TOLL Package / Case: 8-PowerSFN	pacchetto: -	Azione6.456
RN1105-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	pacchetto: -	Azione14.949
TRS24N65FB-S1F-S	Toshiba Semiconductor and Storage	DIODE ARR SIC SCHOT 650V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io) (per Diode): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 90 µA @ 650 V Operating Temperature - Junction: 175°C (Max) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	pacchetto: -	Request a Quote
TK25S06N1L-LXHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 25A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Azione10.815

2SK2376(Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 45A TO220FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FL
Package / Case: TO-220-3, Short Tab

pacchetto: TO-220-3, Short Tab

Azione7.504

T2N7002BK,LM

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.4A SOT23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione6.640

TPH14006NH,L1Q

Toshiba Semiconductor and Storage

MOSFET N CH 60V 14A 8-SOP ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs(th) (Max) @ Id: 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 7A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

pacchetto: 8-PowerVDFN

Azione59.136

SSM6L35FE,LM

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

pacchetto: SOT-563, SOT-666

Azione77.388

TCR2LN18,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 200MA 4-SDFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.6V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 2µA
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

pacchetto: 4-XFDFN Exposed Pad

Azione6.880

TA78L15F(TE12L,F)

Toshiba Semiconductor and Storage

IC REG LINEAR 15V 150MA PW-MINI

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 35V
Voltage - Output (Min/Fixed): 15V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 6mA ~ 6.5mA
PSRR: 40dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI (SOT-89)

pacchetto: TO-243AA

Azione88.734

TCK107G,LF

Toshiba Semiconductor and Storage

IC POWER DIST LOAD SWITCH 4WCSP

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.1 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Rds On (Typ): 49 mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 4-UFBGA
Supplier Device Package: 4-WCSP (0.79x0.79)

pacchetto: 4-UFBGA

Azione24.204

74VHC540FT(BE)

Toshiba Semiconductor and Storage

IC INVERTER 8-INPUT 20TSSOP

Logic Type: Buffer, Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

pacchetto: 20-TSSOP (0.173", 4.40mm Width)

Azione30.000

DF2S6M4CT,L3F

Toshiba Semiconductor and Storage

ESD DIODE BI-DIRECTIONAL

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Power - Peak Pulse: 30W
Power Line Protection: No
Applications: -
Capacitance @ Frequency: 0.35pF @ 1MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2

pacchetto: SOD-882

Azione5.670

TLP3407S(TP,E

Toshiba Semiconductor and Storage

PHOTORELAY 1A 60V S-VSON4

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 300 mOhm
Load Current: 1A
Voltage - Input: 1.26VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: SMD (SMT) Tab
Package / Case: 4-SMD (0.079", 2.00mm)
Supplier Device Package: S-VSON4
Relay Type: Relay

pacchetto: 4-SMD (0.079", 2.00mm)

Azione5.040

TLP3420(TP,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 100MA 100V

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 14 Ohm
Load Current: 100mA
Voltage - Input: 1.27VDC
Voltage - Load: 0 ~ 100 V
Mounting Type: Surface Mount
Termination Style: SMD (SMT) Tab
Package / Case: 4-SMD (0.096", 2.45mm)
Supplier Device Package: 4-VSON
Relay Type: Relay

pacchetto: 4-SMD (0.096", 2.45mm)

Azione21.624

TLP293-4(V4-GB,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Number of Channels: 4
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

pacchetto: 16-SOIC (0.179", 4.55mm Width)

Azione8.856

TLP5751(D4,E

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRVR SO6L

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Rise / Fall Time (Typ): 15ns, 8ns
Current - Output High, Low: 1A, 1A
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 15 V ~ 30 V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 6-SO
Approvals: CQC, CSA, cUL, UL, VDE

pacchetto: 6-SOIC (0.295", 7.50mm Width)

Azione7.038

TLP5752(D4-TP,E

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRVR SO6L

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Rise / Fall Time (Typ): 15ns, 8ns
Current - Output High, Low: 2.5A, 2.5A
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 15 V ~ 30 V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 6-SO
Approvals: CQC, CSA, cUL, UL, VDE

pacchetto: 6-SOIC (0.295", 7.50mm Width)

Azione6.120

RN1310-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

pacchetto: -

Azione18.000

RN4902-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: -

Azione9.000

CRZ12-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE ZENER 12V 700MW SFLAT

Voltage - Zener (Nom) (Vz): 12 V
Tolerance: ±10%
Power - Max: 700 mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)

pacchetto: -

Azione8.970

TTC011B-Q

Toshiba Semiconductor and Storage

PB-FPOWERTRANSISTORTO-126NPC=10W

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 1.5 W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126N

pacchetto: -

Request a Quote

TMPM3HQFDAFG

Toshiba Semiconductor and Storage

MCU,M3,120MHZ,512KBMEM/66KBRAM,Q

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 120MHz
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Number of I/O: 135
Program Memory Size: 512KB (512K x 8)
Program Memory Type: FLASH
EEPROM Size: 32K x 8
RAM Size: 64K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 21x12b SAR; D/A 2x8b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Supplier Device Package: 144-LQFP (20x20)

pacchetto: -

Azione180

TDTA143Z-LM

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

pacchetto: -

Azione9.000

RN2301-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

pacchetto: -

Azione9.000

SSM6L820R-LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

pacchetto: -

Azione17.625

7UL1T00FU-LF

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP USV

Logic Type: NAND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2.3V ~ 3.6V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 2V ~ 2.48V
Logic Level - High: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

pacchetto: -

Azione17.667

TW060N120C-S1F

Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 60MO

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

pacchetto: -

Azione150

TK190U65Z-RQ

Toshiba Semiconductor and Storage

DTMOS VI TOLL PD=130W F=1MHZ

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 610µA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: TOLL
Package / Case: 8-PowerSFN

pacchetto: -

Azione6.456

RN1105-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

pacchetto: -

Azione14.949

TRS24N65FB-S1F-S

Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOT 650V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io) (per Diode): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Operating Temperature - Junction: 175°C (Max)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

pacchetto: -

Request a Quote

TK25S06N1L-LXHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

Azione10.815