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Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Array

Record 313
Pagina  8/12
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
UT6MA3TCR
Rohm Semiconductor

20V NCH+PCH MIDDLE POWER MOSFET

  • FET Type: N and P-Channel
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: HUML2020L8
pacchetto: 6-UDFN Exposed Pad
Azione5.184
-
20V
5A, 5.5A
59 mOhm @ 5A, 4.5V
1.5V @ 1mA
6.5nC @ 4.5V
460pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
HUML2020L8
QH8KA4TCR
Rohm Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: 8-SMD, Flat Lead
Azione7.888
-
30V
9A
17 mOhm @ 7A, 4.5V
1.5V @ 1mA
12nC @ 4.5V
1400pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
hot SP8K2TB
Rohm Semiconductor

MOSFET 2N-CH 30V 6A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione1.159.248
Logic Level Gate
30V
6A
30 mOhm @ 6A, 10V
2.5V @ 1mA
10.1nC @ 5V
520pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
QH8MA4TCR
Rohm Semiconductor

MOSFET N/P-CH 30V TSMT8

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 8A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: 8-SMD, Flat Lead
Azione2.112
Standard
30V
9A, 8A
16 mOhm @ 9A, 10V
2.5V @ 1mA
15.5nC @ 10V
640pF @ 15V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
QS8J13TR
Rohm Semiconductor

MOSFET 2P-CH 12V 5.5A TSMT8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 6V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: 8-SMD, Flat Lead
Azione6.416
Logic Level Gate
12V
5.5A
22 mOhm @ 5.5A, 4.5V
1V @ 1mA
60nC @ 4.5V
6300pF @ 6V
1.25W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
UT6JA2TCR
Rohm Semiconductor

-30V PCH+PCH MIDDLE POWER MOSFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: HUML2020L8
pacchetto: 6-UDFN Exposed Pad
Azione2.000
-
30V
4A
70 mOhm @ 4A, 10V
2.5V @ 1mA
6.7nC @ 10V
305pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
HUML2020L8
SH8M4TB1
Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 7A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione27.000
Logic Level Gate
30V
9A, 7A
18 mOhm @ 9A, 10V
2.5V @ 1mA
15nC @ 5V
1190pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot US6K2TR
Rohm Semiconductor

MOSFET 2N-CH 30V 1.4A TUMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: TUMT6
pacchetto: 6-SMD, Flat Leads
Azione432.000
Logic Level Gate
30V
1.4A
240 mOhm @ 1.4A, 10V
2.5V @ 1mA
2nC @ 5V
70pF @ 10V
1W
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
TUMT6
QH8MA3TCR
Rohm Semiconductor

MOSFET N/P-CH 30V TSMT8

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: 8-SMD, Flat Lead
Azione6.192
Standard
30V
7A, 5.5A
29 mOhm @ 7A, 10V
2.5V @ 1mA
7.2nC @ 10V
300pF @ 15V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
US6K4TR
Rohm Semiconductor

MOSFET 2N-CH 20V 1.5A TUMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: TUMT6
pacchetto: 6-SMD, Flat Leads
Azione4.064
Logic Level Gate
20V
1.5A
180 mOhm @ 1.5A, 4.5V
1V @ 1mA
2.5nC @ 4.5V
110pF @ 10V
1W
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
TUMT6
hot US6K1TR
Rohm Semiconductor

MOSFET 2N-CH 30V 1.5A TUMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: TUMT6
pacchetto: 6-SMD, Flat Leads
Azione828.000
Logic Level Gate
30V
1.5A
240 mOhm @ 1.5A, 4.5V
1.5V @ 1mA
2.2nC @ 4.5V
80pF @ 10V
1W
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
TUMT6
QH8KA2TCR
Rohm Semiconductor

30V NCH+NCH POWER MOSFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
  • Power - Max: 2.4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: 8-SMD, Flat Lead
Azione7.264
-
30V
4.5A
73 mOhm @ 4.5A, 10V
2.5V @ 1mA
3nC @ 10V
125pf @ 15V
2.4W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
US6M11TR
Rohm Semiconductor

MOSFET N/P-CH 20V/12V TUMT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V, 12V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione5.200
Logic Level Gate
20V, 12V
1.5A, 1.3A
180 mOhm @ 1.5A, 4.5V
1V @ 1mA
1.8nC @ 4.5V
110pF @ 10V
1W
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
hot US6J11TR
Rohm Semiconductor

MOSFET 2P-CH 12V 1.3A TUMT6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
  • Power - Max: 320mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione36.000
Logic Level Gate
12V
1.3A
260 mOhm @ 1.3A, 4.5V
1V @ 1mA
2.4nC @ 4.5V
290pF @ 6V
320mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
hot QS6M3TR
Rohm Semiconductor

