Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Singoli

Record 1.247
Pagina  1/45
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SCT4045DEHRC11
Rohm Semiconductor

750V, 34A, 3-PIN THD, TRENCH-STR

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 115W
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: -
Azione1.218
SiCFET (Silicon Carbide)
750 V
34A (Tc)
18V
4.8V @ 8.89mA
63 nC @ 18 V
1460 pF @ 500 V
+21V, -4V
-
115W
59mOhm @ 17A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
RD3T100CNTL1
Rohm Semiconductor

MOSFET N-CH 200V 10A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.25V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione7.395
MOSFET (Metal Oxide)
200 V
10A (Tc)
10V
5.25V @ 1mA
25 nC @ 10 V
1400 pF @ 25 V
±30V
-
85W (Tc)
182mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RSJ301N10TL
Rohm Semiconductor

NCH 100V 30A POWER MOSFET : RSJ3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263S
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione3.798
MOSFET (Metal Oxide)
100 V
30A (Ta)
4V, 10V
2.5V @ 1mA
60 nC @ 10 V
2100 pF @ 25 V
±20V
-
50W (Ta)
46mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
TO-263S
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6076MNZ1C9
Rohm Semiconductor

MOSFET N-CHANNEL 600V 76A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 740W (Tc)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
76A (Tc)
10V
5V @ 1mA
115 nC @ 10 V
7000 pF @ 25 V
±30V
-
740W (Tc)
55mOhm @ 38A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
SCT4062KWAHRTL
Rohm Semiconductor

1200V, 24A, 7-PIN SMD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 93W
  • Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7LA
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
pacchetto: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
1200 V
24A (Tc)
18V
4.8V @ 6.45mA
64 nC @ 18 V
1498 pF @ 800 V
+21V, -4V
-
93W
81mOhm @ 12A, 18V
175°C (TJ)
Surface Mount
TO-263-7LA
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
R6003KND4TL1
Rohm Semiconductor

600V 1.3A SOT-223-3, HIGH-SPEED

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-3
  • Package / Case: TO-261-3
pacchetto: -
Azione11.964
MOSFET (Metal Oxide)
600 V
1.3A (Tc)
10V
5.5V @ 1mA
8 nC @ 10 V
185 pF @ 25 V
±20V
-
7.8W (Tc)
1.5Ohm @ 1A, 10V
150°C (TJ)
Surface Mount
SOT-223-3
TO-261-3
R6520KNXC7G
Rohm Semiconductor

650V 20A TO-220FM, HIGH-SPEED SW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione2.997
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
5V @ 630µA
40 nC @ 10 V
1550 pF @ 25 V
±20V
-
68W (Tc)
205mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RQ5L030SNTL
Rohm Semiconductor

MOSFET N-CH 60V 3A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione13.707
MOSFET (Metal Oxide)
60 V
3A (Ta)
4V, 10V
2.5V @ 1mA
5 nC @ 5 V
380 pF @ 10 V
±20V
-
700mW (Ta)
85mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
R8006KNXC7G
Rohm Semiconductor

HIGH-SPEED SWITCHING NCH 800V 6A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione2.352
MOSFET (Metal Oxide)
800 V
6A (Ta)
10V
4.5V @ 4mA
22 nC @ 10 V
650 pF @ 100 V
±20V
-
52W (Tc)
900mOhm @ 3A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R8005ANJFRGTL
Rohm Semiconductor

MOSFET N-CH 800V 5A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione5.610
MOSFET (Metal Oxide)
800 V
5A (Tc)
10V
5V @ 1mA
20 nC @ 10 V
500 pF @ 25 V
±30V
-
120W (Tc)
2.1Ohm @ 2.5A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RS1E301GNTB1
Rohm Semiconductor

MOSFET N-CH 30V 30A/80A 8HSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 39.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione7.140
MOSFET (Metal Oxide)
30 V
30A (Ta), 80A (Tc)
4.5V, 10V
2.5V @ 1mA
39.8 nC @ 10 V
2500 pF @ 15 V
±20V
-
3W (Ta)
2.2mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
R6507KNJTL
Rohm Semiconductor

MOSFET N-CH 650V 7A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione240
MOSFET (Metal Oxide)
650 V
7A (Tc)
10V
5V @ 200µA
14.5 nC @ 10 V
470 pF @ 25 V
±20V
-
78W (Tc)
665mOhm @ 2.4A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6012JNXC7G
Rohm Semiconductor

MOSFET N-CH 600V 12A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
12A (Tc)
15V
7V @ 2.5mA
28 nC @ 15 V
900 pF @ 100 V
±30V
-
60W (Tc)
390mOhm @ 6A, 15V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RXH100N03TB1
Rohm Semiconductor

4V DRIVE NCH MOSFET: MOSFETS ARE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Azione7.356
MOSFET (Metal Oxide)
30 V
10A (Ta)
4V, 10V
2.5V @ 1mA
11 nC @ 5 V
800 pF @ 10 V
±20V
-
2W (Ta)
13mOhm @ 10A, 10V
150°C
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
SCT2280KEHRC11
Rohm Semiconductor

