Pagina 2 - Prodotti NXP - Transistor - JFET

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
J3A080YXS/T0BY4AG0	NXP	TRANSISTOR JFET 8PLLCC FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione5.216	-	-	-	-	-	-	-	-	-	-	-	-
J3A040YXS/T0BY4571	NXP	TRANSISTOR JFET 8PLLCC FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione7.520	-	-	-	-	-	-	-	-	-	-	-	-
J3A012YXS/T0BY4551	NXP	TRANSISTOR JFET 8PLLCC FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione3.504	-	-	-	-	-	-	-	-	-	-	-	-
J2A080GX0/T0BG295,	NXP	TRANSISTOR JFET 8PLLCC FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione6.400	-	-	-	-	-	-	-	-	-	-	-	-
J2A040YXS/T0BY424,	NXP	TRANSISTOR JFET 8PLLCC FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione2.592	-	-	-	-	-	-	-	-	-	-	-	-
J2A020YXS/T0BY425,	NXP	TRANSISTOR JFET 8PLLCC FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione4.976	-	-	-	-	-	-	-	-	-	-	-	-
J2A012YXS/T1AY403,	NXP	TRANSISTOR JFET 8PLLCC FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione5.776	-	-	-	-	-	-	-	-	-	-	-	-
J1A012YXS/T1AY404,	NXP	TRANSISTOR JFET 8PLLCC FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione4.320	-	-	-	-	-	-	-	-	-	-	-	-
PMBFJ113,215	NXP	JFET N-CH 40V 0.3W SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS) Resistance - RDS(On): 100 Ohm Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione3.680	40V	40V	2mA @ 15V	-	3V @ 1µA	6pF @ 10V (VGS)	100 Ohm	300mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (TO-236AB)
J110,126	NXP	JFET N-CH 25V 0.4W SOT54 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 5V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Resistance - RDS(On): 18 Ohm Power - Max: 400mW Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione3.440	25V	25V	10mA @ 5V	-	4V @ 1µA	30pF @ 0V	18 Ohm	400mW	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
J108,126	NXP	JFET N-CH 25V 0.4W SOT54 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 5V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Resistance - RDS(On): 8 Ohm Power - Max: 400mW Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione6.080	25V	25V	80mA @ 5V	-	10V @ 1µA	30pF @ 0V	8 Ohm	400mW	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
J176,126	NXP	JFET P-CH 30V 400MW TO92-3 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS) Resistance - RDS(On): 250 Ohm Power - Max: 400mW Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione2.608	30V	30V	2mA @ 15V	-	1V @ 10nA	8pF @ 10V (VGS)	250 Ohm	400mW	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92
J174,126	NXP	JFET P-CH 30V 400MW TO92-3 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS) Resistance - RDS(On): 85 Ohm Power - Max: 400mW Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione4.576	30V	30V	20mA @ 15V	-	5V @ 10nA	8pF @ 10V (VGS)	85 Ohm	400mW	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92
J109,126	NXP	JFET N-CH 25V 0.4W SOT54 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS) Resistance - RDS(On): 12 Ohm Power - Max: 400mW Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione7.872	25V	25V	80mA @ 15V	-	2V @ 1µA	30pF @ 10V (VGS)	12 Ohm	400mW	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PMBFJ174,215	NXP	JFET P-CH 30V 0.3W SOT23 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS) Resistance - RDS(On): 85 Ohm Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione4.368	30V	30V	20mA @ 15V	-	5V @ 10nA	8pF @ 10V (VGS)	85 Ohm	300mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (TO-236AB)