Pagina 145 - Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli

SIPC03N50C3X1SA1

Infineon Technologies

TRANSISTOR N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione6.832

-

IPU60R1K5CEAKMA2

Infineon Technologies

MOSFET N-CH 600V 3.1A TO-251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 49W (Tc)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO251
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

Azione7.280

MOSFET (Metal Oxide)

600V

3.1A (Tc)

10V

3.5V @ 90µA

9.4nC @ 10V

200pF @ 100V

±20V

-

49W (Tc)

1.5 Ohm @ 1.1A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO251

TO-251-3 Short Leads, IPak, TO-251AA

IPU60R1K5CEAKMA1

Infineon Technologies

MOSFET N-CH 600V TO-251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

Azione3.536

MOSFET (Metal Oxide)

600V

3.1A (Tc)

-

3.5V @ 90µA

9.4nC @ 10V

200pF @ 100V

-

1.5 Ohm @ 1.1A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO251-3

TO-251-3 Short Leads, IPak, TO-251AA

IPN50R800CEATMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione2.976

-

IRLR8726TRLPBF

Infineon Technologies

MOSFET N-CH 30V 86A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione5.280

MOSFET (Metal Oxide)

30V

86A (Tc)

4.5V, 10V

2.35V @ 50µA

23nC @ 4.5V

2150pF @ 15V

±20V

-

75W (Tc)

5.8 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

IPC022N03L3X1SA1

Infineon Technologies

MOSFET N-CH 30V SAWN BARE DIE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Sawn on foil
Package / Case: Die

pacchetto: Die

Azione5.440

MOSFET (Metal Oxide)

30V

1A (Tj)

10V

2.2V @ 250µA

-

50 mOhm @ 2A, 10V

-

Surface Mount

Sawn on foil

Die

IRLR8729TRLPBF

Infineon Technologies

MOSFET N-CH 30V 58A D-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione36.000

MOSFET (Metal Oxide)

30V

58A (Tc)

4.5V, 10V

2.35V @ 25µA

16nC @ 4.5V

1350pF @ 15V

±20V

-

55W (Tc)

8.9 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

IPSA70R2K0CEAKMA1

Infineon Technologies

MOSFET COOLMOS 700V TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Stub Leads, IPak

pacchetto: TO-251-3 Stub Leads, IPak

Azione2.720

MOSFET (Metal Oxide)

700V

4A (Tc)

10V

3.5V @ 70µA

7.8nC @ 10V

163pF @ 100V

±20V

-

42W (Tc)

2 Ohm @ 1A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO251-3

TO-251-3 Stub Leads, IPak

IPD70R2K0CEAUMA1

Infineon Technologies

MOSFET N-CH TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione5.040

MOSFET (Metal Oxide)

700V

4A (Tc)

10V

3.5V @ 70µA

7.8nC @ 10V

163pF @ 100V

±20V

Super Junction

42W (Tc)

2 Ohm @ 1A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

BSL303SPEH6327XTSA1

Infineon Technologies

MOSFET P-CH 30V 6.3A TSOP-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1401pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

pacchetto: SOT-23-6 Thin, TSOT-23-6

Azione6.288

MOSFET (Metal Oxide)

30V

6.3A (Ta)

4.5V, 10V

2V @ 30µA

20.9nC @ 10V

1401pF @ 15V

±20V

-

2W (Ta)

33 mOhm @ 6.3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

IPC60R3K3C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione7.792

-

IPU50R950CEAKMA2

Infineon Technologies

MOSFET N-CH 500V 4.3A TO251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO251
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

Azione5.904

MOSFET (Metal Oxide)

500V

4.3A (Tc)

13V

3.5V @ 100µA

10.5nC @ 10V

231pF @ 100V

±20V

-

53W (Tc)

950 mOhm @ 1.2A, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO251

TO-251-3 Short Leads, IPak, TO-251AA

IPD50R1K4CEAUMA1

Infineon Technologies

MOSFET N-CH 500V 3.1A PG-TO-252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione4.896

MOSFET (Metal Oxide)

500V

3.1A (Tc)

13V

3.5V @ 70µA

8.2nC @ 10V

178pF @ 100V

±20V

-

42W (Tc)

