Pagina 189 - Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli

IPB60R099CPAATMA1

Infineon Technologies

MOSFET N-CH 600V 31A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione7.104

MOSFET (Metal Oxide)

600V

31A (Tc)

10V

3.5V @ 1.2mA

80nC @ 10V

2800pF @ 100V

±20V

-

255W (Tc)

105 mOhm @ 18A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPW60R099P7XKSA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione7.184

-

IPB110N20N3LFATMA1

Infineon Technologies

MOSFET N-CH 200 D2PAK-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione2.640

-

IRF6678TRPBF

Infineon Technologies

MOSFET N-CH 30V 30A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MX
Package / Case: DirectFET? Isometric MX

pacchetto: DirectFET? Isometric MX

Azione61.764

MOSFET (Metal Oxide)

30V

30A (Ta), 150A (Tc)

4.5V, 10V

2.25V @ 250µA

65nC @ 4.5V

5640pF @ 15V

±20V

-

2.8W (Ta), 89W (Tc)

2.2 mOhm @ 30A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

DIRECTFET? MX

DirectFET? Isometric MX

IPW65R125C7XKSA1

Infineon Technologies

MOSFET N-CH 650V TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 8.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

pacchetto: TO-247-3

Azione5.664

MOSFET (Metal Oxide)

650V

18A (Tc)

10V

4V @ 440µA

35nC @ 10V

1670pF @ 400V

±20V

-

101W (Tc)

125 mOhm @ 8.9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPB048N15N5LFATMA1

Infineon Technologies

DIFFERENTIATED MOSFETS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione5.088

-

IPP65R095C7XKSA1

Infineon Technologies

MOSFET N-CH 650V TO-220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

pacchetto: TO-220-3

Azione5.440

MOSFET (Metal Oxide)

650V

24A (Tc)

10V

4V @ 590µA

45nC @ 10V

2140pF @ 400V

±20V

-

128W (Tc)

95 mOhm @ 11.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPA65R095C7XKSA1

Infineon Technologies

MOSFET N-CH 650V TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

Azione5.984

MOSFET (Metal Oxide)

650V

12A (Tc)

10V

4V @ 590µA

45nC @ 10V

2140pF @ 400V

±20V

-

34W (Tc)

95 mOhm @ 11.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPT043N15N5ATMA1

Infineon Technologies

MV POWER MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione6.672

-

IPT111N20NFDATMA1

Infineon Technologies

MV POWER MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione2.832

-

AUIRFP2907Z

Infineon Technologies

MOSFET N-CH 75V 170A TO247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

pacchetto: TO-247-3

Azione4.320

MOSFET (Metal Oxide)

75V

170A (Tc)

10V

4V @ 250µA

270nC @ 10V

7500pF @ 25V

±20V

-

310W (Tc)

4.5 mOhm @ 90A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

IRFSL4127PBF

Infineon Technologies

MOSFET N-CH 200V 72A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

Azione5.136

MOSFET (Metal Oxide)

200V

72A (Tc)

-

5V @ 250µA

150nC @ 10V

5380pF @ 50V

-

375W (Tc)

22 mOhm @ 44A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2Pak, TO-262AA

AUIRF3004WL

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9450pF @ 32V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 195A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-262-3 Wide
Package / Case: TO-262-3 Wide Leads

pacchetto: TO-262-3 Wide Leads

Azione2.096

MOSFET (Metal Oxide)

40V

240A (Tc)

10V

4V @ 250µA

210nC @ 10V

9450pF @ 32V

±20V

-

375W (Tc)

1.4 mOhm @ 195A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-262-3 Wide

TO-262-3 Wide Leads

IPB044N15N5ATMA1

Infineon Technologies

MV POWER MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione3.536

-

IPB020N10N5LFATMA1

Infineon Technologies

MOSFET N-CH 100V D2PAK-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione6.080

-

IPT60R080G7XTMA1

Infineon Technologies

MOSFET N-CH 650V 29A HSOF-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 80 mOhm @ 9.7A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8
Package / Case: 8-PowerSFN

pacchetto: 8-PowerSFN

Azione3.728

MOSFET (Metal Oxide)

650V

29A (Tc)

10V

4V @ 490µA

42nC @ 10V

1640pF @ 400V

±20V

-

167W (Tc)

80 mOhm @ 9.7A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8

8-PowerSFN

IPP60R080P7XKSA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione2.400

-

IPA60R080P7XKSA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione3.504

-

IRFS7734-7PPBF

Infineon Technologies

MOSFET N-CH 75V 183A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 3.05 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (TO-263AB)
Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Azione6.464

MOSFET (Metal Oxide)

75V

197A (Tc)

6V, 10V

3.7V @ 150µA

270nC @ 10V

10130pF @ 25V

±20V

-

294W (Tc)

3.05 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK (TO-263AB)

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IPB65R110CFDAATMA1

Infineon Technologies

MOSFET N-CH TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione3.280

MOSFET (Metal Oxide)

650V

31.2A (Tc)

10V

4.5V @ 1.3mA

118nC @ 10V

3240pF @ 100V

±20V

-

277.8W (Tc)

110 mOhm @ 12.7A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO263

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPZ60R125P6FKSA1

Infineon Technologies

MOSFET N-CH 600V TO247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 99 mOhm @ 14.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

pacchetto: TO-247-4

Azione2.896

MOSFET (Metal Oxide)

600V

37.9A (Tc)

10V

4.5V @ 1.21mA

70nC @ 10V

3330pF @ 100V

±20V

-

219W (Tc)

99 mOhm @ 14.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4

TO-247-4

IPW60R120C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 19A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 92W (Tc)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 7.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

pacchetto: TO-247-3

Azione5.136

MOSFET (Metal Oxide)

600V

19A (Tc)

10V

4V @ 390µA

34nC @ 10V

1500pF @ 400V

±20V

-

92W (Tc)

120 mOhm @ 7.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPA65R110CFDXKSA1

Infineon Technologies

MOSFET N-CH 650V 31.2A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34.7W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220 Full Pack
Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

Azione4.528

MOSFET (Metal Oxide)

650V

31.2A (Tc)

10V

4.5V @ 1.3mA

118nC @ 10V

3240pF @ 100V

±20V

-

34.7W (Tc)

110 mOhm @ 12.7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220 Full Pack

TO-220-3 Full Pack

IPI65R110CFDXKSA1

Infineon Technologies

MOSFET N-CH 650V 31.2A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

Azione6.240

MOSFET (Metal Oxide)

650V

31.2A (Tc)

10V

4.5V @ 1.3mA

118nC @ 10V

3240pF @ 100V

±20V

-

277.8W (Tc)

110 mOhm @ 12.7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI60R125CPXKSA1

Infineon Technologies

MOSFET N-CH 650V 25A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

Azione3.344

MOSFET (Metal Oxide)

650V

25A (Tc)

10V

3.5V @ 1.1mA

70nC @ 10V

2500pF @ 100V

±20V

-

208W (Tc)

125 mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPA60R099C7XKSA1

Infineon Technologies

MOSFET N-CH 600V TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1819pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 99 mOhm @ 9.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

Azione6.176

MOSFET (Metal Oxide)

600V

12A (Tc)

10V

4V @ 490µA

42nC @ 10V

1819pF @ 400V

±20V

-

33W (Tc)

99 mOhm @ 9.7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPI90R340C3XKSA1

Infineon Technologies

MOSFET N-CH 900V 15A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

Azione5.200

MOSFET (Metal Oxide)

900V

15A (Tc)

10V

3.5V @ 1mA

94nC @ 10V

2400pF @ 100V

±20V

-

208W (Tc)

340 mOhm @ 9.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPC60R099C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione3.312

-

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB60R099CPAATMA1	Infineon Technologies	MOSFET N-CH 600V 31A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione7.104	MOSFET (Metal Oxide)	600V	31A (Tc)	10V	3.5V @ 1.2mA	80nC @ 10V	2800pF @ 100V	±20V	-	255W (Tc)	105 mOhm @ 18A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPW60R099P7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione7.184	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB110N20N3LFATMA1	Infineon Technologies	MOSFET N-CH 200 D2PAK-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione2.640	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF6678TRPBF	Infineon Technologies	MOSFET N-CH 30V 30A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	pacchetto: DirectFET? Isometric MX	Azione61.764	MOSFET (Metal Oxide)	30V	30A (Ta), 150A (Tc)	4.5V, 10V	2.25V @ 250µA	65nC @ 4.5V	5640pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	2.2 mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IPW65R125C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 101W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 8.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	pacchetto: TO-247-3	Azione5.664	MOSFET (Metal Oxide)	650V	18A (Tc)	10V	4V @ 440µA	35nC @ 10V	1670pF @ 400V	±20V	-	101W (Tc)	125 mOhm @ 8.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPB048N15N5LFATMA1	Infineon Technologies	DIFFERENTIATED MOSFETS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione5.088	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP65R095C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	pacchetto: TO-220-3	Azione5.440	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 590µA	45nC @ 10V	2140pF @ 400V	±20V	-	128W (Tc)	95 mOhm @ 11.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPA65R095C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	pacchetto: TO-220-3 Full Pack	Azione5.984	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 590µA	45nC @ 10V	2140pF @ 400V	±20V	-	34W (Tc)	95 mOhm @ 11.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPT043N15N5ATMA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione6.672	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPT111N20NFDATMA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione2.832	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRFP2907Z	Infineon Technologies	MOSFET N-CH 75V 170A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	pacchetto: TO-247-3	Azione4.320	MOSFET (Metal Oxide)	75V	170A (Tc)	10V	4V @ 250µA	270nC @ 10V	7500pF @ 25V	±20V	-	310W (Tc)	4.5 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFSL4127PBF	Infineon Technologies	MOSFET N-CH 200V 72A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V Vgs (Max): - FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA	Azione5.136	MOSFET (Metal Oxide)	200V	72A (Tc)	-	5V @ 250µA	150nC @ 10V	5380pF @ 50V	-	-	375W (Tc)	22 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AUIRF3004WL	Infineon Technologies	MOSFET N-CH 40V 240A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9450pF @ 32V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-262-3 Wide Package / Case: TO-262-3 Wide Leads	pacchetto: TO-262-3 Wide Leads	Azione2.096	MOSFET (Metal Oxide)	40V	240A (Tc)	10V	4V @ 250µA	210nC @ 10V	9450pF @ 32V	±20V	-	375W (Tc)	1.4 mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-262-3 Wide	TO-262-3 Wide Leads
IPB044N15N5ATMA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione3.536	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB020N10N5LFATMA1	Infineon Technologies	MOSFET N-CH 100V D2PAK-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione6.080	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPT60R080G7XTMA1	Infineon Technologies	MOSFET N-CH 650V 29A HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 9.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	pacchetto: 8-PowerSFN	Azione3.728	MOSFET (Metal Oxide)	650V	29A (Tc)	10V	4V @ 490µA	42nC @ 10V	1640pF @ 400V	±20V	-	167W (Tc)	80 mOhm @ 9.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IPP60R080P7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione2.400	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA60R080P7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione3.504	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFS7734-7PPBF	Infineon Technologies	MOSFET N-CH 75V 183A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 197A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 3.05 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Azione6.464	MOSFET (Metal Oxide)	75V	197A (Tc)	6V, 10V	3.7V @ 150µA	270nC @ 10V	10130pF @ 25V	±20V	-	294W (Tc)	3.05 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IPB65R110CFDAATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione3.280	MOSFET (Metal Oxide)	650V	31.2A (Tc)	10V	4.5V @ 1.3mA	118nC @ 10V	3240pF @ 100V	±20V	-	277.8W (Tc)	110 mOhm @ 12.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPZ60R125P6FKSA1	Infineon Technologies	MOSFET N-CH 600V TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	pacchetto: TO-247-4	Azione2.896	MOSFET (Metal Oxide)	600V	37.9A (Tc)	10V	4.5V @ 1.21mA	70nC @ 10V	3330pF @ 100V	±20V	-	219W (Tc)	99 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
IPW60R120C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 19A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	pacchetto: TO-247-3	Azione5.136	MOSFET (Metal Oxide)	600V	19A (Tc)	10V	4V @ 390µA	34nC @ 10V	1500pF @ 400V	±20V	-	92W (Tc)	120 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPA65R110CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 31.2A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34.7W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	pacchetto: TO-220-3 Full Pack	Azione4.528	MOSFET (Metal Oxide)	650V	31.2A (Tc)	10V	4.5V @ 1.3mA	118nC @ 10V	3240pF @ 100V	±20V	-	34.7W (Tc)	110 mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IPI65R110CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 31.2A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA	Azione6.240	MOSFET (Metal Oxide)	650V	31.2A (Tc)	10V	4.5V @ 1.3mA	118nC @ 10V	3240pF @ 100V	±20V	-	277.8W (Tc)	110 mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPI60R125CPXKSA1	Infineon Technologies	MOSFET N-CH 650V 25A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA	Azione3.344	MOSFET (Metal Oxide)	650V	25A (Tc)	10V	3.5V @ 1.1mA	70nC @ 10V	2500pF @ 100V	±20V	-	208W (Tc)	125 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPA60R099C7XKSA1	Infineon Technologies	MOSFET N-CH 600V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1819pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 9.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	pacchetto: TO-220-3 Full Pack	Azione6.176	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 490µA	42nC @ 10V	1819pF @ 400V	±20V	-	33W (Tc)	99 mOhm @ 9.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPI90R340C3XKSA1	Infineon Technologies	MOSFET N-CH 900V 15A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA	Azione5.200	MOSFET (Metal Oxide)	900V	15A (Tc)	10V	3.5V @ 1mA	94nC @ 10V	2400pF @ 100V	±20V	-	208W (Tc)	340 mOhm @ 9.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPC60R099C6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione3.312	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-