Pagina 15 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Record 1.247
Pagina  15/45
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
R6530ENZC8
Rohm Semiconductor

MOSFET N-CH 650V 30A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
30A (Tc)
10V
4V @ 960µA
90 nC @ 10 V
2100 pF @ 25 V
±20V
-
86W (Tc)
140mOhm @ 14.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6047KNZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 47A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 481W (Tc)
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: -
Azione33
MOSFET (Metal Oxide)
600 V
47A (Tc)
10V
5V @ 1mA
100 nC @ 10 V
4300 pF @ 25 V
±20V
-
481W (Tc)
72mOhm @ 25.8A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
R6004RND3TL1
Rohm Semiconductor

600V 4A TO-252, PRESTOMOS WITH I

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 450µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.73Ohm @ 2A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione9.180
MOSFET (Metal Oxide)
600 V
4A (Tc)
15V
7V @ 450µA
10.5 nC @ 15 V
230 pF @ 100 V
±30V
-
60W (Tc)
1.73Ohm @ 2A, 15V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RD3L07BBGTL1
Rohm Semiconductor

NCH 60V 115A, TO-252, POWER MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 102W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione7.206
MOSFET (Metal Oxide)
60 V
70A (Tc)
4.5V, 10V
2.5V @ 1mA
47 nC @ 10 V
2950 pF @ 30 V
±20V
-
102W (Tc)
3.9mOhm @ 70A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RV8L002SNHZGG2CR
Rohm Semiconductor

MOSFET N-CH 60V 250MA DFN1010-3W

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1010-3W
  • Package / Case: 3-XFDFN
pacchetto: -
Azione19.356
MOSFET (Metal Oxide)
60 V
250mA (Ta)
-
2.3V @ 1mA
-
15 pF @ 25 V
±20V
-
1W (Ta)
2.4Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
DFN1010-3W
3-XFDFN
R6030KNZC17
Rohm Semiconductor

MOSFET N-CH 600V 30A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Azione900
MOSFET (Metal Oxide)
600 V
30A (Tc)
10V
5V @ 1mA
56 nC @ 10 V
2350 pF @ 25 V
±20V
-
86W (Tc)
130mOhm @ 14.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6504ENJTL
Rohm Semiconductor

MOSFET N-CH 650V 4A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione276
MOSFET (Metal Oxide)
650 V
4A (Tc)
10V
4V @ 130µA
15 nC @ 10 V
220 pF @ 25 V
±20V
-
58W (Tc)
1.05Ohm @ 1.5A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCT3022KLHRC11
Rohm Semiconductor

SICFET N-CH 1200V 95A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 427W
  • Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: -
Azione4.020
SiCFET (Silicon Carbide)
1200 V
95A (Tc)
18V
5.6V @ 18.2mA
178 nC @ 18 V
2879 pF @ 800 V
+22V, -4V
-
427W
28.6mOhm @ 36A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
RQ5L020SNTL
Rohm Semiconductor

MOSFET N-CH 60V 2A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione24.720
MOSFET (Metal Oxide)
60 V
2A (Ta)
4V, 10V
2.5V @ 1mA
2.7 nC @ 5 V
180 pF @ 10 V
±20V
-
700mW (Ta)
170mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
R6004JNXC7G
Rohm Semiconductor

MOSFET N-CH 600V 4A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 450µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione2.553
MOSFET (Metal Oxide)
600 V
4A (Tc)
15V
7V @ 450µA
10.5 nC @ 15 V
260 pF @ 100 V
±30V
-
35W (Tc)
1.43Ohm @ 2A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6507ENXC7G
Rohm Semiconductor

650V 7A TO-220FM, LOW-NOISE POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione2.994
MOSFET (Metal Oxide)
650 V
7A (Ta)
10V
4V @ 200µA
20 nC @ 10 V
390 pF @ 25 V
±20V
-
46W (Tc)
665mOhm @ 2.4A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
SCT3022ALHRC11
Rohm Semiconductor

SICFET N-CH 650V 93A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 339W
  • Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: -
Azione6.738
SiCFET (Silicon Carbide)
650 V
93A (Tc)
18V
5.6V @ 18.2mA
133 nC @ 18 V
2208 pF @ 500 V
+22V, -4V
-
339W
28.6mOhm @ 36A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
RF4L055GNTCR
Rohm Semiconductor

MOSFET N-CH 60V 5.5A HUML2020L8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: HUML2020L8
  • Package / Case: 8-PowerUDFN
pacchetto: -
Azione45.528
MOSFET (Metal Oxide)
60 V
5.5A (Ta)
4.5V, 10V
2.7V @ 1mA
7.8 nC @ 10 V
400 pF @ 30 V
±20V
-
2W (Ta)
43mOhm @ 5.5A, 10V
150°C (TJ)
Surface Mount
HUML2020L8
8-PowerUDFN
RSJ250P10FRATL
Rohm Semiconductor

MOSFET P-CH 100V 25A LPTS

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione5.709
MOSFET (Metal Oxide)
100 V
25A (Tc)
4V, 10V
2.5V @ 1mA
60 nC @ 5 V
8000 pF @ 25 V
±20V
-
50W (Tc)
63mOhm @ 25A, 10V
150°C
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RF4L040ATTCR
Rohm Semiconductor

