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Prodotti Toshiba Semiconductor and Storage

Record 4.549
Pagina  10/163
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
TPCA8025(TE12L,Q,M
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 40A 8SOIC ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacchetto: 8-PowerVDFN
Azione6.928
TK12A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 550V 12A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 570 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione3.248
TK560A65Y,S4X
Toshiba Semiconductor and Storage

MOSFET TRANSISTOR TO-220SIS PD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W
  • Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione7.536
TK25N60X,S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 25A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione7.904
SSM3J332R,LF
Toshiba Semiconductor and Storage

MOSFET P CH 30V 6A 2-3Z1A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
pacchetto: SOT-23-3 Flat Leads
Azione313.752
2SC5232BTE85LF
Toshiba Semiconductor and Storage

TRANS NPN 12V 0.5A S-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
  • Power - Max: 150mW
  • Frequency - Transition: 130MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.072
RN4611(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.3W SM6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
pacchetto: SC-74, SOT-457
Azione25.998
JDP2S02AFS(TPL3)
Toshiba Semiconductor and Storage

DIODE PIN 30V 50MA FSC

  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 30V
  • Current - Max: 50mA
  • Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
  • Resistance @ If, F: 1.5 Ohm @ 10mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: fSC
pacchetto: 2-SMD, Flat Lead
Azione94.068
CUS15S30,H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: 200pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: SC-76, SOD-323
Azione22.830
TA76431S(T6MURATFM
Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 100mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
pacchetto: TO-226-3, TO-92-3 Long Body
Azione2.448
TC78S122FTG,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (8)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: 1, 1/2, 1/4
  • Applications: General Purpose
  • Current - Output: 2A
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Voltage - Load: 8 V ~ 38 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: 48-QFN (7x7)
pacchetto: 48-VFQFN Exposed Pad
Azione22.674
TC74ACT157FN
Toshiba Semiconductor and Storage

IC MULIPLEXER QUAD 2-CH 16-SOL

  • Type: Multiplexer
  • Circuit: 4 x 2:1
  • Independent Circuits: 1
  • Current - Output High, Low: 24mA, 24mA
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOL
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione6.736
TC74HC138APF
Toshiba Semiconductor and Storage

IC DECODER 3-TO-8 LINE 16-DIP

  • Type: Decoder/Demultiplexer
  • Circuit: 1 x 3:8
  • Independent Circuits: 1
  • Current - Output High, Low: 5.2mA, 5.2mA
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 2 V ~ 6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
pacchetto: 16-DIP (0.300", 7.62mm)
Azione13.374
TC7SZ04FE,LJ(CT
Toshiba Semiconductor and Storage

IC INVERTER ESV

  • Logic Type: Inverter
  • Number of Circuits: 1
  • Number of Inputs: 1
  • Features: -
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 32mA, 32mA
  • Logic Level - Low: -
  • Logic Level - High: -
  • Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: ESV
  • Package / Case: SOT-553
pacchetto: SOT-553
Azione5.584
TC7SET08FU,LJ(CT
Toshiba Semiconductor and Storage

IC GATE AND 1CH 2-INP USV

  • Logic Type: AND Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.8V
  • Logic Level - High: 2V
  • Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USV
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
pacchetto: 5-TSSOP, SC-70-5, SOT-353
Azione25.020
TD62064AFG,S,EL
Toshiba Semiconductor and Storage

IC DVR DARL SINK TTL 4CH 16HSOP

  • Type: Driver
  • Protocol: -
  • Number of Drivers/Receivers: 4/0
  • Duplex: -
  • Receiver Hysteresis: -
  • Data Rate: -
  • Voltage - Supply: 5V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
  • Supplier Device Package: 16-HSOP
pacchetto: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Azione4.272
DF5A3.6CJE,LM
Toshiba Semiconductor and Storage

