Pagina 29 - Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli

SPD18P06PGBTMA1

Infineon Technologies

MOSFET P-CH 60V 18.6A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

Azione24.882

MOSFET (Metal Oxide)

60 V

18.6A (Tc)

10V

4V @ 1mA

33 nC @ 10 V

860 pF @ 25 V

±20V

-

80W (Tc)

130mOhm @ 13.2A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

IAUC28N08S5L230ATMA1

Infineon Technologies

MOSFET N-CH 80V 28A 8TDSON-33

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-33
Package / Case: 8-PowerTDFN

pacchetto: -

Azione48.285

MOSFET (Metal Oxide)

80 V

28A (Tc)

4.5V, 10V

2V @ 11µA

15.1 nC @ 10 V

867 pF @ 40 V

±20V

-

38W (Tc)

23mOhm @ 14A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-33

8-PowerTDFN

BSC033N08NS5SCATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 76µA
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
Package / Case: 8-PowerWDFN

pacchetto: -

Azione14.685

MOSFET (Metal Oxide)

80 V

144A (Tc)

6V, 10V

3.8V @ 76µA

66 nC @ 10 V

4600 pF @ 40 V

±20V

-

136W (Tc)

3.3mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-WSON-8-2

8-PowerWDFN

AUIRF9Z34N

Infineon Technologies

MOSFET P-CH 55V 19A TO220AB

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

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MOSFET (Metal Oxide)

55 V

19A (Tc)

10V

4V @ 250µA

35 nC @ 10 V

620 pF @ 25 V

±20V

-

68W (Tc)

100mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IPT65R125CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Package / Case: 8-PowerSFN

pacchetto: -

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-

650 V

-

Surface Mount

PG-HSOF-8-3

8-PowerSFN

IRF8113TRPBF-1

Infineon Technologies

MOSFET N-CH 30V 17.2A 8SO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: -

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MOSFET (Metal Oxide)

30 V

17.2A (Ta)

4.5V, 10V

2.2V @ 250µA

36 nC @ 4.5 V

2910 pF @ 15 V

±20V

-

2.5W (Ta)

5.6mOhm @ 17.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

AUXHAFR6215

Infineon Technologies

IC DISCRETE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IAUCN04S7L006ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-43
Package / Case: 8-PowerTDFN

pacchetto: -

Azione3.000

MOSFET (Metal Oxide)

40 V

-

10V

-

124 nC @ 10 V

-

-55°C ~ 175°C

Surface Mount

PG-TDSON-8-43

8-PowerTDFN

IPB093N04LG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 77µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO-263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

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MOSFET (Metal Oxide)

40 V

50A (Tc)

4.5V, 10V

2V @ 77µA

28 nC @ 10 V

2100 pF @ 20 V

±20V

-

47W (Tc)

9.3mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO-263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IRFH7110TR2PBF

Infineon Technologies

MOSFET N CH 100V 11A PQFN5X6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-TQFN Exposed Pad

pacchetto: -

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MOSFET (Metal Oxide)

100 V

11A (Ta), 58A (Tc)

-

4V @ 100µA

87 nC @ 10 V

3240 pF @ 25 V

-

13.5mOhm @ 35A, 10V

-

Surface Mount

8-PQFN (5x6)

8-TQFN Exposed Pad

IPT063N15N5ATMA1

Infineon Technologies

TRENCH >=100V PG-HSOF-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 153µA
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8
Package / Case: 8-PowerSFN

pacchetto: -

Azione11.778

MOSFET (Metal Oxide)

150 V

16.2A (Ta), 122A (Tc)

8V, 10V

4.6V @ 153µA

59 nC @ 10 V

4550 pF @ 75 V

±20V

-

3.8W (Ta), 214W (Tc)

6.3mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8

8-PowerSFN

IPW60R070C6FKSA1

Infineon Technologies

MOSFET N-CH 600V 53A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 391W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

pacchetto: -

Azione1.710

MOSFET (Metal Oxide)

600 V

53A (Tc)

10V

3.5V @ 1.72mA

170 nC @ 10 V

3800 pF @ 100 V

±20V

-

391W (Tc)

70mOhm @ 25.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IRFB5615PBFXKMA1

Infineon Technologies

MOSFET N-CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacchetto: -

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MOSFET (Metal Oxide)

150 V

35A (Tc)

10V

5V @ 100µA

40 nC @ 10 V

1750 pF @ 50 V

±20V

-

144W (Tc)

39mOhm @ 21A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IPB80P04P405ATMA2

Infineon Technologies

MOSFET P-CH 40V 80A TO263-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Azione5.595

MOSFET (Metal Oxide)

40 V

80A (Tc)

-

4V @ 250µA

151 nC @ 10 V

10300 pF @ 25 V

±20V

-

125W (Tc)

5.2mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

SPP08N80C3XK

Infineon Technologies

MOSFET N-CH 800V 8A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

pacchetto: -

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MOSFET (Metal Oxide)

800 V

8A (Tc)

10V

3.9V @ 470µA

60 nC @ 10 V

1100 pF @ 100 V

±20V

-

104W (Tc)

650mOhm @ 5.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IMBG65R083M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET PG-TO263-

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

pacchetto: -

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SiCFET (Silicon Carbide)

650 V

28A (Tc)

18V

5.7V @ 3.3mA

19 nC @ 18 V

624 pF @ 400 V

+23V, -5V

-

126W (Tc)

111mOhm @ 11.2A, 18V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-12

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IPB80P04P4L06ATMA2

Infineon Technologies

MOSFET P-CH 40V 80A TO263-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Vgs (Max): +5V, -16V
FET Feature: -
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Azione10.029

MOSFET (Metal Oxide)

40 V

80A (Tc)

4.5V, 10V

2.2V @ 150µA

104 nC @ 10 V

6580 pF @ 25 V

+5V, -16V

-

88W (Tc)

6.7mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

SPA11N80C3XKSA1

Infineon Technologies

MOSFET N-CH 800V 11A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-31
Package / Case: TO-220-3 Full Pack

pacchetto: -

Azione5.904

MOSFET (Metal Oxide)

800 V

11A (Tc)

10V

3.9V @ 680µA

85 nC @ 10 V

1600 pF @ 100 V

±20V

-

34W (Tc)

450mOhm @ 7.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-31

TO-220-3 Full Pack

IPD25DP06LMSAUMA1

Infineon Technologies

MOSFET P-CH 60V 6.5A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

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MOSFET (Metal Oxide)

60 V

6.5A (Tc)

4.5V, 10V

2V @ 270µA

13.8 nC @ 10 V

420 pF @ 30 V

±20V

-

28W (Tc)

250mOhm @ 6.5A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPC60R600P7X7SA1

Infineon Technologies

MOSFET N-CH DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IGT60R042D1ATMA1

Infineon Technologies

GAN HV

FET Type: -
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Package / Case: 8-PowerSFN

pacchetto: -

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GaNFET (Gallium Nitride)

600 V

-

Surface Mount

PG-HSOF-8-3

8-PowerSFN

IPP60R090CFD7XKSA1

Infineon Technologies

MOSFET N-CH 600V 25A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

pacchetto: -

Azione1.428

MOSFET (Metal Oxide)

600 V

25A (Tc)

10V

4.5V @ 570µA

51 nC @ 10 V

2103 pF @ 400 V

±20V

-

125W (Tc)

90mOhm @ 11.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

AUIRFR4104TRL

Infineon Technologies

MOSFET N-CH 40V 42A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

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MOSFET (Metal Oxide)

40 V

42A (Tc)

-

4V @ 250µA

89 nC @ 10 V

2950 pF @ 25 V

-

140W (Tc)

5.5mOhm @ 42A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252AA (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

IMZA120R020M1HXKSA1

Infineon Technologies

SIC DISCRETE

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.2V @ 17.6mA
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 nF @ 25 V
Vgs (Max): +20V, -5V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-8
Package / Case: TO-247-4

pacchetto: -

Azione171

SiCFET (Silicon Carbide)

1200 V

98A (Tc)

15V, 18V

5.2V @ 17.6mA

83 nC @ 18 V

3460 nF @ 25 V

+20V, -5V

-

375W (Tc)

26.9mOhm @ 41A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-8

TO-247-4

IMBG65R020M2HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione1.500

-

BSC007N04LS6SCATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

pacchetto: -

Azione8.514

MOSFET (Metal Oxide)

40 V

48A (Ta), 381A (Tc)

4.5V, 10V

2.3V @ 250µA

118 nC @ 10 V

8400 pF @ 20 V

±20V

-

3W (Ta), 188W (Tc)

