Pagina 28 - Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli

IPN80R1K2P7ATMA1

Infineon Technologies

MOSFET N-CH 800V 4.5A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223
Package / Case: TO-261-4, TO-261AA

pacchetto: -

Azione17.886

MOSFET (Metal Oxide)

800 V

4.5A (Tc)

10V

3.5V @ 80µA

11 nC @ 10 V

300 pF @ 500 V

±20V

-

6.8W (Tc)

1.2Ohm @ 1.7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT223

TO-261-4, TO-261AA

ISC151N20NM6ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs(th) (Max) @ Id: 4.5V @ 105µA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 50A, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

pacchetto: -

Azione15.000

MOSFET (Metal Oxide)

200 V

9.1A (Ta), 74A (Tc)

10V, 15V

4.5V @ 105µA

47 nC @ 10 V

3100 pF @ 100 V

±20V

-

3W (Ta), 200W (Tc)

14mOhm @ 50A, 15V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IPDQ60R025CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 32.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

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MOSFET (Metal Oxide)

600 V

90A (Tc)

10V

4.5V @ 1.63mA

141 nC @ 10 V

5626 pF @ 400 V

±20V

-

446W (Tc)

25mOhm @ 32.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

ISC0803NLSATMA1

Infineon Technologies

MOSFET N-CH 100V 8.8A/37A 8TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

pacchetto: -

Azione7.299

MOSFET (Metal Oxide)

100 V

8.8A (Ta), 37A (Tc)

4.5V, 10V

2.3V @ 18µA

15 nC @ 10 V

1000 pF @ 50 V

±20V

-

2.5W (Ta), 43W (Tc)

16.9mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPLK60R1K5PFD7ATMA1

Infineon Technologies

MOSFET N-CH 600V 3.8A THIN-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-52
Package / Case: 8-PowerTDFN

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MOSFET (Metal Oxide)

600 V

3.8A (Tc)

10V

4.5V @ 40µA

4.6 nC @ 10 V

169 pF @ 400 V

±20V

-

25W (Tc)

1.5Ohm @ 700mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-52

8-PowerTDFN

IRF2804LPBF

Infineon Technologies

MOSFET N-CH 40V 75A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

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MOSFET (Metal Oxide)

40 V

75A (Tc)

-

4V @ 250µA

240 nC @ 10 V

6450 pF @ 25 V

-

300W (Tc)

2.3mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2PAK, TO-262AA

IPTC007N06NM5ATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 454A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-16-U01
Package / Case: 16-PowerSOP Module

pacchetto: -

Azione3.045

MOSFET (Metal Oxide)

60 V

52A (Ta), 454A (Tc)

6V, 10V

3.3V @ 280µA

261 nC @ 10 V

21000 pF @ 30 V

±20V

-

3.8W (Ta), 375W (Tc)

0.75mOhm @ 150A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HDSOP-16-U01

16-PowerSOP Module

IPT044N15N5ATMA1

Infineon Technologies

TRENCH >=100V PG-HSOF-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 221µA
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8
Package / Case: 8-PowerSFN

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MOSFET (Metal Oxide)

150 V

174A (Tc)

8V, 10V

4.6V @ 221µA

84 nC @ 10 V

6500 pF @ 75 V

±20V

-

300W (Tc)

4.4mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8

8-PowerSFN

IPB123N10N3GATMA1

Infineon Technologies

MOSFET N-CH 100V 58A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Azione20.190

MOSFET (Metal Oxide)

100 V

58A (Tc)

6V, 10V

3.5V @ 46µA

35 nC @ 10 V

2500 pF @ 50 V

±20V

-

94W (Tc)

12.3mOhm @ 46A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPA65R420CFDXKSA2

Infineon Technologies

MOSFET N-CH 650V 8.7A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 31.2W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

pacchetto: -

Azione1.500

MOSFET (Metal Oxide)

650 V

8.7A (Tc)

10V

4.5V @ 300µA

31.5 nC @ 10 V

870 pF @ 100 V

±20V

-

31.2W (Tc)

420mOhm @ 3.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPW65R075CFD7AXKSA1

Infineon Technologies

MOSFET N-CH 650V 32A TO247-3-41

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
Package / Case: TO-247-3

pacchetto: -

Azione720

MOSFET (Metal Oxide)

650 V

32A (Tc)

10V

4.5V @ 820µA

68 nC @ 10 V

3288 pF @ 400 V

±20V

-

171W (Tc)

75mOhm @ 16.4A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-41

TO-247-3

IPC95R750P7X7SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

SPD03N50C3BTMA1

Infineon Technologies

MOSFET N-CH 560V 3.2A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 560 V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

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MOSFET (Metal Oxide)

560 V

3.2A (Tc)

10V

3.9V @ 135µA

15 nC @ 10 V

350 pF @ 25 V

±20V

-

38W (Tc)

1.4Ohm @ 2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

IRFH5250DTR2PBF

Infineon Technologies

MOSFET N-CH 25V 40A 8VQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerVDFN

pacchetto: -

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MOSFET (Metal Oxide)

25 V

40A (Ta), 100A (Tc)

-

2.35V @ 150µA

83 nC @ 10 V

6115 pF @ 13 V

-

1.4mOhm @ 50A, 10V

-

Surface Mount

8-PQFN (5x6)

8-PowerVDFN

SPP80P06PHXKSA1

Infineon Technologies

MOSFET P-CH 60V 80A TO220-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 340W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

pacchetto: -

Azione20.277

MOSFET (Metal Oxide)

60 V

80A (Tc)

10V

4V @ 5.5mA

173 nC @ 10 V

5033 pF @ 25 V

±20V

-

340W (Tc)

23mOhm @ 64A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IRFH8337TR2PBF

Infineon Technologies

MOSFET N-CH 30V 9.7A 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6)
Package / Case: 8-PowerTDFN

pacchetto: -

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MOSFET (Metal Oxide)

30 V

12A (Ta), 35A (Tc)

-

2.35V @ 25µA

10 nC @ 10 V

790 pF @ 10 V

-

12.8mOhm @ 16.2A, 10V

-

Surface Mount

PQFN (5x6)

8-PowerTDFN

IRLML6401TRPBF-1

Infineon Technologies

MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3-901
Package / Case: TO-236-3, SC-59, SOT-23-3

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MOSFET (Metal Oxide)

12 V

4.3A (Ta)

1.8V, 4.5V

950mV @ 250µA

15 nC @ 5 V

830 pF @ 10 V

±8V

-

1.3W (Ta)

50mOhm @ 4.3A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT23-3-901

TO-236-3, SC-59, SOT-23-3

BSC011N03LSTATMA1

Infineon Technologies

MOSFET N-CH 30V 39A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

pacchetto: -

Azione15.000

MOSFET (Metal Oxide)

30 V

39A (Ta), 100A (Tc)

4.5V, 10V

2V @ 250µA

48 nC @ 4.5 V

6300 pF @ 15 V

±20V

-

3W (Ta), 115W (Tc)

1.1mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IMDQ75R040M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 750 V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

pacchetto: -

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SiC (Silicon Carbide Junction Transistor)

750 V

47A (Tc)

15V, 20V

5.6V @ 6mA

34 nC @ 18 V

1135 pF @ 500 V

+23V, -5V

-

211W (Tc)

37mOhm @ 16.6A, 20V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

IPB025N08N3GATMA1

Infineon Technologies

MOSFET N-CH 80V 120A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Azione45.303

MOSFET (Metal Oxide)

80 V

120A (Tc)

6V, 10V

3.5V @ 270µA

206 nC @ 10 V

14200 pF @ 40 V

±20V

-

300W (Tc)

2.5mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPC60R380C6X7SA1

Infineon Technologies

MOSFET N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Request a Quote

-

IAUS300N10S5N014ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-HSOG-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOG-8-1
Package / Case: 8-PowerSMD, Gull Wing

pacchetto: -

Azione3.681

MOSFET (Metal Oxide)

100 V

360A (Tj)

6V, 10V

3.8V @ 275µA

216 nC @ 10 V

16011 pF @ 50 V

±20V

-

375W (Tc)

1.4mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOG-8-1

8-PowerSMD, Gull Wing

IPF023N08NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V PG-TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 139µA
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-14
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

pacchetto: -

Azione2.400

MOSFET (Metal Oxide)

80 V

209A (Tc)

6V, 10V

3.8V @ 139µA

133 nC @ 10 V

6200 pF @ 40 V

±20V

-

214W (Tc)

2.3mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-14

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

AIMZA75R090M1HXKSA1

Infineon Technologies

AUTOMOTIVE_SICMOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Request a Quote

-

IPSA70R600P7SAKMA1

Infineon Technologies

MOSFET N-CH 700V 8.5A TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 43.1W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA

pacchetto: -

Request a Quote

MOSFET (Metal Oxide)

700 V

8.5A (Tc)

10V

3.5V @ 90µA

10.5 nC @ 400 V

364 pF @ 400 V

±16V

-

43.1W (Tc)

600mOhm @ 1.8A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO251-3

TO-251-3 Short Leads, IPAK, TO-251AA

IPB081N06L3GATMA1

Infineon Technologies

MOSFET N-CH 60V 50A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Azione15.453

MOSFET (Metal Oxide)

60 V

50A (Tc)

4.5V, 10V

2.2V @ 34µA

29 nC @ 4.5 V

4900 pF @ 30 V

±20V

-

79W (Tc)

8.1mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IMZA65R050M2HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Request a Quote

-

IPTG210N25NM3FDATMA1

Infineon Technologies

TRENCH >=100V PG-HSOG-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOG-8-1
Package / Case: 8-PowerSMD, Gull Wing

pacchetto: -

Request a Quote

MOSFET (Metal Oxide)

250 V

7.7A (Ta), 77A (Tc)

10V

4V @ 267µA

81 nC @ 10 V

7000 pF @ 125 V

±20V

-

3.8W (Ta), 375W (Tc)

21mOhm @ 69A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOG-8-1

8-PowerSMD, Gull Wing

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPN80R1K2P7ATMA1	Infineon Technologies	MOSFET N-CH 800V 4.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.8W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	pacchetto: -	Azione17.886	MOSFET (Metal Oxide)	800 V	4.5A (Tc)	10V	3.5V @ 80µA	11 nC @ 10 V	300 pF @ 500 V	±20V	-	6.8W (Tc)	1.2Ohm @ 1.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
ISC151N20NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 4.5V @ 105µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 50A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	pacchetto: -	Azione15.000	MOSFET (Metal Oxide)	200 V	9.1A (Ta), 74A (Tc)	10V, 15V	4.5V @ 105µA	47 nC @ 10 V	3100 pF @ 100 V	±20V	-	3W (Ta), 200W (Tc)	14mOhm @ 50A, 15V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IPDQ60R025CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.63mA Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 32.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	600 V	90A (Tc)	10V	4.5V @ 1.63mA	141 nC @ 10 V	5626 pF @ 400 V	±20V	-	446W (Tc)	25mOhm @ 32.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
ISC0803NLSATMA1	Infineon Technologies	MOSFET N-CH 100V 8.8A/37A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 18µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	pacchetto: -	Azione7.299	MOSFET (Metal Oxide)	100 V	8.8A (Ta), 37A (Tc)	4.5V, 10V	2.3V @ 18µA	15 nC @ 10 V	1000 pF @ 50 V	±20V	-	2.5W (Ta), 43W (Tc)	16.9mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPLK60R1K5PFD7ATMA1	Infineon Technologies	MOSFET N-CH 600V 3.8A THIN-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-52 Package / Case: 8-PowerTDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	600 V	3.8A (Tc)	10V	4.5V @ 40µA	4.6 nC @ 10 V	169 pF @ 400 V	±20V	-	25W (Tc)	1.5Ohm @ 700mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-52	8-PowerTDFN
IRF2804LPBF	Infineon Technologies	MOSFET N-CH 40V 75A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	40 V	75A (Tc)	-	4V @ 250µA	240 nC @ 10 V	6450 pF @ 25 V	-	-	300W (Tc)	2.3mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA
IPTC007N06NM5ATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 454A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-16-U01 Package / Case: 16-PowerSOP Module	pacchetto: -	Azione3.045	MOSFET (Metal Oxide)	60 V	52A (Ta), 454A (Tc)	6V, 10V	3.3V @ 280µA	261 nC @ 10 V	21000 pF @ 30 V	±20V	-	3.8W (Ta), 375W (Tc)	0.75mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-16-U01	16-PowerSOP Module
IPT044N15N5ATMA1	Infineon Technologies	TRENCH >=100V PG-HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 221µA Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	150 V	174A (Tc)	8V, 10V	4.6V @ 221µA	84 nC @ 10 V	6500 pF @ 75 V	±20V	-	300W (Tc)	4.4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IPB123N10N3GATMA1	Infineon Technologies	MOSFET N-CH 100V 58A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Azione20.190	MOSFET (Metal Oxide)	100 V	58A (Tc)	6V, 10V	3.5V @ 46µA	35 nC @ 10 V	2500 pF @ 50 V	±20V	-	94W (Tc)	12.3mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPA65R420CFDXKSA2	Infineon Technologies	MOSFET N-CH 650V 8.7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31.2W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	pacchetto: -	Azione1.500	MOSFET (Metal Oxide)	650 V	8.7A (Tc)	10V	4.5V @ 300µA	31.5 nC @ 10 V	870 pF @ 100 V	±20V	-	31.2W (Tc)	420mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPW65R075CFD7AXKSA1	Infineon Technologies	MOSFET N-CH 650V 32A TO247-3-41 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 820µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	pacchetto: -	Azione720	MOSFET (Metal Oxide)	650 V	32A (Tc)	10V	4.5V @ 820µA	68 nC @ 10 V	3288 pF @ 400 V	±20V	-	171W (Tc)	75mOhm @ 16.4A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
IPC95R750P7X7SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPD03N50C3BTMA1	Infineon Technologies	MOSFET N-CH 560V 3.2A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	560 V	3.2A (Tc)	10V	3.9V @ 135µA	15 nC @ 10 V	350 pF @ 25 V	±20V	-	38W (Tc)	1.4Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFH5250DTR2PBF	Infineon Technologies	MOSFET N-CH 25V 40A 8VQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	25 V	40A (Ta), 100A (Tc)	-	2.35V @ 150µA	83 nC @ 10 V	6115 pF @ 13 V	-	-	-	1.4mOhm @ 50A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
SPP80P06PHXKSA1	Infineon Technologies	MOSFET P-CH 60V 80A TO220-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	pacchetto: -	Azione20.277	MOSFET (Metal Oxide)	60 V	80A (Tc)	10V	4V @ 5.5mA	173 nC @ 10 V	5033 pF @ 25 V	±20V	-	340W (Tc)	23mOhm @ 64A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRFH8337TR2PBF	Infineon Technologies	MOSFET N-CH 30V 9.7A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	30 V	12A (Ta), 35A (Tc)	-	2.35V @ 25µA	10 nC @ 10 V	790 pF @ 10 V	-	-	-	12.8mOhm @ 16.2A, 10V	-	Surface Mount	PQFN (5x6)	8-PowerTDFN
IRLML6401TRPBF-1	Infineon Technologies	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3-901 Package / Case: TO-236-3, SC-59, SOT-23-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	12 V	4.3A (Ta)	1.8V, 4.5V	950mV @ 250µA	15 nC @ 5 V	830 pF @ 10 V	±8V	-	1.3W (Ta)	50mOhm @ 4.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3-901	TO-236-3, SC-59, SOT-23-3
BSC011N03LSTATMA1	Infineon Technologies	MOSFET N-CH 30V 39A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	pacchetto: -	Azione15.000	MOSFET (Metal Oxide)	30 V	39A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	48 nC @ 4.5 V	6300 pF @ 15 V	±20V	-	3W (Ta), 115W (Tc)	1.1mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IMDQ75R040M1HXUMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs(th) (Max) @ Id: 5.6V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	pacchetto: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	750 V	47A (Tc)	15V, 20V	5.6V @ 6mA	34 nC @ 18 V	1135 pF @ 500 V	+23V, -5V	-	211W (Tc)	37mOhm @ 16.6A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IPB025N08N3GATMA1	Infineon Technologies	MOSFET N-CH 80V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Azione45.303	MOSFET (Metal Oxide)	80 V	120A (Tc)	6V, 10V	3.5V @ 270µA	206 nC @ 10 V	14200 pF @ 40 V	±20V	-	300W (Tc)	2.5mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPC60R380C6X7SA1	Infineon Technologies	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IAUS300N10S5N014ATMA1	Infineon Technologies	MOSFET_(75V 120V( PG-HSOG-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 360A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8-1 Package / Case: 8-PowerSMD, Gull Wing	pacchetto: -	Azione3.681	MOSFET (Metal Oxide)	100 V	360A (Tj)	6V, 10V	3.8V @ 275µA	216 nC @ 10 V	16011 pF @ 50 V	±20V	-	375W (Tc)	1.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOG-8-1	8-PowerSMD, Gull Wing
IPF023N08NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V PG-TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 139µA Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-14 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	pacchetto: -	Azione2.400	MOSFET (Metal Oxide)	80 V	209A (Tc)	6V, 10V	3.8V @ 139µA	133 nC @ 10 V	6200 pF @ 40 V	±20V	-	214W (Tc)	2.3mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-14	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
AIMZA75R090M1HXKSA1	Infineon Technologies	AUTOMOTIVE_SICMOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPSA70R600P7SAKMA1	Infineon Technologies	MOSFET N-CH 700V 8.5A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 43.1W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	700 V	8.5A (Tc)	10V	3.5V @ 90µA	10.5 nC @ 400 V	364 pF @ 400 V	±16V	-	43.1W (Tc)	600mOhm @ 1.8A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPAK, TO-251AA
IPB081N06L3GATMA1	Infineon Technologies	MOSFET N-CH 60V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Azione15.453	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	2.2V @ 34µA	29 nC @ 4.5 V	4900 pF @ 30 V	±20V	-	79W (Tc)	8.1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IMZA65R050M2HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPTG210N25NM3FDATMA1	Infineon Technologies	TRENCH >=100V PG-HSOG-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 267µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8-1 Package / Case: 8-PowerSMD, Gull Wing	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	250 V	7.7A (Ta), 77A (Tc)	10V	4V @ 267µA	81 nC @ 10 V	7000 pF @ 125 V	±20V	-	3.8W (Ta), 375W (Tc)	21mOhm @ 69A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOG-8-1	8-PowerSMD, Gull Wing