1.4 Ohm @ 900mA, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

IPN70R2K1CEATMA1

Infineon Technologies

MOSFET COOLMOS 700V SOT223-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223
Package / Case: TO-261-4, TO-261AA

pacchetto: TO-261-4, TO-261AA

Azione5.696

MOSFET (Metal Oxide)

750V

4A (Tc)

10V

3.5V @ 70µA

7.8nC @ 10V

163pF @ 100V

±20V

-

5W (Tc)

2.1 Ohm @ 1A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-SOT223

TO-261-4, TO-261AA

IPS60R2K1CEAKMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione2.752

-

BSL802SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 20V 7.5A 6TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs(th) (Max) @ Id: 0.75V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds: 1347pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 2.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

pacchetto: SOT-23-6 Thin, TSOT-23-6

Azione5.616

MOSFET (Metal Oxide)

20V

7.5A (Ta)

1.8V, 2.5V

0.75V @ 30µA

4.7nC @ 2.5V

1347pF @ 10V

±8V

-

2W (Ta)

22 mOhm @ 7.5A, 2.5V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

BSL302SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 30V 7.1A 6TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: P-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

pacchetto: SOT-23-6 Thin, TSOT-23-6

Azione2.416

MOSFET (Metal Oxide)

30V

7.1A (Ta)

4.5V, 10V

2V @ 30µA

6.6nC @ 5V

750pF @ 15V

±20V

-

2W (Ta)

25 mOhm @ 7.1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

P-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

IPN60R1K5CEATMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione4.864

-

BSL202SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 20V 7.5A 6TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1147pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

pacchetto: SOT-23-6 Thin, TSOT-23-6

Azione3.344

MOSFET (Metal Oxide)

20V

7.5A (Ta)

2.5V, 4.5V

1.2V @ 30µA

8.7nC @ 10V

1147pF @ 10V

±12V

-

2W (Ta)

22 mOhm @ 7.5A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

IPD50R2K0CEBTMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione6.160

-

IPU50R1K4CEAKMA1

Infineon Technologies

MOSFET N-CH 500V 3.1A TO-251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

Azione3.440

MOSFET (Metal Oxide)

500V

3.1A (Tc)

13V

3.5V @ 70µA

8.2nC @ 10V

178pF @ 100V

±20V

-

42W (Tc)

1.4 Ohm @ 900mA, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO251-3

TO-251-3 Short Leads, IPak, TO-251AA

IPD50R2K0CEAUMA1

Infineon Technologies

MOSFET N-CH 500V 2.4A PG-TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 600mA, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione7.856

MOSFET (Metal Oxide)

500V

2.4A (Tc)

13V

3.5V @ 50µA

6nC @ 10V

124pF @ 100V

±20V

-

33W (Tc)

2 Ohm @ 600mA, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

BSL305SPEH6327XTSA1

Infineon Technologies

MOSFET P-CH 30V 5.3A TSOP-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

pacchetto: SOT-23-6 Thin, TSOT-23-6

Azione3.312

MOSFET (Metal Oxide)

30V

5.3A (Ta)

4.5V, 10V

2V @ 20µA

14nC @ 10V

939pF @ 15V

±20V

-

2W (Ta)

45 mOhm @ 5.3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

IRFH8330TRPBF

Infineon Technologies

MOSFET N-CH 30V 56A 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.3W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6)
Package / Case: 8-PowerTDFN

pacchetto: 8-PowerTDFN

Azione6.432

MOSFET (Metal Oxide)

30V

17A (Ta), 56A (Tc)

4.5V, 10V

2.35V @ 25µA

20nC @ 10V

1450pF @ 25V

±20V

-

3.3W (Ta), 35W (Tc)

6.6 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PQFN (5x6)

8-PowerTDFN

IPU60R2K1CEAKMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione2.528

-

IPU50R2K0CEAKMA1

Infineon Technologies

MOSFET N-CH 500V 2.4A TO-251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 600mA, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO251
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

Azione2.032

MOSFET (Metal Oxide)

500V

2.4A (Tc)

13V

3.5V @ 50µA

6nC @ 10V

124pF @ 100V

±20V

-

33W (Tc)

2 Ohm @ 600mA, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO251

TO-251-3 Short Leads, IPak, TO-251AA

IPN50R950CEATMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione2.800

-

IPU50R3K0CEAKMA1

Infineon Technologies

MOSFET N-CH 500V 1.7A TO-251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO251
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

Azione6.160

MOSFET (Metal Oxide)

