Pagina 3 - Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli

BSS127IXTSA1

Infineon Technologies

SMALL SIGNAL MOSFETS PG-SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: -

Azione20.598

MOSFET (Metal Oxide)

600 V

21mA (Ta)

4.5V, 10V

2.6V @ 8µA

0.65 nC @ 10 V

21 pF @ 25 V

±20V

-

500mW (Ta)

500Ohm @ 16mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT-23-3

TO-236-3, SC-59, SOT-23-3

94-2312PBF

Infineon Technologies

IC MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IPB015N04NGATMA1

Infineon Technologies

MOSFET N-CH 40V 120A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Azione6.495

MOSFET (Metal Oxide)

40 V

120A (Tc)

10V

4V @ 200µA

250 nC @ 10 V

20000 pF @ 20 V

±20V

-

250W (Tc)

1.5mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IRLB3036PBFXKMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacchetto: -

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MOSFET (Metal Oxide)

60 V

195A (Tc)

4.5V, 10V

2.5V @ 250µA

140 nC @ 4.5 V

11210 pF @ 50 V

±16V

-

380W (Tc)

2.4mOhm @ 165A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IMZ120R220M1HXKSA1

Infineon Technologies

SICFET N-CH 1.2KV 13A TO247-4

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
Vgs (Max): +23V, -7V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-1
Package / Case: TO-247-4

pacchetto: -

Azione1.053

SiCFET (Silicon Carbide)

1200 V

13A (Tc)

15V, 18V

5.7V @ 1.6mA

8.5 nC @ 18 V

289 pF @ 800 V

+23V, -7V

-

75W (Tc)

220mOhm @ 4A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-1

TO-247-4

IPL60R225CFD7AUMA1

Infineon Technologies

MOSFET N-CH 600V 12A VSON-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.9A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4-1
Package / Case: 4-PowerTSFN

pacchetto: -

Azione9.000

MOSFET (Metal Oxide)

600 V

12A (Tc)

10V

4.5V @ 240µA

23 nC @ 10 V

1015 pF @ 400 V

±20V

-

68W (Tc)

225mOhm @ 4.9A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4-1

4-PowerTSFN

AUIRLR2703TRL

Infineon Technologies

MOSFET N-CH 30V 20A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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MOSFET (Metal Oxide)

30 V

20A (Tc)

-

1V @ 250µA

15 nC @ 4.5 V

450 pF @ 25 V

-

45W (Tc)

45mOhm @ 14A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252AA (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPB65R190C7ATMA2

Infineon Technologies

MOSFET N-CH 650V 13A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 72W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Azione1.890

MOSFET (Metal Oxide)

650 V

13A (Tc)

10V

4V @ 290µA

23 nC @ 10 V

1150 pF @ 400 V

±20V

-

72W (Tc)

190mOhm @ 5.7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPD95R450P7ATMA1

Infineon Technologies

MOSFET N-CH 950V 14A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 950 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

Azione6.282

MOSFET (Metal Oxide)

950 V

14A (Tc)

10V

3.5V @ 360µA

35 nC @ 10 V

1053 pF @ 400 V

±20V

-

104W (Tc)

450mOhm @ 7.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPB030N08N3GATMA1

Infineon Technologies

MOSFET N-CH 80V 160A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

pacchetto: -

Azione8.244

MOSFET (Metal Oxide)

80 V

160A (Tc)

6V, 10V

3.5V @ 155µA

117 nC @ 10 V

8110 pF @ 40 V

±20V

-

214W (Tc)

3mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7

TO-263-7, D2PAK (6 Leads + Tab)

IGT60R070D1ATMA4

Infineon Technologies

GANFET N-CH

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Package / Case: 8-PowerSFN

pacchetto: -

Azione8.799

GaNFET (Gallium Nitride)

600 V

31A (Tc)

-

1.6V @ 2.6mA

-

380 pF @ 400 V

-10V

-

125W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8-3

8-PowerSFN

IGT60R070D1ATMA1

Infineon Technologies

GANFET N-CH 600V 31A 8HSOF

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Package / Case: 8-PowerSFN

pacchetto: -

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GaNFET (Gallium Nitride)

600 V

31A (Tc)

-

1.6V @ 2.6mA

-

380 pF @ 400 V

-10V

-

125W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8-3

8-PowerSFN

IPD390P06NMSAUMA1

Infineon Technologies

MOSFET P-CH 60V TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

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MOSFET (Metal Oxide)

60 V

-

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPTG044N15NM5ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 235µA
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOG-8
Package / Case: 8-PowerSMD, Gull Wing

pacchetto: -

Azione1.842

MOSFET (Metal Oxide)

150 V

19.4A (Ta), 174A (Tc)

8V, 10V

4.6V @ 235µA

89 nC @ 10 V

7000 pF @ 75 V

±20V

-

3.8W (Ta), 300W (Tc)

4.4mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOG-8

8-PowerSMD, Gull Wing

SPP18P06PHXKSA1

Infineon Technologies

MOSFET P-CH 60V 18.7A TO220-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 81.1W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

pacchetto: -

Azione1.821

MOSFET (Metal Oxide)

60 V

18.7A (Ta)

10V

4V @ 1mA

28 nC @ 10 V

860 pF @ 25 V

±20V

-

81.1W (Ta)

130mOhm @ 13.2A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IMBG65R107M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET PG-TO263-

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

pacchetto: -

Azione2.955

SiCFET (Silicon Carbide)

650 V

24A (Tc)

18V

5.7V @ 2.6mA

15 nC @ 18 V

496 pF @ 400 V

+23V, -5V

-

110W (Tc)

141mOhm @ 8.9A, 18V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-12

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IAUCN04S7L005ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-43
Package / Case: 8-PowerTDFN

pacchetto: -

Azione3.000

MOSFET (Metal Oxide)

40 V

430A (Tj)

4.5V, 10V

1.8V @ 95µA

141 nC @ 10 V

9415 pF @ 20 V

±16V

-

179W (Tc)

0.52mOhm @ 88A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-43

8-PowerTDFN

IMBG65R039M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET PG-TO263-

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

pacchetto: -

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SiCFET (Silicon Carbide)

650 V

54A (Tc)

18V

5.7V @ 7.5mA

41 nC @ 18 V

1393 pF @ 400 V

+23V, -5V

-

211W (Tc)

51mOhm @ 25A, 18V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-12

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IMW65R057M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET, PG-TO247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Vgs (Max): +20V, -2V
FET Feature: -
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
Package / Case: TO-247-3

pacchetto: -

Azione306

SiCFET (Silicon Carbide)

650 V

35A (Tc)

18V

5.7V @ 5mA

28 nC @ 18 V

930 pF @ 400 V

+20V, -2V

-

133W (Tc)

74mOhm @ 16.7A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-3-41

TO-247-3

BSC220N20NSFDATMA1

Infineon Technologies

MOSFET N-CH 200V 52A TSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 137µA
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-3
Package / Case: 8-PowerTDFN

pacchetto: -

Azione34.863

MOSFET (Metal Oxide)

200 V

52A (Tc)

10V

4V @ 137µA

43 nC @ 10 V

3680 pF @ 100 V

±20V

-

214W (Tc)

22mOhm @ 52A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSON-8-3

8-PowerTDFN

IMT65R022M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

pacchetto: -

Azione5.883

SiCFET (Silicon Carbide)

650 V

-

18V

-

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IPBE65R230CFD7AATMA1

Infineon Technologies

MOSFET N-CH 650V 11A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3-10
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

pacchetto: -

Azione7.263

MOSFET (Metal Oxide)

650 V

11A (Tc)

10V

4.5V @ 260µA

23 nC @ 10 V

1044 pF @ 400 V

±20V

-

63W (Tc)

230mOhm @ 5.2A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO263-7-3-10

TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

IPT60T065S7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Request a Quote

-

IMW120R045M1XKSA1

Infineon Technologies

SICFET N-CH 1.2KV 52A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V
Vgs (Max): +20V, -10V
FET Feature: -
Power Dissipation (Max): 228W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
Package / Case: TO-247-3

pacchetto: -

Azione174

SiCFET (Silicon Carbide)

1200 V

52A (Tc)

15V

5.7V @ 10mA

52 nC @ 15 V

1900 pF @ 800 V

+20V, -10V

-

228W (Tc)

59mOhm @ 20A, 15V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-3-41

TO-247-3

IPT60R090CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 28A 8HSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

pacchetto: -

Azione5.880

MOSFET (Metal Oxide)

600 V

28A (Tc)

10V

4.5V @ 470µA

42 nC @ 10 V

1752 pF @ 400 V

±20V

-

160W (Tc)

90mOhm @ 9.3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IPP330P10NMAKSA1

Infineon Technologies

TRENCH >=100V PG-TO220-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

pacchetto: -

Azione1.314

MOSFET (Metal Oxide)

100 V

6.9A (Ta), 62A (Tc)

10V

4V @ 5.55mA

236 nC @ 10 V

11000 pF @ 50 V

±20V

-

3.8W (Ta), 300W (Tc)

33mOhm @ 53A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IRF7455TRPBF-1

Infineon Technologies

MOSFET N-CH 30V 15A 8SO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 25 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: -

Request a Quote

MOSFET (Metal Oxide)

30 V

15A (Ta)

2.8V, 10V

2V @ 250µA

56 nC @ 5 V

3480 pF @ 25 V

±12V

-

2.5W (Ta)