PCH -60V -4A POWER, DFN2020, MOS

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 89mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: HUML2020L8
  • Package / Case: 6-PowerUDFN
pacchetto: -
Azione17.997
MOSFET (Metal Oxide)
60 V
4A (Ta)
4.5V, 10V
2.5V @ 1mA
17.3 nC @ 10 V
850 pF @ 30 V
±20V
-
2W (Ta)
89mOhm @ 4A, 10V
150°C (TJ)
Surface Mount
HUML2020L8
6-PowerUDFN
RD3S075CNTL1
Rohm Semiconductor

MOSFET N-CH 190V 7.5A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 190 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 336mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
190 V
7.5A (Tc)
4V, 10V
2.5V @ 1mA
30 nC @ 10 V
1100 pF @ 25 V
±20V
-
52W (Tc)
336mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT2080KEHRC11
Rohm Semiconductor

SICFET N-CH 1200V 40A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 4.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: -
Azione9.426
SiCFET (Silicon Carbide)
1200 V
40A (Tc)
18V
4V @ 4.4mA
106 nC @ 18 V
2080 pF @ 800 V
+22V, -6V
-
-
117mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
R6520KNX3C16
Rohm Semiconductor

650V 20A, TO-220AB, HIGH-SPEED S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 220W (Tc)
  • Rds On (Max) @ Id, Vgs: 205mOhm @9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Azione2.856
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
5V @ 630µA
40 nC @ 10 V
1550 pF @ 25 V
±20V
-
220W (Tc)
205mOhm @9.5A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
R6524KNJTL
Rohm Semiconductor

MOSFET N-CH 650V 24A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
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MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
5V @ 750µA
45 nC @ 10 V
1850 pF @ 25 V
±20V
-
245W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSM400C12P3G202
Rohm Semiconductor

SICFET N-CH 1200V 400A MODULE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.6V @ 106.8mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 10 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 1570W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: Module
  • Package / Case: Module
pacchetto: -
Azione12
SiCFET (Silicon Carbide)
1200 V
400A (Tc)
-
5.6V @ 106.8mA
-
17000 pF @ 10 V
+22V, -4V
-
1570W (Tc)
-
175°C (TJ)
Chassis Mount
Module
Module
R6006KNXC7G
Rohm Semiconductor

600V 6A TO-220FM, HIGH-SPEED SWI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione2.961
MOSFET (Metal Oxide)
600 V
6A (Ta)
10V
5.5V @ 1mA
12 nC @ 10 V
350 pF @ 25 V
±20V
-
40W (Tc)
830mOhm @ 3A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6035VNX3C16
Rohm Semiconductor

600V 35A TO-220AB, PRESTOMOS WIT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: 6.5V @ 1.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 347W (Tc)
  • Rds On (Max) @ Id, Vgs: 114mOhm @ 8A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Azione2.715
MOSFET (Metal Oxide)
600 V
35A (Tc)
10V, 15V
6.5V @ 1.1mA
50 nC @ 10 V
2400 pF @ 100 V
±30V
-
347W (Tc)
114mOhm @ 8A, 15V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
RRS100P03HZGTB
Rohm Semiconductor

PCH -30V -10A POWER MOSFET. RRS1

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Azione3.705
MOSFET (Metal Oxide)
30 V
10A (Ta)
4.5V, 10V
2.5V @ 1mA
39 nC @ 5 V
3600 pF @ 10 V
±20V
-
2W (Ta)
12.6mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RD3P050SNTL1
Rohm Semiconductor

MOSFET N-CH 100V 5A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione28.377
MOSFET (Metal Oxide)
100 V
5A (Ta)
4V, 10V
2.5V @ 1mA
14 nC @ 10 V
530 pF @ 25 V
±20V
-
15W (Tc)
190mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT3105KRHRC15
Rohm Semiconductor

1200V, 24A, 4-PIN THD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 134W
  • Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
pacchetto: -
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MOSFET (Metal Oxide)
1200 V
24A (Tc)
18V
5.6V @ 3.81mA
51 nC @ 18 V
574 pF @ 800 V
+22V, -4V
-
134W
137mOhm @ 7.6A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
SCT3030ARHRC15
Rohm Semiconductor

650V, 70A, 4-PIN THD, TRENCH-STR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 262W
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
pacchetto: -
Azione1.344
MOSFET (Metal Oxide)
650 V
70A (Tc)
18V
5.6V @ 13.3mA
104 nC @ 18 V
1526 pF @ 500 V
+22V, -4V
-
262W
39mOhm @ 27A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
BSS670AHZGT116
Rohm Semiconductor

NCH 60V 650MA, SOT-23, SMALL SIG

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
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MOSFET (Metal Oxide)
60 V
650mA (Ta)
2.5V, 10V
2V @ 10µA
-
47 pF @ 30 V
±20V
-
200mW (Ta)
680mOhm @ 650mA, 10V
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
RRH090P03GZETB
Rohm Semiconductor

MOSFET P-CH 30V 9A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 650mW (Ta)
  • Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Azione3.327
MOSFET (Metal Oxide)
30 V
9A (Ta)
4V, 10V
2.5V @ 1mA
56 nC @ 10 V
3000 pF @ 10 V
±20V
-
650mW (Ta)
15.4mOhm @ 9A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)