Pagina 7 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Array

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EM6K6T2R	Rohm Semiconductor	MOSFET 2N-CH 20V 0.3A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	pacchetto: SOT-563, SOT-666	Azione2.415.960	Logic Level Gate	20V	300mA	1 Ohm @ 300mA, 4V	1V @ 1mA	-	25pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
TT8J11TCR	Rohm Semiconductor	MOSFET 2P-CH 12V 3.5A TSST8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V Power - Max: 650mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	pacchetto: 8-SMD, Flat Lead	Azione86.508	Logic Level Gate, 1.5V Drive	12V	3.5A	43 mOhm @ 3.5A, 4.5V	1V @ 1mA	22nC @ 4.5V	2600pF @ 6V	650mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
EM6K1T2R	Rohm Semiconductor	MOSFET 2N-CH 30V .1A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	pacchetto: SOT-563, SOT-666	Azione16.080	Logic Level Gate	30V	100mA	8 Ohm @ 10mA, 4V	1.5V @ 100µA	-	13pF @ 5V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
UM6K34NTCN	Rohm Semiconductor	MOSFET 2N-CH 50V 0.2A UMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 0.9V Drive Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V Power - Max: 120mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione9.108	Logic Level Gate, 0.9V Drive	50V	200mA	2.2 Ohm @ 200mA, 4.5V	800mV @ 1mA	-	26pF @ 10V	120mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
UM6K33NTN	Rohm Semiconductor	MOSFET 2N-CH 50V 0.2A UMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 120mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione5.504	Logic Level Gate, 1.2V Drive	50V	200mA	2.2 Ohm @ 200mA, 4.5V	1V @ 1mA	-	25pF @ 10V	120mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
VT6M1T2CR	Rohm Semiconductor	MOSFET N/P-CH 20V 0.1A VMT6 FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V Power - Max: 120mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: VMT6	pacchetto: 6-SMD, Flat Leads	Azione63.720	Logic Level Gate, 1.2V Drive	20V	100mA	3.5 Ohm @ 100mA, 4.5V	1V @ 100µA	-	7.1pF @ 10V	120mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	VMT6
VT6K1T2CR	Rohm Semiconductor	MOSFET 2N-CH 20V 0.1A VMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V Power - Max: 120mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: VMT6	pacchetto: 6-SMD, Flat Leads	Azione69.324	Logic Level Gate, 1.2V Drive	20V	100mA	3.5 Ohm @ 100mA, 4.5V	1V @ 100µA	-	7.1pF @ 10V	120mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	VMT6
HP8K22TB	Rohm Semiconductor	30V NCH+NCH MID POWER MOSFET FET Type: 2 N-Channel (Half Bridge) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A, 57A Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V Power - Max: 25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	pacchetto: 8-PowerTDFN	Azione21.840	-	30V	27A, 57A	4.6 mOhm @ 20A, 10V	2.5V @ 1mA	16.8nC @ 10V	1080pF @ 15V	25W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
SH8KA2GZETB	Rohm Semiconductor	30V NCH+NCH MIDDLE POWER MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 28 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V Power - Max: 2.8W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione23.598	-	30V	8A	28 mOhm @ 8A, 10V	2.5V @ 1mA	8nC @ 10V	330pF @ 15V	2.8W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SH8KA4TB	Rohm Semiconductor	30V NCH+NCH MIDDLE POWER MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 21.4 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Power - Max: 3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione26.928	-	30V	9A	21.4 mOhm @ 9A, 10V	2.5V @ 1mA	15.5nC @ 10V	640pF @ 15V	3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
QH8JA1TCR	Rohm Semiconductor	20V PCH+PCH MIDDLE POWER MOSFET, FET Type: 2 P-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	pacchetto: 8-SMD, Flat Lead	Azione23.028	-	30V	5A	38 mOhm @ 5A, 4.5V	1.2V @ 1mA	10.2nC @ 4.5V	720pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
UT6J3TCR	Rohm Semiconductor	-20V PCH+PCH POWER MOSFET FET Type: 2 P-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 85 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: HUML2020L8	pacchetto: 6-UDFN Exposed Pad	Azione24.978	-	20V	3A	85 mOhm @ 3A, 4.5V	1V @ 1mA	8.5nC @ 4.5V	2000pF @ 10V	2W	150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	HUML2020L8
QS8K11TCR	Rohm Semiconductor	4V DRIVE NCH+NCH MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	pacchetto: 8-SMD, Flat Lead	Azione21.924	-	30V	3.5A	50 mOhm @ 3.5A, 10V	2.5V @ 1mA	3.3nC @ 5V	180pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
