Name: RD3P08BBDTL
Brand: Rohm Semiconductor
SKU: RD3P08BBDTL
Availability: InStock
Rating: 5 (152 reviews)

RD3P08BBDTL

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Numero di parte	RD3P08BBDTL
Produttore	Rohm Semiconductor
Descrizione	MOSFET N-CH 100V 80A TO252
Scheda dati
pacchetto	-
ECAD
A magazzino	28.242 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 30 - gen 4 (Scegli una spedizione rapida)
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Specifiche RD3P08BBDTL

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Corrente - Scarico continuo (Id) @ 25 ° C	80A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	6V, 10V
Vgs (th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	1940 pF @ 50 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	119W (Tc)
Rds On (Max) @ Id, Vgs	11.6mOhm @ 80A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-252
Pacchetto / caso	TO-252-3, DPAK (2 Leads + Tab), SC-63

RD3P08BBDTL Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RD3P08BBDTL.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
7.How to contact us to get technical supports, such as RD3P08BBDTL pin diagram, RD3P08BBDTL datasheet?

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RD3P08BBDTL

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