7.5mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

BSC012N06NSATMA1

Infineon Technologies

MOSFET N-CH 60V 100A TSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 306A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-3
Package / Case: 8-PowerTDFN

pacchetto: -

Azione15.000

MOSFET (Metal Oxide)

60 V

36A (Ta), 306A (Tc)

6V, 10V

3.3V @ 147µA

143 nC @ 10 V

11000 pF @ 30 V

±20V

-

214W (Tc)

1.2mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSON-8-3

8-PowerTDFN

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS127IXTSA1	Infineon Technologies	SMALL SIGNAL MOSFETS PG-SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	pacchetto: -	Azione20.598	MOSFET (Metal Oxide)	600 V	21mA (Ta)	4.5V, 10V	2.6V @ 8µA	0.65 nC @ 10 V	21 pF @ 25 V	±20V	-	500mW (Ta)	500Ohm @ 16mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT-23-3	TO-236-3, SC-59, SOT-23-3
94-2312PBF	Infineon Technologies	IC MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB015N04NGATMA1	Infineon Technologies	MOSFET N-CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Azione6.495	MOSFET (Metal Oxide)	40 V	120A (Tc)	10V	4V @ 200µA	250 nC @ 10 V	20000 pF @ 20 V	±20V	-	250W (Tc)	1.5mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRLB3036PBFXKMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	60 V	195A (Tc)	4.5V, 10V	2.5V @ 250µA	140 nC @ 4.5 V	11210 pF @ 50 V	±16V	-	380W (Tc)	2.4mOhm @ 165A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IMZ120R220M1HXKSA1	Infineon Technologies	SICFET N-CH 1.2KV 13A TO247-4 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.7V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V Vgs (Max): +23V, -7V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-1 Package / Case: TO-247-4	pacchetto: -	Azione1.053	SiCFET (Silicon Carbide)	1200 V	13A (Tc)	15V, 18V	5.7V @ 1.6mA	8.5 nC @ 18 V	289 pF @ 800 V	+23V, -7V	-	75W (Tc)	220mOhm @ 4A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-1	TO-247-4
IPL60R225CFD7AUMA1	Infineon Technologies	MOSFET N-CH 600V 12A VSON-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 4.9A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4-1 Package / Case: 4-PowerTSFN	pacchetto: -	Azione9.000	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	4.5V @ 240µA	23 nC @ 10 V	1015 pF @ 400 V	±20V	-	68W (Tc)	225mOhm @ 4.9A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4-1	4-PowerTSFN
AUIRLR2703TRL	Infineon Technologies	MOSFET N-CH 30V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	30 V	20A (Tc)	-	1V @ 250µA	15 nC @ 4.5 V	450 pF @ 25 V	-	-	45W (Tc)	45mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB65R190C7ATMA2	Infineon Technologies	MOSFET N-CH 650V 13A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 290µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Azione1.890	MOSFET (Metal Oxide)	650 V	13A (Tc)	10V	4V @ 290µA	23 nC @ 10 V	1150 pF @ 400 V	±20V	-	72W (Tc)	190mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPD95R450P7ATMA1	Infineon Technologies	MOSFET N-CH 950V 14A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 360µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Azione6.282	MOSFET (Metal Oxide)	950 V	14A (Tc)	10V	3.5V @ 360µA	35 nC @ 10 V	1053 pF @ 400 V	±20V	-	104W (Tc)	450mOhm @ 7.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB030N08N3GATMA1	Infineon Technologies	MOSFET N-CH 80V 160A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	pacchetto: -	Azione8.244	MOSFET (Metal Oxide)	80 V	160A (Tc)	6V, 10V	3.5V @ 155µA	117 nC @ 10 V	8110 pF @ 40 V	±20V	-	214W (Tc)	3mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2PAK (6 Leads + Tab)
IGT60R070D1ATMA4	Infineon Technologies	GANFET N-CH FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	pacchetto: -	Azione8.799	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-3	8-PowerSFN
IGT60R070D1ATMA1	Infineon Technologies	GANFET N-CH 600V 31A 8HSOF FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	pacchetto: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-3	8-PowerSFN
IPD390P06NMSAUMA1	Infineon Technologies	MOSFET P-CH 60V TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	60 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPTG044N15NM5ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 235µA Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8 Package / Case: 8-PowerSMD, Gull Wing	pacchetto: -	Azione1.842	MOSFET (Metal Oxide)	150 V	19.4A (Ta), 174A (Tc)	8V, 10V	4.6V @ 235µA	89 nC @ 10 V	7000 pF @ 75 V	±20V	-	3.8W (Ta), 300W (Tc)	4.4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOG-8	8-PowerSMD, Gull Wing
SPP18P06PHXKSA1	Infineon Technologies	MOSFET P-CH 60V 18.7A TO220-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 81.1W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	pacchetto: -	Azione1.821	MOSFET (Metal Oxide)	60 V	18.7A (Ta)	10V	4V @ 1mA	28 nC @ 10 V	860 pF @ 25 V	±20V	-	81.1W (Ta)	130mOhm @ 13.2A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IMBG65R107M1HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET PG-TO263- FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	pacchetto: -	Azione2.955	SiCFET (Silicon Carbide)	650 V	24A (Tc)	18V	5.7V @ 2.6mA	15 nC @ 18 V	496 pF @ 400 V	+23V, -5V	-	110W (Tc)	141mOhm @ 8.9A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IAUCN04S7L005ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 430A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-43 Package / Case: 8-PowerTDFN	pacchetto: -	Azione3.000	MOSFET (Metal Oxide)	40 V	430A (Tj)	4.5V, 10V	1.8V @ 95µA	141 nC @ 10 V	9415 pF @ 20 V	±16V	-	179W (Tc)	0.52mOhm @ 88A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-43	8-PowerTDFN
IMBG65R039M1HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET PG-TO263- FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	pacchetto: -	Request a Quote	SiCFET (Silicon Carbide)	650 V	54A (Tc)	18V	5.7V @ 7.5mA	41 nC @ 18 V	1393 pF @ 400 V	+23V, -5V	-	211W (Tc)	51mOhm @ 25A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMW65R057M1HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET, PG-TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V Vgs (Max): +20V, -2V FET Feature: - Power Dissipation (Max): 133W (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	pacchetto: -	Azione306	SiCFET (Silicon Carbide)	650 V	35A (Tc)	18V	5.7V @ 5mA	28 nC @ 18 V	930 pF @ 400 V	+20V, -2V	-	133W (Tc)	74mOhm @ 16.7A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
BSC220N20NSFDATMA1	Infineon Technologies	MOSFET N-CH 200V 52A TSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 137µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-3 Package / Case: 8-PowerTDFN	pacchetto: -	Azione34.863	MOSFET (Metal Oxide)	200 V	52A (Tc)	10V	4V @ 137µA	43 nC @ 10 V	3680 pF @ 100 V	±20V	-	214W (Tc)	22mOhm @ 52A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-3	8-PowerTDFN
IMT65R022M1HXUMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	pacchetto: -	Azione5.883	SiCFET (Silicon Carbide)	650 V	-	18V	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IPBE65R230CFD7AATMA1	Infineon Technologies	MOSFET N-CH 650V 11A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3-10 Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	pacchetto: -	Azione7.263	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	4.5V @ 260µA	23 nC @ 10 V	1044 pF @ 400 V	±20V	-	63W (Tc)	230mOhm @ 5.2A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-7-3-10	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
IPT60T065S7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IMW120R045M1XKSA1	Infineon Technologies	SICFET N-CH 1.2KV 52A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 5.7V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V Vgs (Max): +20V, -10V FET Feature: - Power Dissipation (Max): 228W (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	pacchetto: -	Azione174	SiCFET (Silicon Carbide)	1200 V	52A (Tc)	15V	5.7V @ 10mA	52 nC @ 15 V	1900 pF @ 800 V	+20V, -10V	-	228W (Tc)	59mOhm @ 20A, 15V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
IPT60R090CFD7XTMA1	Infineon Technologies	MOSFET N-CH 600V 28A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 470µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 9.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	pacchetto: -	Azione5.880	MOSFET (Metal Oxide)	600 V	28A (Tc)	10V	4.5V @ 470µA	42 nC @ 10 V	1752 pF @ 400 V	±20V	-	160W (Tc)	90mOhm @ 9.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IPP330P10NMAKSA1	Infineon Technologies	TRENCH >=100V PG-TO220-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 5.55mA Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	pacchetto: -	Azione1.314	MOSFET (Metal Oxide)	100 V	6.9A (Ta), 62A (Tc)	10V	4V @ 5.55mA	236 nC @ 10 V	11000 pF @ 50 V	±20V	-	3.8W (Ta), 300W (Tc)	33mOhm @ 53A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IRF7455TRPBF-1	Infineon Technologies	MOSFET N-CH 30V 15A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 25 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	30 V	15A (Ta)	2.8V, 10V	2V @ 250µA	56 nC @ 5 V	3480 pF @ 25 V	±12V	-	2.5W (Ta)	7.5mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
BSC012N06NSATMA1	Infineon Technologies	MOSFET N-CH 60V 100A TSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 306A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 147µA Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-3 Package / Case: 8-PowerTDFN	pacchetto: -	Azione15.000	MOSFET (Metal Oxide)	60 V	36A (Ta), 306A (Tc)	6V, 10V	3.3V @ 147µA	143 nC @ 10 V	11000 pF @ 30 V	±20V	-	214W (Tc)	1.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-3	8-PowerTDFN