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Prodotti IXYS Integrated Circuits Division - PMIC - Gate driver

Record 147
Pagina  2/6
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IXDD609D2TR
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV 8DFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP (5x4)
pacchetto: 8-VDFN Exposed Pad
Azione6.208
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN-EP (5x4)
IX2120B
IXYS Integrated Circuits Division

1200V HIGH AND LOW SIDE GATE DRI

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 15 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 1200V
  • Rise / Fall Time (Typ): 9.4ns, 9.7ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
pacchetto: 28-SOIC (0.295", 7.50mm Width)
Azione7.696
Independent
2
IGBT, N-Channel MOSFET
15 V ~ 20 V
6V, 9.5V
2A, 2A
Non-Inverting
1200V
9.4ns, 9.7ns
-40°C ~ 150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
IX4340NE
IXYS Integrated Circuits Division

5-AMP DUAL LOW-SIDE MOSFET DRIVE

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7ns, 7ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione17.904
Independent
2
N-Channel, P-Channel MOSFET
5 V ~ 20 V
0.8V, 2.5V
5A, 5A
Non-Inverting
-
7ns, 7ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC
IX21844N
IXYS Integrated Circuits Division

IC GATE DVR HALF 600V 14SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 1.4A, 1.8A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 23ns, 14ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
pacchetto: 14-SOIC (0.154", 3.90mm Width)
Azione19.152
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2V
1.4A, 1.8A
Non-Inverting
600V
23ns, 14ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
IXDI609YI
IXYS Integrated Circuits Division

IC GATE DVR 9A DUAL HS TO263-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
pacchetto: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Azione16.512
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
hot IXDD609CI
IXYS Integrated Circuits Division

IC GATE DVR 9A DUAL HS TO220-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
pacchetto: TO-220-5
Azione10.176
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
hot IXDF604SI
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL IN/NON 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione42.504
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Inverting, Non-Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot IXDD614PI
IXYS Integrated Circuits Division

MOSFET DVR ULT FAST 14A 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione4.752
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
hot IXDF604SIA
IXYS Integrated Circuits Division

IC GATE DVR 4A DIFF 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione104.760
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Inverting, Non-Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IXDD604PI
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL ENABLE 8DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione9.948
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Non-Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
hot IXDI604SIA
IXYS Integrated Circuits Division

IC GATE DVR 4A INV 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione94.896
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IXDD604SIA
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL ENABLE 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione14.676
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Non-Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IXDD609PI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione15.636
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
hot IXDF602SIA
IXYS Integrated Circuits Division

MOSFET N-CH 2A DUAL LO SIDE 8-SO

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7.5ns, 6.5ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione87.648
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
2A, 2A
Inverting, Non-Inverting
-
7.5ns, 6.5ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IX4426N
IXYS Integrated Circuits Division

IC MOSFET DRIVER 1.5A 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione29.334
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 30 V
0.8V, 2.4V
1.5A, 1.5A
Inverting
-
10ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IX4428MTR
IXYS Integrated Circuits Division

IC MOSFET DVR INV/NON 1.5A 8-DFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (3x3)
pacchetto: 8-VDFN Exposed Pad
Azione18.336
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 30 V
0.8V, 2.4V
1.5A, 1.5A
Inverting, Non-Inverting
-
10ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (3x3)
IX4427NTR
IXYS Integrated Circuits Division

IC MOSFET DRIVER 1.5A 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione23.262
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 30 V
0.8V, 2.4V
1.5A, 1.5A
Non-Inverting
-
10ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IXDD630YI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO263

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 12.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
pacchetto: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Azione17.232
Single
1
IGBT, N-Channel, P-Channel MOSFET
12.5 V ~ 35 V
0.8V, 3.5V
30A, 30A
Non-Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
IXDN630YI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO263

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 12.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
pacchetto: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Azione14.772
Single
1
IGBT, N-Channel, P-Channel MOSFET
12.5 V ~ 35 V
0.8V, 3.5V
30A, 30A
Non-Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
IXDN630CI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO220

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 12.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
pacchetto: TO-220-5
Azione23.808
Single
1
IGBT, N-Channel, P-Channel MOSFET
12.5 V ~ 35 V
0.8V, 3.5V
30A, 30A
Non-Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
IXDD630MYI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE TO-263-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 9 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
pacchetto: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Azione20.616
Single
1
IGBT, N-Channel, P-Channel MOSFET
9 V ~ 35 V
0.8V, 3.5V
30A, 30A
Non-Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
IXDD614CI
IXYS Integrated Circuits Division

MOSFET N-CH 14A LO SIDE TO-220-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
pacchetto: TO-220-5
Azione18.744
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
hot IXDN604SI
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL NONINV 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione45.276
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Non-Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot IXDD604SI
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL ENABLE 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione19.848
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Non-Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot IXDI604SI
IXYS Integrated Circuits Division

IC GATE DVR 4A INV 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione9.060
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDD609SI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione22.020
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot IXDN609SI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione37.320
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot IXDN604SIA
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL NONINV 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione62.292
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Non-Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC