Prodotti Toshiba Semiconductor and Storage

TPCF8B01(TE85L,F,M

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2.7A VS-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
• Vgs (Max): ±8V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 330mW (Ta)
• Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: VS-8 (2.9x1.5)
• Package / Case: 8-SMD, Flat Lead

pacchetto: 8-SMD, Flat Lead

TK380P65Y,RQ

Toshiba Semiconductor and Storage

MOSFET TRANSISTOR DPAK(OS) PD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 360µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

2SC2383-Y(T6DNS,FM

Toshiba Semiconductor and Storage

TRANS NPN 1A 160V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 160V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

RN1442ATE85LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 300mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 30MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

pacchetto: TO-236-3, SC-59, SOT-23-3

2SC4215-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ USM

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: 550MHz
• Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
• Gain: 17dB ~ 23dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
• Current - Collector (Ic) (Max): 20mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

pacchetto: SC-70, SOT-323

RN1970(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

TCR13AGADJ,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.3A 6WCSP

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 1.3A
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-XFBGA, WLCSP
• Supplier Device Package: 6-WCSP (1.2x0.80)

pacchetto: 6-XFBGA, WLCSP

TCK322G,LF

Toshiba Semiconductor and Storage

IC MUX LOAD SW 36V DUAL 16WCSP

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 2:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 2.3 V ~ 36 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2A
• Rds On (Typ): 98 mOhm
• Input Type: -
• Features: Slew Rate Controlled, Status Flag
• Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

TB62215AFTG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1, 1/2, 1/4
• Applications: General Purpose
• Current - Output: 3A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 38 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

pacchetto: 48-VFQFN Exposed Pad

TB62213AFTG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1, 1/2, 1/4
• Applications: General Purpose
• Current - Output: 2.4A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 38 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

pacchetto: 48-VFQFN Exposed Pad

TC74LVX08FTELM

Toshiba Semiconductor and Storage

IC GATE AND 4CH 2-INP 14-TSSOP

• Logic Type: AND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 3.6 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.5 V ~ 0.8 V
• Logic Level - High: 1.5 V ~ 2.4 V
• Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

pacchetto: 14-TSSOP (0.173", 4.40mm Width)

TC7SH34F,LJ(CT

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 5.5V SMV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

pacchetto: SC-74A, SOT-753

TL1L3-NW0,L

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

• Color: White, Cool
• CCT (K): 5000K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 145 lm (Typ)
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.85V
• Lumens/Watt @ Current - Test: 145 lm/W
• CRI (Color Rendering Index): 70
• Current - Max: 1A
• Viewing Angle: 100°
• Mounting Type: Surface Mount
• Package / Case: 1414 (3535 Metric)
• Supplier Device Package: 3535
• Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
• Height - Seated (Max): 0.099" (2.52mm)

pacchetto: 1414 (3535 Metric)

TL3GB-LL1,L

Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 2700K 2SMD

• Color: White, Warm
• CCT (K): 2700K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 61 lm (56 lm ~ 66 lm)
• Current - Test: 100mA
• Voltage - Forward (Vf) (Typ): 5.76V
• Lumens/Watt @ Current - Test: 106 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 200mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Package / Case: 1212 (3030 Metric)
• Supplier Device Package: 3030
• Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm)
• Height - Seated (Max): 0.030" (0.77mm)

pacchetto: 1212 (3030 Metric)

DF3D18FU,LF

Toshiba Semiconductor and Storage

TVS DIODE 12VWM 33VC

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 16.2V
• Voltage - Clamping (Max) @ Ipp: 33V
• Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
• Power - Peak Pulse: 80W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 9pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

pacchetto: SC-70, SOT-323

DF2B5M4SL,L3F

Toshiba Semiconductor and Storage

TVS DIODE 3.6VWM 24VC SL2-2

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 3.6V (Max)
• Voltage - Breakdown (Min): 4V
• Voltage - Clamping (Max) @ Ipp: 24V
• Current - Peak Pulse (10/1000µs): 2A (8/20µs)
• Power - Peak Pulse: 30W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 0.2pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: SL2

pacchetto: 0201 (0603 Metric)

TLP3130(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 4-SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 8 Ohm
• Load Current: 160mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 20 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP (2.54mm)
• Relay Type: Relay

pacchetto: 4-SOP (0.173", 4.40mm)

TLP176D(F)

Toshiba Semiconductor and Storage

PHOTOCOUPLER GAAS IRED/FET 4-SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 8 Ohm
• Load Current: 200mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 200 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP (2.54mm)
• Relay Type: Relay

pacchetto: 4-SOP (0.173", 4.40mm)

TC7SZ04AFS,L3J

Toshiba Semiconductor and Storage

IC INVERTER 1CH 1-INP FSV

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: fSV
• Package / Case: SOT-953

pacchetto: SOT-953

HN1A01FE-GR-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + PNP TR VCEO:-50

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

pacchetto: -

TRS12N65FB-S1Q

Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOTT 650V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io) (per Diode): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 30 µA @ 650 V
• Operating Temperature - Junction: 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

pacchetto: -

CMS30I30A-TE12L-QM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A M-FLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 30 V
• Capacitance @ Vr, F: 82pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)
• Operating Temperature - Junction: 150°C (Max)

pacchetto: -

XPH4R714MC-L1XHQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 60A 8SOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 960mW (Ta), 132W (Tc)
• Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

pacchetto: -

TCR3RM10A-LF-SE

Toshiba Semiconductor and Storage

LDO REG 1.0V 300MA 4DFNC

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 300mA
• Current - Quiescent (Iq): 12 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 4-DFNC (1x1)

pacchetto: -

2SA1987-O-Q

Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO3P

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 15 A
• Voltage - Collector Emitter Breakdown (Max): 230 V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
• Current - Collector Cutoff (Max): 5µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
• Power - Max: 180 W
• Frequency - Transition: 30MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PL
• Supplier Device Package: TO-3P(L)

pacchetto: -

74VHC174FT

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 6BIT 16TSSOPB

• Function: Master Reset
• Type: D-Type
• Output Type: Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 6
• Clock Frequency: 120 MHz
• Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2V ~ 5.5V
• Current - Quiescent (Iq): 4 µA
• Input Capacitance: 4 pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)

pacchetto: -

CRS15I30B-TE85L-QM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A S-FLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 30 V
• Capacitance @ Vr, F: 82pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)
• Operating Temperature - Junction: 150°C (Max)

pacchetto: -

TK33S10N1L-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 33A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -