Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS Integrated Circuits Division |
14A 8 PIN DIP INVERTING
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione23.748 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
IXYS Integrated Circuits Division |
IC GATE DVR HALF 600V 14SOIC
|
pacchetto: 14-SOIC (0.154", 3.90mm Width) |
Azione5.040 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2V | 1.4A, 1.8A | Non-Inverting | 600V | 23ns, 14ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
||
IXYS Integrated Circuits Division |
IC MOSFET/IGBT DVR 600V 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione7.888 |
|
Single | 1 | IGBT, N-Channel MOSFET | 9 V ~ 12 V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 23ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC HIGH SIDE DRIVER 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.096 |
|
Single | 1 | IGBT, N-Channel MOSFET | 9 V ~ 12 V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 23ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC HIGH SIDE DRIVER 8DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione4.944 |
|
Single | 1 | IGBT, N-Channel MOSFET | 9 V ~ 12 V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 23ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
IXYS Integrated Circuits Division |
2A 8 SOIC EXP METAL DUAL INVERT
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione3.216 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
2A 8SOIC EXP MTL DUAL IN/NON-INV
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione3.600 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
2A 8SOIC EXP MTL DUAL NON INVERT
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione4.496 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
2A 8 SOIC EXP METAL DUAL INVERT
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione5.200 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
2A 8SOIC EXP MTL DUAL IN/NON-INV
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione5.936 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione23.760 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione68.640 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione39.012 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.080 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione21.372 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione20.004 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.624 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione6.288 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione48.408 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8DFN
|
pacchetto: 8-VDFN Exposed Pad |
Azione3.584 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione6.576 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.160 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.000 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
3A DUAL NON-INVERTING LOW SIDE G
|
pacchetto: - |
Azione4.768 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS Integrated Circuits Division |
IC MOSFET DRIVER 3A SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione7.872 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 3A, 3A | Inverting, Non-Inverting | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
3 AMP, DUAL, ONE INVERTING AND O
|
pacchetto: - |
Azione2.624 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS Integrated Circuits Division |
3 AMP, DUAL NON-INVERTING, LOW-S
|
pacchetto: - |
Azione5.648 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS Integrated Circuits Division |
3 AMP, DUAL INVERTING, LOW-SIDE
|
pacchetto: - |
Azione6.800 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |