Pagina 2 - Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli

Record 8.381
Pagina  2/300
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPLK70R2K0P7ATMA1
Infineon Technologies

MOSFET N-CH 700V TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
700 V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-TDSON-8
8-PowerTDFN
IPB100N10S305ATMA2
Infineon Technologies

MOSFET_(75V 120V(

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
100 V
100A (Tc)
10V
4V @ 240µA
176 nC @ 10 V
11570 pF @ 25 V
±20V
-
300W (Tc)
5.1mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB65R660CFDATMA1
Infineon Technologies

MOSFET N-CH 650V 6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
6A (Tc)
10V
4.5V @ 200µA
22 nC @ 10 V
615 pF @ 100 V
±20V
-
62.5W (Tc)
660mOhm @ 2.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC050N03LSGATMA1
Infineon Technologies

MOSFET N-CH 30V 18A/80A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-5
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione37.764
MOSFET (Metal Oxide)
30 V
18A (Ta), 80A (Tc)
4.5V, 10V
2.2V @ 250µA
35 nC @ 10 V
2800 pF @ 15 V
±20V
-
2.5W (Ta), 50W (Tc)
5mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
IPTC012N06NM5ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 311A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 143µA
  • Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-16-U01
  • Package / Case: 16-PowerSOP Module
pacchetto: -
Azione5.370
MOSFET (Metal Oxide)
60 V
41A (Ta), 311A (Tc)
6V, 10V
3.3V @ 143µA
133 nC @ 10 V
10000 pF @ 30 V
±20V
-
3.8W (Ta), 214W (Tc)
1.2mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HDSOP-16-U01
16-PowerSOP Module
SPU01N60C3BKMA1
Infineon Technologies

MOSFET N-CH 650V 800MA TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 11W (Tc)
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3-21
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
800mA (Tc)
10V
3.9V @ 250µA
5 nC @ 10 V
100 pF @ 25 V
±20V
-
11W (Tc)
6Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3-21
TO-251-3 Short Leads, IPak, TO-251AA
IPI60R250CP
Infineon Technologies

COOLMOS N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 520µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
12A (Tc)
10V
3.5V @ 520µA
35 nC @ 10 V
1200 pF @ 100 V
±20V
-
104W (Tc)
250mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO262
TO-262-3 Long Leads, I2PAK, TO-262AA
IRLMS6802TR
Infineon Technologies

MOSFET P-CH 20V 5.6A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6™(SOT23-6)
  • Package / Case: SOT-23-6
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
20 V
5.6A (Ta)
-
1.2V @ 250µA
16 nC @ 5 V
1079 pF @ 10 V
-
-
-
50mOhm @ 5.1A, 4.5V
-
Surface Mount
Micro6™(SOT23-6)
SOT-23-6
IPA037N08N3GXKSA1
Infineon Technologies

MOSFET N-CH 80V 75A TO220-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 155µA
  • Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione1.008
MOSFET (Metal Oxide)
80 V
75A (Tc)
6V, 10V
3.5V @ 155µA
117 nC @ 10 V
8110 pF @ 40 V
±20V
-
41W (Tc)
3.7mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IMZ120R350M1HXKSA1
Infineon Technologies

SICFET N-CH 1.2KV 4.7A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
  • Vgs (Max): +23V, -7V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-1
  • Package / Case: TO-247-4
pacchetto: -
Azione759
SiCFET (Silicon Carbide)
1200 V
4.7A (Tc)
15V, 18V
5.7V @ 1mA
5.3 nC @ 18 V
182 pF @ 800 V
+23V, -7V
-
60W (Tc)
350mOhm @ 2A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
IRFB260NPBFAKMA1
Infineon Technologies

PLANAR 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4220 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
200 V
56A (Tc)
10V
4V @ 250µA
220 nC @ 10 V
4220 pF @ 25 V
±20V
-
380W (Tc)
40mOhm @ 34A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPB60R380C6ATMA1
Infineon Technologies

MOSFET N-CH 600V 10.6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
10.6A (Tc)
10V
3.5V @ 320µA
32 nC @ 10 V
700 pF @ 100 V
±20V
-
83W (Tc)
380mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFP3077PBFXKMA1
Infineon Technologies

MOSFET N-CH 75V 90A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 340W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
75 V
120A (Tc)
10V
4V @ 250µA
220 nC @ 10 V
9400 pF @ 50 V
±20V
-
340W (Tc)
3.3mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
IQD009N06NM5ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 163µA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSON-8-U04
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione14.964
MOSFET (Metal Oxide)
60 V
42A (Ta), 445A (Tc)
6V, 10V
3.3V @ 163µA
150 nC @ 10 V
12000 pF @ 30 V
±20V
-
3W (Ta), 333W (Tc)
0.9mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSON-8-U04
8-PowerTDFN
SPB18P06PGATMA1
Infineon Technologies