TT8J3TR	Rohm Semiconductor	4V DRIVE PCH+PCH MOSFET FET Type: 2 P-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 84 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	pacchetto: 8-SMD, Flat Lead	Azione22.722	-	30V	2.5A	84 mOhm @ 2.5A, 10V	2.5V @ 1mA	4.8nC @ 5V	460pF @ 15V	1.25W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
SH8M3TB1	Rohm Semiconductor	MOSFET N/P-CH 30V 5A/4.5A SOP8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione23.880	Logic Level Gate	30V	5A, 4.5A	51 mOhm @ 5A, 10V	2.5V @ 1mA	3.9nC @ 5V	230pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
TT8K2TR	Rohm Semiconductor	MOSFET 2N-CH 30V 2.5A TSST8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	pacchetto: 8-SMD, Flat Lead	Azione23.250	Logic Level Gate	30V	2.5A	90 mOhm @ 2.5A, 4.5V	1.5V @ 1mA	3.2nC @ 4.5V	180pF @ 10V	1.25W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
US6J2TR	Rohm Semiconductor	MOSFET 2P-CH 20V 1A TUMT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	pacchetto: 6-SMD, Flat Leads	Azione144.000	Logic Level Gate	20V	1A	390 mOhm @ 1A, 4.5V	2V @ 1mA	2.1nC @ 4.5V	150pF @ 10V	1W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	TUMT6
QS6J1TR	Rohm Semiconductor	MOSFET 2P-CH 20V 1.5A TSMT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 215 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSMT6 (SC-95)	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione972.012	Logic Level Gate	20V	1.5A	215 mOhm @ 1.5A, 4.5V	2V @ 1mA	3nC @ 4.5V	270pF @ 10V	1.25W	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSMT6 (SC-95)
EM6M1T2R	Rohm Semiconductor	MOSFET N/P-CH 30V/20V EMT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	pacchetto: SOT-563, SOT-666	Azione384.000	Logic Level Gate	30V, 20V	100mA, 200mA	8 Ohm @ 10mA, 4V	-	0.9nC @ 4.5V	13pF @ 5V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
EM5K5T2R	Rohm Semiconductor	MOSFET 2N-CH 30V 0.3A EMT5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 600 mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 150mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: EMT5	pacchetto: 6-SMD (5 Leads), Flat Lead	Azione94.290	Standard	30V	300mA	600 mOhm @ 300mA, 4.5V	-	-	-	150mW	-	Surface Mount	6-SMD (5 Leads), Flat Lead	EMT5
BSM180D12P2C101	Rohm Semiconductor	MOSFET 2N-CH 1200V 180A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 35.2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V Power - Max: 1130W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: Module Supplier Device Package: Module	pacchetto: Module	Azione6.512	Standard	1200V (1.2kV)	180A	-	4V @ 35.2mA	-	23000pF @ 10V	1130W	-40°C ~ 150°C (TJ)	-	Module	Module
SH8M24TB1	Rohm Semiconductor	MOSFET N/P-CH 45V 4.5A/3.5A SOP8 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione44.544	Standard	45V	4.5A, 3.5A	46 mOhm @ 4.5A, 10V	2.5V @ 1mA	9.6nC @ 5V	550pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
QS8M13TCR	Rohm Semiconductor	MOSFET N/P-CH 30V 6A/5A TSMT8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	pacchetto: 8-SMD, Flat Lead	Azione17.676	Logic Level Gate	30V	6A, 5A	28 mOhm @ 6A, 10V	2.5V @ 1mA	5.5nC @ 5V	390pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
QS8J4TR	Rohm Semiconductor	MOSFET 2P-CH 30V 4A TSMT8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 56 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Power - Max: 550mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	pacchetto: 8-SMD, Flat Lead	Azione49.608	Logic Level Gate	30V	4A	56 mOhm @ 4A, 10V	2.5V @ 1mA	13nC @ 10V	800pF @ 10V	550mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
SH8K5TB1	Rohm Semiconductor	MOSFET 2N-CH 30V 3.5A SOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione13.368	Logic Level Gate	30V	3.5A	83 mOhm @ 3.5A, 10V	2.5V @ 1mA	3.5nC @ 5V	140pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
US6M1TR	Rohm Semiconductor	MOSFET N/P-CH 30V/20V TUMT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	pacchetto: 6-SMD, Flat Leads	Azione321.156	Logic Level Gate	30V, 20V	1.4A, 1A	240 mOhm @ 1.4A, 10V	2.5V @ 1mA	2nC @ 5V	70pF @ 10V	1W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	TUMT6
HS8K11TB	Rohm Semiconductor	MOSFET 2N-CH 30V 7A/11A HSML FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 11A Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: HSML3030L10	pacchetto: 8-UDFN Exposed Pad	Azione29.604	Logic Level Gate	30V	7A, 11A	17.9 mOhm @ 7A, 10V	2.5V @ 1mA	11.1nC @ 10V	500pF @ 15V	2W	150°C (TJ)	Surface Mount	8-UDFN Exposed Pad	HSML3030L10
UM6J1NTN	Rohm Semiconductor	MOSFET 2P-CH 30V 0.2A UMT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione108.012	Logic Level Gate	30V	200mA	1.4 Ohm @ 200mA, 10V	2.5V @ 1mA	-	30pF @ 10V	150mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6

EM6K6T2R

Rohm Semiconductor

MOSFET 2N-CH 20V 0.3A EMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

pacchetto: SOT-563, SOT-666

Azione2.415.960

Logic Level Gate

20V

300mA

1 Ohm @ 300mA, 4V

1V @ 1mA

-

25pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

TT8J11TCR

Rohm Semiconductor

MOSFET 2P-CH 12V 3.5A TSST8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V
Power - Max: 650mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

pacchetto: 8-SMD, Flat Lead

Azione86.508

Logic Level Gate, 1.5V Drive

12V

3.5A

43 mOhm @ 3.5A, 4.5V

1V @ 1mA

22nC @ 4.5V

2600pF @ 6V

650mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

EM6K1T2R

Rohm Semiconductor

MOSFET 2N-CH 30V .1A EMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

pacchetto: SOT-563, SOT-666

Azione16.080

Logic Level Gate

30V

100mA

8 Ohm @ 10mA, 4V

1.5V @ 100µA

-

13pF @ 5V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

UM6K34NTCN

Rohm Semiconductor

MOSFET 2N-CH 50V 0.2A UMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 0.9V Drive
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
Power - Max: 120mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione9.108

Logic Level Gate, 0.9V Drive

50V

200mA

2.2 Ohm @ 200mA, 4.5V

800mV @ 1mA

-

26pF @ 10V

120mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

UM6K33NTN

Rohm Semiconductor

MOSFET 2N-CH 50V 0.2A UMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Power - Max: 120mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione5.504

Logic Level Gate, 1.2V Drive

50V

200mA

2.2 Ohm @ 200mA, 4.5V

1V @ 1mA

-

25pF @ 10V

120mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

VT6M1T2CR

Rohm Semiconductor

MOSFET N/P-CH 20V 0.1A VMT6

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
Power - Max: 120mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: VMT6

pacchetto: 6-SMD, Flat Leads

Azione63.720

Logic Level Gate, 1.2V Drive

20V

100mA

3.5 Ohm @ 100mA, 4.5V

1V @ 100µA

-

7.1pF @ 10V

120mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

VMT6

VT6K1T2CR

Rohm Semiconductor

MOSFET 2N-CH 20V 0.1A VMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
Power - Max: 120mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: VMT6

pacchetto: 6-SMD, Flat Leads

Azione69.324

Logic Level Gate, 1.2V Drive

20V

100mA

3.5 Ohm @ 100mA, 4.5V

1V @ 100µA

-

7.1pF @ 10V

120mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

VMT6

HP8K22TB

Rohm Semiconductor

30V NCH+NCH MID POWER MOSFET

FET Type: 2 N-Channel (Half Bridge)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A, 57A
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Power - Max: 25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

pacchetto: 8-PowerTDFN

Azione21.840

-

30V

27A, 57A

4.6 mOhm @ 20A, 10V

2.5V @ 1mA

16.8nC @ 10V

1080pF @ 15V

25W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

SH8KA2GZETB

Rohm Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Power - Max: 2.8W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione23.598

-

30V

8A

28 mOhm @ 8A, 10V

2.5V @ 1mA

8nC @ 10V

330pF @ 15V

2.8W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SH8KA4TB

Rohm Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 21.4 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione26.928

-

30V

9A

21.4 mOhm @ 9A, 10V

2.5V @ 1mA

15.5nC @ 10V

640pF @ 15V

3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

QH8JA1TCR

Rohm Semiconductor

20V PCH+PCH MIDDLE POWER MOSFET,

FET Type: 2 P-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

pacchetto: 8-SMD, Flat Lead

Azione23.028

-

30V

5A

38 mOhm @ 5A, 4.5V

1.2V @ 1mA

10.2nC @ 4.5V

720pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

UT6J3TCR

Rohm Semiconductor

-20V PCH+PCH POWER MOSFET

FET Type: 2 P-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: HUML2020L8

pacchetto: 6-UDFN Exposed Pad

Azione24.978

-

20V

3A

85 mOhm @ 3A, 4.5V

1V @ 1mA

8.5nC @ 4.5V

2000pF @ 10V

2W

150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

HUML2020L8

QS8K11TCR

Rohm Semiconductor

4V DRIVE NCH+NCH MOSFET

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

pacchetto: 8-SMD, Flat Lead

Azione21.924

-

30V

3.5A

50 mOhm @ 3.5A, 10V

2.5V @ 1mA

3.3nC @ 5V

180pF @ 10V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

TT8J3TR

Rohm Semiconductor

4V DRIVE PCH+PCH MOSFET

FET Type: 2 P-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 84 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

pacchetto: 8-SMD, Flat Lead

Azione22.722

-

30V

2.5A

84 mOhm @ 2.5A, 10V

2.5V @ 1mA

4.8nC @ 5V

460pF @ 15V

1.25W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

SH8M3TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A SOP8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione23.880

Logic Level Gate

30V

5A, 4.5A

51 mOhm @ 5A, 10V

2.5V @ 1mA

3.9nC @ 5V

230pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

TT8K2TR

Rohm Semiconductor

MOSFET 2N-CH 30V 2.5A TSST8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

pacchetto: 8-SMD, Flat Lead

Azione23.250

Logic Level Gate

30V

2.5A

90 mOhm @ 2.5A, 4.5V

1.5V @ 1mA

3.2nC @ 4.5V

180pF @ 10V

1.25W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

US6J2TR

Rohm Semiconductor

MOSFET 2P-CH 20V 1A TUMT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6

pacchetto: 6-SMD, Flat Leads

Azione144.000

Logic Level Gate

20V

1A

390 mOhm @ 1A, 4.5V

2V @ 1mA

2.1nC @ 4.5V

150pF @ 10V

1W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

TUMT6

QS6J1TR

Rohm Semiconductor

MOSFET 2P-CH 20V 1.5A TSMT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 215 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSMT6 (SC-95)

pacchetto: SOT-23-6 Thin, TSOT-23-6

Azione972.012

Logic Level Gate

20V

1.5A

215 mOhm @ 1.5A, 4.5V

2V @ 1mA

3nC @ 4.5V

270pF @ 10V

1.25W

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSMT6 (SC-95)

EM6M1T2R

Rohm Semiconductor

MOSFET N/P-CH 30V/20V EMT6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

pacchetto: SOT-563, SOT-666

Azione384.000

Logic Level Gate

30V, 20V

100mA, 200mA

8 Ohm @ 10mA, 4V

-

0.9nC @ 4.5V

13pF @ 5V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

EM5K5T2R

Rohm Semiconductor

MOSFET 2N-CH 30V 0.3A EMT5

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 600 mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 150mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: EMT5

pacchetto: 6-SMD (5 Leads), Flat Lead

Azione94.290

Standard

30V

300mA

600 mOhm @ 300mA, 4.5V

-

150mW

-

Surface Mount

6-SMD (5 Leads), Flat Lead

EMT5

BSM180D12P2C101

Rohm Semiconductor

MOSFET 2N-CH 1200V 180A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V
Power - Max: 1130W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: Module
Supplier Device Package: Module

pacchetto: Module

Azione6.512

Standard

1200V (1.2kV)

180A

-

4V @ 35.2mA

-

23000pF @ 10V

1130W

-40°C ~ 150°C (TJ)

-

Module

SH8M24TB1

Rohm Semiconductor

MOSFET N/P-CH 45V 4.5A/3.5A SOP8

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione44.544

Standard

45V

4.5A, 3.5A

46 mOhm @ 4.5A, 10V

2.5V @ 1mA

9.6nC @ 5V

550pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

QS8M13TCR

Rohm Semiconductor

MOSFET N/P-CH 30V 6A/5A TSMT8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

pacchetto: 8-SMD, Flat Lead

Azione17.676

Logic Level Gate

30V

6A, 5A

28 mOhm @ 6A, 10V

2.5V @ 1mA

5.5nC @ 5V

390pF @ 10V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

QS8J4TR

Rohm Semiconductor

MOSFET 2P-CH 30V 4A TSMT8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 56 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Power - Max: 550mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

pacchetto: 8-SMD, Flat Lead

Azione49.608

Logic Level Gate

30V

4A

56 mOhm @ 4A, 10V

2.5V @ 1mA

13nC @ 10V

800pF @ 10V

550mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

SH8K5TB1

Rohm Semiconductor

MOSFET 2N-CH 30V 3.5A SOP8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione13.368

Logic Level Gate

30V

3.5A

83 mOhm @ 3.5A, 10V

2.5V @ 1mA

3.5nC @ 5V

140pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

US6M1TR

Rohm Semiconductor

MOSFET N/P-CH 30V/20V TUMT6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6

pacchetto: 6-SMD, Flat Leads

Azione321.156

Logic Level Gate

30V, 20V

1.4A, 1A

240 mOhm @ 1.4A, 10V

2.5V @ 1mA

2nC @ 5V

70pF @ 10V

1W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

TUMT6

HS8K11TB

Rohm Semiconductor

MOSFET 2N-CH 30V 7A/11A HSML

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 11A
Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: HSML3030L10

pacchetto: 8-UDFN Exposed Pad

Azione29.604

Logic Level Gate

30V

7A, 11A

17.9 mOhm @ 7A, 10V

2.5V @ 1mA

11.1nC @ 10V

500pF @ 15V

2W

150°C (TJ)

Surface Mount

8-UDFN Exposed Pad

HSML3030L10

UM6J1NTN

Rohm Semiconductor

MOSFET 2P-CH 30V 0.2A UMT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione108.012

Logic Level Gate

30V

200mA

1.4 Ohm @ 200mA, 10V

2.5V @ 1mA

-

30pF @ 10V

150mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6