MOSFET N/P-CH 30V/20V 1.5A TSMT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione541.212
Logic Level Gate
30V, 20V
1.5A
230 mOhm @ 1.5A, 4.5V
1.5V @ 1mA
1.6nC @ 4.5V
80pF @ 10V
1.25W
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
QH8MA2TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 4.5A/3A TSMT8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: 8-SMD, Flat Lead
Azione7.248
Logic Level Gate
30V
4.5A, 3A
35 mOhm @ 4.5A, 10V
2.5V @ 1mA
8.4nC @ 10V
365pF @ 10V
1.25W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
TT8K11TCR
Rohm Semiconductor

MOSFET 2N-CH 30V 3A TSST8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 71 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1A
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
pacchetto: 8-SMD, Flat Lead
Azione5.616
Logic Level Gate, 4V Drive
30V
3A
71 mOhm @ 3A, 10V
2.5V @ 1A
2.5nC @ 5V
140pF @ 10V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
hot SM6K2T110
Rohm Semiconductor

MOSFET 2N-CH 60V 0.2A SOT-457

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SMT6
pacchetto: SC-74, SOT-457
Azione331.920
Logic Level Gate
60V
200mA
2.4 Ohm @ 200mA, 10V
2.5V @ 1mA
4.4nC @ 10V
15pF @ 10V
300mW
150°C (TJ)
Surface Mount
SC-74, SOT-457
SMT6
hot EM6K31GT2R
Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A EMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
  • Power - Max: 120mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
pacchetto: SOT-563, SOT-666
Azione22.560
Logic Level Gate, 2.5V Drive
60V
250mA
2.4 Ohm @ 250mA, 10V
2.3V @ 1mA
-
15pF @ 25V
120mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
hot EM6J1T2R
Rohm Semiconductor

MOSFET 2P-CH 20V 0.2A EMT6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
pacchetto: SOT-563, SOT-666
Azione517.212
Logic Level Gate
20V
200mA
1.2 Ohm @ 200mA, 4.5V
1V @ 100µA
1.4nC @ 4.5V
115pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
hot SP8K3TB
Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione1.031.220
Logic Level Gate
30V
7A
24 mOhm @ 7A, 10V
2.5V @ 1mA
11.8nC @ 5V
600pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
TT8J13TCR
Rohm Semiconductor

MOSFET 2P-CH 12V 2.5A TSST8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 6V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
pacchetto: 8-SMD, Flat Lead
Azione4.672
Logic Level Gate, 1.5V Drive
12V
2.5A
62 mOhm @ 2.5A, 4.5V
1V @ 1mA
16nC @ 4.5V
2000pF @ 6V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
QH8KA1TCR
Rohm Semiconductor

30V NCH+NCH POWER MOSFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
  • Power - Max: 2.4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: 8-SMD, Flat Lead
Azione2.688
-
30V
4.5A
73 mOhm @ 4.5A, 10V
2.5V @ 1mA
3nC @ 10V
125pf @ 15V
2.4W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
hot EM6K7T2R
Rohm Semiconductor

MOSFET 2N-CH 20V 0.2A EMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
pacchetto: SOT-563, SOT-666
Azione511.500
Logic Level Gate
20V
200mA
1.2 Ohm @ 200mA, 2.5V
1V @ 1mA
-
25pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
TT8M3TR
Rohm Semiconductor

MOSFET N/P-CH 20V 2.5A TSST8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
pacchetto: 8-SMD, Flat Lead
Azione3.424
Logic Level Gate, 1.5V Drive
20V
2.5A, 2.4A
72 mOhm @ 2.5A, 4.5V
1V @ 1mA
3.6nC @ 4.5V
260pF @ 10V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
QS8J11TCR
Rohm Semiconductor

MOSFET 2P-CH 12V 3.5A TSMT8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V
  • Power - Max: 550mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: 8-SMD, Flat Lead
Azione3.776
Logic Level Gate, 1.5V Drive
12V
3.5A
43 mOhm @ 3.5A, 4.5V
1V @ 1mA
22nC @ 4.5V
2600pF @ 6V
550mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
VT6J1T2CR
Rohm Semiconductor

MOSFET 2P-CH 20V 0.1A VMT6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • Power - Max: 120mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: VMT6
pacchetto: 6-SMD, Flat Leads
Azione2.944
Logic Level Gate, 1.2V Drive
20V
100mA
3.8 Ohm @ 100mA, 4.5V
1V @ 100µA
-
15pF @ 10V
120mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
VMT6
hot EM6K31T2R
Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A EMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
pacchetto: SOT-563, SOT-666
Azione60.000
Logic Level Gate
60V
250mA
2.4 Ohm @ 250mA, 10V
2.3V @ 1mA
-
15pF @ 25V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6