500V

1.7A (Tc)

13V

3.5V @ 30µA

4.3nC @ 10V

84pF @ 100V

±20V

-

26W (Tc)

3 Ohm @ 400mA, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO251

TO-251-3 Short Leads, IPak, TO-251AA

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIPC03N50C3X1SA1	Infineon Technologies	TRANSISTOR N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione6.832	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPU60R1K5CEAKMA2	Infineon Technologies	MOSFET N-CH 600V 3.1A TO-251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	pacchetto: TO-251-3 Short Leads, IPak, TO-251AA	Azione7.280	MOSFET (Metal Oxide)	600V	3.1A (Tc)	10V	3.5V @ 90µA	9.4nC @ 10V	200pF @ 100V	±20V	-	49W (Tc)	1.5 Ohm @ 1.1A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO251	TO-251-3 Short Leads, IPak, TO-251AA
IPU60R1K5CEAKMA1	Infineon Technologies	MOSFET N-CH 600V TO-251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	pacchetto: TO-251-3 Short Leads, IPak, TO-251AA	Azione3.536	MOSFET (Metal Oxide)	600V	3.1A (Tc)	-	3.5V @ 90µA	9.4nC @ 10V	200pF @ 100V	-	-	-	1.5 Ohm @ 1.1A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IPN50R800CEATMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione2.976	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLR8726TRLPBF	Infineon Technologies	MOSFET N-CH 30V 86A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione5.280	MOSFET (Metal Oxide)	30V	86A (Tc)	4.5V, 10V	2.35V @ 50µA	23nC @ 4.5V	2150pF @ 15V	±20V	-	75W (Tc)	5.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPC022N03L3X1SA1	Infineon Technologies	MOSFET N-CH 30V SAWN BARE DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	pacchetto: Die	Azione5.440	MOSFET (Metal Oxide)	30V	1A (Tj)	10V	2.2V @ 250µA	-	-	-	-	-	50 mOhm @ 2A, 10V	-	Surface Mount	Sawn on foil	Die
IRLR8729TRLPBF	Infineon Technologies	MOSFET N-CH 30V 58A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione36.000	MOSFET (Metal Oxide)	30V	58A (Tc)	4.5V, 10V	2.35V @ 25µA	16nC @ 4.5V	1350pF @ 15V	±20V	-	55W (Tc)	8.9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPSA70R2K0CEAKMA1	Infineon Technologies	MOSFET COOLMOS 700V TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	pacchetto: TO-251-3 Stub Leads, IPak	Azione2.720	MOSFET (Metal Oxide)	700V	4A (Tc)	10V	3.5V @ 70µA	7.8nC @ 10V	163pF @ 100V	±20V	-	42W (Tc)	2 Ohm @ 1A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IPD70R2K0CEAUMA1	Infineon Technologies	MOSFET N-CH TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione5.040	MOSFET (Metal Oxide)	700V	4A (Tc)	10V	3.5V @ 70µA	7.8nC @ 10V	163pF @ 100V	±20V	Super Junction	42W (Tc)	2 Ohm @ 1A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSL303SPEH6327XTSA1	Infineon Technologies	MOSFET P-CH 30V 6.3A TSOP-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1401pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione6.288	MOSFET (Metal Oxide)	30V	6.3A (Ta)	4.5V, 10V	2V @ 30µA	20.9nC @ 10V	1401pF @ 15V	±20V	-	2W (Ta)	33 mOhm @ 6.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
IPC60R3K3C6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione7.792	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPU50R950CEAKMA2	Infineon Technologies	MOSFET N-CH 500V 4.3A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	pacchetto: TO-251-3 Short Leads, IPak, TO-251AA	Azione5.904	MOSFET (Metal Oxide)	500V	4.3A (Tc)	13V	3.5V @ 100µA	10.5nC @ 10V	231pF @ 100V	±20V	-	53W (Tc)	950 mOhm @ 1.2A, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO251	TO-251-3 Short Leads, IPak, TO-251AA
IPD50R1K4CEAUMA1	Infineon Technologies	MOSFET N-CH 500V 3.1A PG-TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione4.896	MOSFET (Metal Oxide)	500V	3.1A (Tc)	13V	3.5V @ 70µA	8.2nC @ 10V	178pF @ 100V	±20V	-	42W (Tc)	1.4 Ohm @ 900mA, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPN70R2K1CEATMA1	Infineon Technologies	MOSFET COOLMOS 700V SOT223-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	pacchetto: TO-261-4, TO-261AA	Azione5.696	MOSFET (Metal Oxide)	750V	4A (Tc)	10V	3.5V @ 70µA	7.8nC @ 10V	163pF @ 100V	±20V	-	5W (Tc)	2.1 Ohm @ 1A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
