Prodotti Renesas Electronics America - Transistor - FET, MOSFET - Array

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
RJM0603JSC-00#12	Renesas Electronics America	MOSFET 3N/3P-CH 60V 20A HSOP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V Power - Max: 54W Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Supplier Device Package: 20-HSOP	pacchetto: 20-SOIC (0.433", 11.00mm Width) Exposed Pad	Azione6.400	Logic Level Gate, 4.5V Drive	60V	20A	20 mOhm @ 10A, 10V	2.5V @ 1mA	43nC @ 10V	2600pF @ 10V	54W	175°C	Surface Mount	20-SOIC (0.433", 11.00mm Width) Exposed Pad	20-HSOP
RJM0603JSC-00#13	Renesas Electronics America	MOSFET 3N/3P-CH 60V 20A HSOP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V Power - Max: 54W Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Supplier Device Package: 20-HSOP	pacchetto: 20-SOIC (0.433", 11.00mm Width) Exposed Pad	Azione5.280	Logic Level Gate, 4.5V Drive	60V	20A	20 mOhm @ 10A, 10V	2.5V @ 1mA	43nC @ 10V	2600pF @ 10V	54W	175°C	Surface Mount	20-SOIC (0.433", 11.00mm Width) Exposed Pad	20-HSOP
UPA2385T1P-E1-A	Renesas Electronics America	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione3.328	-	-	-	-	-	-	-	-	-	-	-	-
UPA2373T1P-E4-A	Renesas Electronics America	MOSFET 2N-CH 24V FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA Supplier Device Package: 4-EFLIP-LGA (1.62x1.62)	pacchetto: 4-XFBGA	Azione6.368	Logic Level Gate, 2.5V Drive	-	-	-	-	22nC @ 4V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	4-XFBGA	4-EFLIP-LGA (1.62x1.62)
UPA1764G-E2-AZ	Renesas Electronics America	MOSFET 2N-CH 60V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 35 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.173", 4.40mm Width)	Azione2.224	Standard	60V	7A	35 mOhm @ 3.5A, 10V	-	29nC @ 10V	1300pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
RJM0306JSP-01#J0	Renesas Electronics America	MOSFET 2N/2P-CH 30V 3.5A 8-SOP FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 65 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power - Max: 2.2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione4.192	Logic Level Gate, 4V Drive	30V	3.5A	65 mOhm @ 2A, 10V	-	5nC @ 10V	290pF @ 10V	2.2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
UPA2672T1R-E2-AX	Renesas Electronics America	MOSFET 2P-CH 12V 4A 6HUSON FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 67 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V Power - Max: 2.3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)	pacchetto: 6-WFDFN Exposed Pad	Azione7.648	Logic Level Gate, 1.8V Drive	12V	4A	67 mOhm @ 2A, 4.5V	-	5nC @ 4.5V	486pF @ 10V	2.3W	150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-HUSON (2x2)
UPA2670T1R-E2-AX	Renesas Electronics America	MOSFET 2P-CH 20V 3A 6HUSON FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 79 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 473pF @ 10V Power - Max: 2.3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)	pacchetto: 6-WFDFN Exposed Pad	Azione5.232	Logic Level Gate, 1.8V Drive	20V	3A	79 mOhm @ 1.5A, 4.5V	-	5.1nC @ 4.5V	473pF @ 10V	2.3W	150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-HUSON (2x2)
HAT2092R-EL-E	Renesas Electronics America	MOSFET 2N-CH 30V 11A 8-SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 16 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione4.367.508	Logic Level Gate	30V	11A	16 mOhm @ 5.5A, 10V	2.5V @ 1mA	22nC @ 10V	1400pF @ 10V	3W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
HAT2038R-EL-E	Renesas Electronics America	MOSFET 2N-CH 60V 5A 8SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 58 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione18.768	Logic Level Gate	60V	5A	58 mOhm @ 3A, 10V	2.2V @ 1mA	-	520pF @ 10V	3W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
UPA3753GR-E1-AT	Renesas Electronics America	MOSFET 2N-CH 60V 5A 8SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 56 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Power - Max: 1.12W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-SOP	pacchetto: 8-PowerWDFN	Azione393.648	Logic Level Gate	60V	5A	56 mOhm @ 2.5A, 10V	-	13.4nC @ 10V	640pF @ 10V	1.12W	150°C (TJ)	Surface Mount	8-PowerWDFN	8-SOP
UPA2690T1R-E2-AX	Renesas Electronics America	MOSFET N/P-CH 20V 4A/3A 6SON FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Rds On (Max) @ Id, Vgs: 42 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V Power - Max: 2.3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)	pacchetto: 6-WFDFN Exposed Pad	Azione2.800	Logic Level Gate, 2.5V Drive	20V	4A, 3A	42 mOhm @ 2A, 4.5V	-	4.5nC @ 10V	330pF @ 10V	2.3W	150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-HUSON (2x2)
UPA2660T1R-E2-AX	Renesas Electronics America	MOSFET 2N-CH 20V 4A 6SON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 62 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V Power - Max: 2.3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)	pacchetto: 6-WFDFN Exposed Pad	Azione6.928	Logic Level Gate, 2.5V Drive	20V	4A	62 mOhm @ 2A, 4.5V	-	4.5nC @ 10V	330pF @ 10V	2.3W	150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-HUSON (2x2)
UPA2375T1P-E1-A	Renesas Electronics America	MOSFET 2N-CH 24V FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.75W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFLGA Supplier Device Package: 6-EFLIP-LGA	pacchetto: 6-XFLGA	Azione3.632	Logic Level Gate, 2.5V Drive	-	-	-	-	-	-	1.75W	150°C (TJ)	Surface Mount	6-XFLGA	6-EFLIP-LGA
UPA2379T1P-E1-A	Renesas Electronics America	MOSFET 2N-CH 12V FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.8W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFLGA Supplier Device Package: 6-EFLIP-LGA (2.17x1.47)	pacchetto: 6-XFLGA	Azione45.894	Logic Level Gate, 2.5V Drive	-	-	-	-	20nC @ 4V	-	1.8W	150°C (TJ)	Surface Mount	6-XFLGA	6-EFLIP-LGA (2.17x1.47)