TVS DIODE 1.8VWM ESV PAC

  • Type: Zener
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 1.8V
  • Voltage - Breakdown (Min): 3.4V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 52pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
pacchetto: SOT-553
Azione3.492
TLP3548(F
Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 400MA 400V

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 5 Ohm
  • Load Current: 400mA
  • Voltage - Input: 1.64VDC
  • Voltage - Load: 0 ~ 400 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
  • Relay Type: Relay
pacchetto: 8-DIP (0.300", 7.62mm)
Azione2.844
TLP3123(F)
Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 1A 4-SOP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 100 mOhm
  • Load Current: 1A
  • Voltage - Input: 1.33VDC
  • Voltage - Load: 0 ~ 40 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 4-SOP (0.173", 4.40mm)
  • Supplier Device Package: 4-SOP (2.54mm)
  • Relay Type: Relay
pacchetto: 4-SOP (0.173", 4.40mm)
Azione32.562
4N26(SHORT,F)
Toshiba Semiconductor and Storage

OPTOISO 2.5KV TRANS W/BASE 6DIP

  • Number of Channels: 1
  • Voltage - Isolation: 2500Vrms
  • Current Transfer Ratio (Min): 20% @ 10mA
  • Current Transfer Ratio (Max): -
  • Turn On / Turn Off Time (Typ): -
  • Rise / Fall Time (Typ): 2µs, 200µs
  • Input Type: DC
  • Output Type: Transistor with Base
  • Voltage - Output (Max): 30V
  • Current - Output / Channel: 100mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 80mA
  • Vce Saturation (Max): 500mV
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 6-DIP (0.300", 7.62mm)
  • Supplier Device Package: 6-DIP
pacchetto: 6-DIP (0.300", 7.62mm)
Azione6.228
hot TLP118(TPL,E)
Toshiba Semiconductor and Storage

OPTOISO 3.75KV OPEN COLL SO6-5

  • Number of Channels: 1
  • Inputs - Side 1/Side 2: 1/0
  • Voltage - Isolation: 3750Vrms
  • Common Mode Transient Immunity (Min): 15kV/µs
  • Input Type: DC
  • Output Type: Open Collector
  • Current - Output / Channel: 25mA
  • Data Rate: 20Mbps
  • Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
  • Rise / Fall Time (Typ): 30ns, 30ns
  • Voltage - Forward (Vf) (Typ): 1.61V
  • Current - DC Forward (If) (Max): 25mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
  • Supplier Device Package: 6-SO, 5 Lead
pacchetto: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Azione46.632
hot 74VHC393FT
Toshiba Semiconductor and Storage

IC COUNTER BINARY DUAL 14-TSSOP

  • Logic Type: Binary Counter
  • Direction: Up
  • Number of Elements: 2
  • Number of Bits per Element: 4
  • Reset: Asynchronous
  • Timing: -
  • Count Rate: 115MHz
  • Trigger Type: Negative Edge
  • Voltage - Supply: 2V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 14-TSSOPB
pacchetto: 14-TSSOP (0.173", 4.40mm Width)
Azione3.824
hot 74HC373D
Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC

  • Logic Type: D-Type Latch
  • Circuit: 8:8
  • Output Type: Tri-State
  • Voltage - Supply: 2 V ~ 6 V
  • Independent Circuits: 1
  • Delay Time - Propagation: 30ns
  • Current - Output High, Low: 7.8mA, 7.8mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
pacchetto: 20-SOIC (0.295", 7.50mm Width)
Azione6.272
RN2305-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
pacchetto: -
Azione795
SSM3K347R-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 38V 2A SOT23F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 38 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
pacchetto: -
Azione38.610
RN2709-LF
Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR22KOHM Q1BER47KOH

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
pacchetto: -
Azione9.000
SSM3J36TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 330MA UFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
pacchetto: -
Azione33.828
SSM6L14FE-TE85L-F
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A ES6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
pacchetto: -
Azione52.236