1200V, 14A, THD, SILICON-CARBIDE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 1.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 400 V
  • Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 108W (Tc)
  • Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacchetto: -
Azione1.350
SiCFET (Silicon Carbide)
1200 V
14A (Tc)
18V
4V @ 1.4mA
36 nC @ 400 V
667 pF @ 800 V
+22V, -6V
-
108W (Tc)
364mOhm @ 4A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
R6018VNXC7G
Rohm Semiconductor

600V 10A TO-220FM, PRESTOMOS WIT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: 6.5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 61W (Tc)
  • Rds On (Max) @ Id, Vgs: 204mOhm @ 4A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione3.150
MOSFET (Metal Oxide)
600 V
10A (Tc)
10V, 15V
6.5V @ 600µA
27 nC @ 10 V
1250 pF @ 100 V
±30V
-
61W (Tc)
204mOhm @ 4A, 15V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RSR025N05TL
Rohm Semiconductor

NCH 45V 2.5A SMALL SIGNAL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione8.625
MOSFET (Metal Oxide)
45 V
2.5A (Ta)
4V, 10V
3V @ 1mA
3.6 nC @ 5 V
260 pF @ 10 V
±20V
-
700mW (Ta)
100mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RQ7G080ATTCR
Rohm Semiconductor

PCH -40V -8A SMALL SIGNAL POWER

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 18.2mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT8
  • Package / Case: 8-SMD, Flat Lead
pacchetto: -
Azione13.065
MOSFET (Metal Oxide)
40 V
8A (Ta)
4.5V, 10V
2.5V @ 1mA
37 nC @ 10 V
2060 pF @ 20 V
±20V
-
1.1W (Ta)
18.2mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
TSMT8
8-SMD, Flat Lead
RS3L045GNGZETB
Rohm Semiconductor

MOSFET N-CH 60V 4.5A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Azione3.519
MOSFET (Metal Oxide)
60 V
4.5A (Ta)
4.5V, 10V
2.7V @ 50µA
5.6 nC @ 10 V
285 pF @ 30 V
±20V
-
2W (Ta)
59mOhm @ 4.5A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RTR030N05HZGTL
Rohm Semiconductor

MOSFET N-CH 45V 3A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione26.508
MOSFET (Metal Oxide)
45 V
3A (Ta)
2.5V, 4.5V
1.5V @ 1mA
6.2 nC @ 4.5 V
510 pF @ 10 V
±12V
-
700mW (Ta)
67mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RSR025N03HZGTL
Rohm Semiconductor

MOSFET N-CH 30V 2.5A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione8.670
MOSFET (Metal Oxide)
30 V
2.5A (Ta)
4V, 10V
2.5V @ 1mA
4.1 nC @ 5 V
165 pF @ 10 V
±20V
-
700mW (Ta)
70mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
R6035ENZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 35A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 379W (Tc)
  • Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: -
Azione1.740
MOSFET (Metal Oxide)
600 V
35A (Tc)
10V
4V @ 1mA
110 nC @ 10 V
2720 pF @ 25 V
±20V
-
379W (Tc)
102mOhm @ 18.1A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
R6042JNZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 42A TO247G

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 5.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 495W (Tc)
  • Rds On (Max) @ Id, Vgs: 104mOhm @ 21A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
pacchetto: -
Azione288
MOSFET (Metal Oxide)
600 V
42A (Tc)
15V
7V @ 5.5mA
100 nC @ 15 V
3500 pF @ 100 V
±30V
-
495W (Tc)
104mOhm @ 21A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-247G
TO-247-3
RTR040N03HZGTL
Rohm Semiconductor

MOSFET N-CH 30V 4A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione44.058
MOSFET (Metal Oxide)
30 V
4A (Ta)
2.5V, 4.5V
1.5V @ 1mA
8.3 nC @ 4.5 V
475 pF @ 10 V
±12V
-
700mW (Ta)
48mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
R6009KNXC7G
Rohm Semiconductor

600V 9A TO-220FM, HIGH-SPEED SWI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione1.653
MOSFET (Metal Oxide)
600 V
9A (Ta)
10V
5V @ 1mA
16.5 nC @ 10 V
540 pF @ 25 V
±20V
-
48W (Tc)
535mOhm @ 2.8A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RD3P08BBDTL
Rohm Semiconductor

MOSFET N-CH 100V 80A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione28.242
MOSFET (Metal Oxide)
100 V
80A (Tc)
6V, 10V
4V @ 1mA
37 nC @ 10 V
1940 pF @ 50 V
±20V
-
119W (Tc)
11.6mOhm @ 80A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6030MNX
Rohm Semiconductor

MOSFET N-CH 600V 30A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
30A (Tc)
10V
5V @ 1mA
43 nC @ 10 V
2180 pF @ 25 V
±30V
-
90W (Tc)
150mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6009JND3TL1
Rohm Semiconductor

MOSFET N-CH 600V 9A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 1.38mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione7.380
MOSFET (Metal Oxide)
600 V
9A (Tc)
15V
7V @ 1.38mA
22 nC @ 15 V
645 pF @ 100 V
±30V
-
125W (Tc)
585mOhm @ 4.5A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63