MOSFET P-CH 60V 18.7A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 81.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione3.468
MOSFET (Metal Oxide)
60 V
18.7A (Ta)
10V
4V @ 1mA
28 nC @ 10 V
860 pF @ 25 V
±20V
-
81.1W (Ta)
130mOhm @ 13.2A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IMBG65R007M2HXTMA1
Infineon Technologies

SICFET N-CH 650V 238A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
  • Vgs(th) (Max) @ Id: 5.6V @ 2.97mA
  • Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
  • Vgs (Max): +23V, -7V
  • FET Feature: -
  • Power Dissipation (Max): 789W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-12
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
pacchetto: -
Azione1.485
SiCFET (Silicon Carbide)
650 V
238A (Tc)
15V, 20V
5.6V @ 2.97mA
179 nC @ 18 V
6359 pF @ 400 V
+23V, -7V
-
789W (Tc)
8.5mOhm @ 146.3A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IQDH29NE2LM5CGATMA1
Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1.448mA
  • Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TTFN-9-U02
  • Package / Case: 9-PowerTDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
25 V
75A (Ta), 789A (Tc)
4.5V, 10V
2V @ 1.448mA
254 nC @ 10 V
17000 pF @ 12 V
±16V
-
2.5W (Ta), 278W (Tc)
0.29mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TTFN-9-U02
9-PowerTDFN
IPP013N04NF2SAKMA1
Infineon Technologies

TRENCH PG-TO220-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Azione3.000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPP041N04NGHKSA1
Infineon Technologies

MOSFET N-CH 40V 80A TO220-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
80A (Tc)
-
-
-
-
-
-
-
-
-
-
-
-
IMT65R030M1HXUMA1
Infineon Technologies

SILICON CARBIDE MOSFET

  • FET Type: -
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
pacchetto: -
Azione5.970
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
IPD70N10S3L12ATMA2
Infineon Technologies

MOSFET_(75V 120V(

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
100 V
70A (Tc)
4.5V, 10V
2.4V @ 83µA
77 nC @ 10 V
5550 pF @ 25 V
±20V
-
125W (Tc)
11.5mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
ISC032N12LM6ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 211W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8 FL
  • Package / Case: 8-PowerTDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
120 V
20A (Ta), 170A (Tc)
3.3V, 10V
2.2V @ 110µA
82 nC @ 10 V
5700 pF @ 60 V
±20V
-
3W (Ta), 211W (Tc)
3.2mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
IPZA60R045P7XKSA1
Infineon Technologies

MOSFET N-CH 650V 61A TO247-4-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.08mA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 201W (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-3
  • Package / Case: TO-247-4
pacchetto: -
Azione714
MOSFET (Metal Oxide)
650 V
61A (Tc)
10V
4V @ 1.08mA
90 nC @ 10 V
3891 pF @ 400 V
±20V
-
201W (Tc)
45mOhm @ 22.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4-3
TO-247-4
IPDQ60R040S7AXTMA1
Infineon Technologies

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 272W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-22-1
  • Package / Case: 22-PowerBSOP Module
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
14A (Tc)
12V
4.5V @ 790µA
83 nC @ 12 V
-
±20V
-
272W (Tc)
40mOhm @ 13A, 12V
-40°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
IPL60R105P7AUMA1
Infineon Technologies

MOSFET N-CH 600V 33A 4VSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 530µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 137W (Tc)
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 10.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-VSON-4
  • Package / Case: 4-PowerTSFN
pacchetto: -
Azione21.714
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
4V @ 530µA
45 nC @ 10 V
1952 pF @ 400 V
±20V
-
137W (Tc)
105mOhm @ 10.5A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-VSON-4
4-PowerTSFN
BSG0812NDATMA1
Infineon Technologies

MOSFET N-CH 8TISON

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRFC9140NB
Infineon Technologies

MOSFET 100V 23A DIE

  • FET Type: -
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 23A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 117mOhm @ 23A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
100 V
23A
10V
-
-
-
-
-
-
117mOhm @ 23A, 10V
-
Surface Mount
Die
Die
IMBG120R030M1HXTMA1
Infineon Technologies

SICFET N-CH 1.2KV 56A TO263

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.7V @ 11.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 800 V
  • Vgs (Max): +18V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-12
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
pacchetto: -
Azione2.892
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
-
5.7V @ 11.5mA
63 nC @ 18 V
2290 pF @ 800 V
+18V, -15V
-
300W (Tc)
41mOhm @ 25A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA