Name: R6530ENZC8
Brand: Rohm Semiconductor
SKU: R6530ENZC8
Availability: InStock
Rating: 5 (193 reviews)

R6530ENZC8

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Numero di parte	R6530ENZC8
Produttore	Rohm Semiconductor
Descrizione	MOSFET N-CH 650V 30A TO3
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	set 23 - set 28 (Scegli una spedizione rapida)
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Specifiche R6530ENZC8

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Corrente - Scarico continuo (Id) @ 25 ° C	30A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 960µA
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	2100 pF @ 25 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	86W (Tc)
Rds On (Max) @ Id, Vgs	140mOhm @ 14.5A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-3PF
Pacchetto / caso	TO-3P-3 Full Pack

R6530ENZC8 Packaging

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6. What is the process for return or replacement of R6530ENZC8?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of R6530ENZC8.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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R6530ENZC8

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