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Prodotti Toshiba Semiconductor and Storage

Record 4.549
Pagina  139/163
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
2SJ438(CANO,Q,M)
Toshiba Semiconductor and Storage

MOSFET P-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220NIS
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione3.680
hot TK4P55D(T6RSS-Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 550V 4A DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.88 Ohm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione48.000
TPC8115(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 10A SOP8 2-6J1B

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP (5.5x6.0)
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
pacchetto: 8-SOIC (0.173", 4.40mm Width)
Azione5.136
TPC8031-H(TE12LQM)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 11A SOP8 2-6J1B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP (5.5x6.0)
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
pacchetto: 8-SOIC (0.173", 4.40mm Width)
Azione7.392
TK6A55DA(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 550V 5.5A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.48 Ohm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione4.688
TPH2R608NH,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 75V 150A SOP8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 37.5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 142W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacchetto: 8-PowerVDFN
Azione2.384
2SD2129,LS4ALPSQ(M
Toshiba Semiconductor and Storage

TRANS NPN 3A 100V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacchetto: TO-220-3 Full Pack
Azione3.840
2SC2482(FJTN,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 100MA 300V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
pacchetto: TO-226-3, TO-92-3 Long Body
Azione3.488
2SA1020-Y(T6TR1,AF
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
pacchetto: TO-226-3, TO-92-3 Long Body
Azione3.616
2SA1312GRTE85LF
Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A S-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione84.378
RN1911FETE85LF
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
pacchetto: SOT-563, SOT-666
Azione31.152
CLH02(TE16R,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 300V 3A L-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: L-FLAT?
  • Supplier Device Package: L-FLAT? (4x5.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: L-FLAT?
Azione3.696
HN1D02FU(T5L,F,T)
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA US6

  • Diode Configuration: 2 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: US6
pacchetto: SOT-563, SOT-666
Azione2.384
hot 1SS393,LF
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA SC70

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 40V
  • Operating Temperature - Junction: -40°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
pacchetto: SC-70, SOT-323
Azione35.280
TCR2LE18,LM(CT
Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 200MA ESV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.62V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 2µA
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
pacchetto: SOT-553
Azione5.040
TB62785FTG,EL
Toshiba Semiconductor and Storage

IC LED DRIVER 24VQFN

  • Type: Linear
  • Topology: Shift Register
  • Internal Switch(s): Yes
  • Number of Outputs: 8
  • Voltage - Supply (Min): 4.5V
  • Voltage - Supply (Max): 5.5V
  • Voltage - Output: 17V
  • Current - Output / Channel: 50mA
  • Frequency: -
  • Dimming: -
  • Applications: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VFQFN Exposed Pad
  • Supplier Device Package: 24-VQFN (4x4)
pacchetto: 24-VFQFN Exposed Pad
Azione34.260
TC7SH02FU,LJ
Toshiba Semiconductor and Storage

IC GATE NOR 1CH 2-INP USV

  • Logic Type: NOR Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.5V
  • Logic Level - High: 1.5V
  • Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USV
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
pacchetto: 5-TSSOP, SC-70-5, SOT-353
Azione4.800
DF3A6.2LFU(TE85L,F
Toshiba Semiconductor and Storage

TVS DIODE 5VWM USM

  • Type: Zener
  • Unidirectional Channels: 2
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5V
  • Voltage - Breakdown (Min): 5.9V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 6.5pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
pacchetto: SC-70, SOT-323
Azione3.906
TLP3120(F)
Toshiba Semiconductor and Storage

IC PHOTORELAY 80V 1.25A 6-SOP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 150 mOhm
  • Load Current: 1.25A
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 80 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 6-SOP (0.173", 4.40mm)
  • Supplier Device Package: 6-SOP (2.54mm)
  • Relay Type: Relay
pacchetto: 6-SOP (0.173", 4.40mm)
Azione8.190
TLP291(E)
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 400% @ 5mA
  • Turn On / Turn Off Time (Typ): 7µs, 7µs
  • Rise / Fall Time (Typ): 4µs, 7µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SOIC (0.179", 4.55mm)
  • Supplier Device Package: 4-SO
pacchetto: 4-SOIC (0.179", 4.55mm)
Azione7.182
TLP292-4(V4LATPE
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

  • Number of Channels: 4
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 50% @ 500µA
  • Current Transfer Ratio (Max): 600% @ 500µA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
pacchetto: 16-SOIC (0.179", 4.55mm Width)
Azione16.830
TCR2LN115,LF
Toshiba Semiconductor and Storage

200MA LDO VOUT=1.15V DROPOUT=200

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.15V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.28V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 2µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
pacchetto: 4-XFDFN Exposed Pad
Azione103.608
TCR2EN18-LF-SE
Toshiba Semiconductor and Storage

LDO REG VOUT=1.8V IOUT=200MA

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 60 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
pacchetto: -
Azione29.925
TK16J60W-S1VE
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: -
Azione126
TCTH022BE-LF-CT
Toshiba Semiconductor and Storage

OVER TEMP DETECTION IC IPTCO: 10

  • Type: Thermal
  • Number of Voltages Monitored: 1
  • Output: Open Drain or Open Collector
  • Reset: -
  • Reset Timeout: 214µs Typical
  • Voltage - Threshold: 0.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
pacchetto: -
Azione23.937
TRS12N65FB-S1F-S
Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOTT 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: -
Request a Quote
TK6R7A10PL-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione153
RN2311-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
pacchetto: -
Azione17.820