0.7mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IPDQ65R017CFD7AXTMA1

Infineon Technologies

AUTOMOTIVE_COOLMOS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

pacchetto: -

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MOSFET (Metal Oxide)

650 V

136A (Tc)

10V

4.5V @ 3.08mA

236 nC @ 10 V

12338 pF @ 400 V

±20V

-

694W (Tc)

17mOhm @ 61.6A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

IPP091N06N-G

Infineon Technologies

MOSFET N-CHAN TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 80A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

pacchetto: -

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MOSFET (Metal Oxide)

60 V

80A (Tc)

-

4V @ 130µA

81 nC @ 10 V

2800 pF @ 30 V

-

9.1mOhm @ 80A, 10V

-

Through Hole

PG-TO220-3

TO-220-3

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPD18P06PGBTMA1	Infineon Technologies	MOSFET P-CH 60V 18.6A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Azione24.882	MOSFET (Metal Oxide)	60 V	18.6A (Tc)	10V	4V @ 1mA	33 nC @ 10 V	860 pF @ 25 V	±20V	-	80W (Tc)	130mOhm @ 13.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IAUC28N08S5L230ATMA1	Infineon Technologies	MOSFET N-CH 80V 28A 8TDSON-33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	pacchetto: -	Azione48.285	MOSFET (Metal Oxide)	80 V	28A (Tc)	4.5V, 10V	2V @ 11µA	15.1 nC @ 10 V	867 pF @ 40 V	±20V	-	38W (Tc)	23mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
BSC033N08NS5SCATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 144A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 76µA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WSON-8-2 Package / Case: 8-PowerWDFN	pacchetto: -	Azione14.685	MOSFET (Metal Oxide)	80 V	144A (Tc)	6V, 10V	3.8V @ 76µA	66 nC @ 10 V	4600 pF @ 40 V	±20V	-	136W (Tc)	3.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WSON-8-2	8-PowerWDFN
AUIRF9Z34N	Infineon Technologies	MOSFET P-CH 55V 19A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	55 V	19A (Tc)	10V	4V @ 250µA	35 nC @ 10 V	620 pF @ 25 V	±20V	-	68W (Tc)	100mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPT65R125CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	pacchetto: -	Request a Quote	-	650 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-3	8-PowerSFN
IRF8113TRPBF-1	Infineon Technologies	MOSFET N-CH 30V 17.2A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	30 V	17.2A (Ta)	4.5V, 10V	2.2V @ 250µA	36 nC @ 4.5 V	2910 pF @ 15 V	±20V	-	2.5W (Ta)	5.6mOhm @ 17.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
AUXHAFR6215	Infineon Technologies	IC DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IAUCN04S7L006ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-43 Package / Case: 8-PowerTDFN	pacchetto: -	Azione3.000	MOSFET (Metal Oxide)	40 V	-	10V	-	124 nC @ 10 V	-	-	-	-	-	-55°C ~ 175°C	Surface Mount	PG-TDSON-8-43	8-PowerTDFN
IPB093N04LG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 77µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO-263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	40 V	50A (Tc)	4.5V, 10V	2V @ 77µA	28 nC @ 10 V	2100 pF @ 20 V	±20V	-	47W (Tc)	9.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO-263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFH7110TR2PBF	Infineon Technologies	MOSFET N CH 100V 11A PQFN5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-TQFN Exposed Pad	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	100 V	11A (Ta), 58A (Tc)	-	4V @ 100µA	87 nC @ 10 V	3240 pF @ 25 V	-	-	-	13.5mOhm @ 35A, 10V	-	Surface Mount	8-PQFN (5x6)	8-TQFN Exposed Pad
IPT063N15N5ATMA1	Infineon Technologies	TRENCH >=100V PG-HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 153µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	pacchetto: -	Azione11.778	MOSFET (Metal Oxide)	150 V	16.2A (Ta), 122A (Tc)	8V, 10V	4.6V @ 153µA	59 nC @ 10 V	4550 pF @ 75 V	±20V	-	3.8W (Ta), 214W (Tc)	6.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IPW60R070C6FKSA1	Infineon Technologies	MOSFET N-CH 600V 53A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.72mA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 391W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	pacchetto: -	Azione1.710	MOSFET (Metal Oxide)	600 V	53A (Tc)	10V	3.5V @ 1.72mA	170 nC @ 10 V	3800 pF @ 100 V	±20V	-	391W (Tc)	70mOhm @ 25.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IRFB5615PBFXKMA1	Infineon Technologies	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	150 V	35A (Tc)	10V	5V @ 100µA	40 nC @ 10 V	1750 pF @ 50 V	±20V	-	144W (Tc)	39mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPB80P04P405ATMA2	Infineon Technologies	MOSFET P-CH 40V 80A TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Azione5.595	MOSFET (Metal Oxide)	40 V	80A (Tc)	-	4V @ 250µA	151 nC @ 10 V	10300 pF @ 25 V	±20V	-	125W (Tc)	5.2mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SPP08N80C3XK	Infineon Technologies	MOSFET N-CH 800V 8A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 470µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	3.9V @ 470µA	60 nC @ 10 V	1100 pF @ 100 V	±20V	-	104W (Tc)	650mOhm @ 5.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IMBG65R083M1HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET PG-TO263- FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 126W (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	pacchetto: -	Request a Quote	SiCFET (Silicon Carbide)	650 V	28A (Tc)	18V	5.7V @ 3.3mA	19 nC @ 18 V	624 pF @ 400 V	+23V, -5V	-	126W (Tc)	111mOhm @ 11.2A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPB80P04P4L06ATMA2	Infineon Technologies	MOSFET P-CH 40V 80A TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Azione10.029	MOSFET (Metal Oxide)	40 V	80A (Tc)	4.5V, 10V	2.2V @ 150µA	104 nC @ 10 V	6580 pF @ 25 V	+5V, -16V	-	88W (Tc)	6.7mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SPA11N80C3XKSA1	Infineon Technologies	MOSFET N-CH 800V 11A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 680µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	pacchetto: -	Azione5.904	MOSFET (Metal Oxide)	800 V	11A (Tc)	10V	3.9V @ 680µA	85 nC @ 10 V	1600 pF @ 100 V	±20V	-	34W (Tc)	450mOhm @ 7.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
IPD25DP06LMSAUMA1	Infineon Technologies	MOSFET P-CH 60V 6.5A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	60 V	6.5A (Tc)	4.5V, 10V	2V @ 270µA	13.8 nC @ 10 V	420 pF @ 30 V	±20V	-	28W (Tc)	250mOhm @ 6.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPC60R600P7X7SA1	Infineon Technologies	MOSFET N-CH DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGT60R042D1ATMA1	Infineon Technologies	GAN HV FET Type: - Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	pacchetto: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-3	8-PowerSFN
IPP60R090CFD7XKSA1	Infineon Technologies	MOSFET N-CH 600V 25A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 570µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	pacchetto: -	Azione1.428	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	4.5V @ 570µA	51 nC @ 10 V	2103 pF @ 400 V	±20V	-	125W (Tc)	90mOhm @ 11.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
AUIRFR4104TRL	Infineon Technologies	MOSFET N-CH 40V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	40 V	42A (Tc)	-	4V @ 250µA	89 nC @ 10 V	2950 pF @ 25 V	-	-	140W (Tc)	5.5mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IMZA120R020M1HXKSA1	Infineon Technologies	SIC DISCRETE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.2V @ 17.6mA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3460 nF @ 25 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-8 Package / Case: TO-247-4	pacchetto: -	Azione171	SiCFET (Silicon Carbide)	1200 V	98A (Tc)	15V, 18V	5.2V @ 17.6mA	83 nC @ 18 V	3460 nF @ 25 V	+20V, -5V	-	375W (Tc)	26.9mOhm @ 41A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-8	TO-247-4
IMBG65R020M2HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione1.500	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC007N04LS6SCATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 188W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	pacchetto: -	Azione8.514	MOSFET (Metal Oxide)	40 V	48A (Ta), 381A (Tc)	4.5V, 10V	2.3V @ 250µA	118 nC @ 10 V	8400 pF @ 20 V	±20V	-	3W (Ta), 188W (Tc)	0.7mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IPDQ65R017CFD7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	650 V	136A (Tc)	10V	4.5V @ 3.08mA	236 nC @ 10 V	12338 pF @ 400 V	±20V	-	694W (Tc)	17mOhm @ 61.6A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IPP091N06N-G	Infineon Technologies	MOSFET N-CHAN TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9.1mOhm @ 80A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	60 V	80A (Tc)	-	4V @ 130µA	81 nC @ 10 V	2800 pF @ 30 V	-	-	-	9.1mOhm @ 80A, 10V	-	Through Hole	PG-TO220-3	TO-220-3