IPS60R2K1CEAKMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione2.752	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSL802SNH6327XTSA1	Infineon Technologies	MOSFET N-CH 20V 7.5A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Vgs(th) (Max) @ Id: 0.75V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 1347pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 2.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione5.616	MOSFET (Metal Oxide)	20V	7.5A (Ta)	1.8V, 2.5V	0.75V @ 30µA	4.7nC @ 2.5V	1347pF @ 10V	±8V	-	2W (Ta)	22 mOhm @ 7.5A, 2.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
BSL302SNH6327XTSA1	Infineon Technologies	MOSFET N-CH 30V 7.1A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione2.416	MOSFET (Metal Oxide)	30V	7.1A (Ta)	4.5V, 10V	2V @ 30µA	6.6nC @ 5V	750pF @ 15V	±20V	-	2W (Ta)	25 mOhm @ 7.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	P-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
IPN60R1K5CEATMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione4.864	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSL202SNH6327XTSA1	Infineon Technologies	MOSFET N-CH 20V 7.5A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1147pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione3.344	MOSFET (Metal Oxide)	20V	7.5A (Ta)	2.5V, 4.5V	1.2V @ 30µA	8.7nC @ 10V	1147pF @ 10V	±12V	-	2W (Ta)	22 mOhm @ 7.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
IPD50R2K0CEBTMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione6.160	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPU50R1K4CEAKMA1	Infineon Technologies	MOSFET N-CH 500V 3.1A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	pacchetto: TO-251-3 Short Leads, IPak, TO-251AA	Azione3.440	MOSFET (Metal Oxide)	500V	3.1A (Tc)	13V	3.5V @ 70µA	8.2nC @ 10V	178pF @ 100V	±20V	-	42W (Tc)	1.4 Ohm @ 900mA, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IPD50R2K0CEAUMA1	Infineon Technologies	MOSFET N-CH 500V 2.4A PG-TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 600mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione7.856	MOSFET (Metal Oxide)	500V	2.4A (Tc)	13V	3.5V @ 50µA	6nC @ 10V	124pF @ 100V	±20V	-	33W (Tc)	2 Ohm @ 600mA, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSL305SPEH6327XTSA1	Infineon Technologies	MOSFET P-CH 30V 5.3A TSOP-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione3.312	MOSFET (Metal Oxide)	30V	5.3A (Ta)	4.5V, 10V	2V @ 20µA	14nC @ 10V	939pF @ 15V	±20V	-	2W (Ta)	45 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
IRFH8330TRPBF	Infineon Technologies	MOSFET N-CH 30V 56A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	pacchetto: 8-PowerTDFN	Azione6.432	MOSFET (Metal Oxide)	30V	17A (Ta), 56A (Tc)	4.5V, 10V	2.35V @ 25µA	20nC @ 10V	1450pF @ 25V	±20V	-	3.3W (Ta), 35W (Tc)	6.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerTDFN
IPU60R2K1CEAKMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione2.528	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPU50R2K0CEAKMA1	Infineon Technologies	MOSFET N-CH 500V 2.4A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 600mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	pacchetto: TO-251-3 Short Leads, IPak, TO-251AA	Azione2.032	MOSFET (Metal Oxide)	500V	2.4A (Tc)	13V	3.5V @ 50µA	6nC @ 10V	124pF @ 100V	±20V	-	33W (Tc)	2 Ohm @ 600mA, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO251	TO-251-3 Short Leads, IPak, TO-251AA
IPN50R950CEATMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione2.800	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPU50R3K0CEAKMA1	Infineon Technologies	MOSFET N-CH 500V 1.7A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	pacchetto: TO-251-3 Short Leads, IPak, TO-251AA	Azione6.160	MOSFET (Metal Oxide)	500V	1.7A (Tc)	13V	3.5V @ 30µA	4.3nC @ 10V	84pF @ 100V	±20V	-	26W (Tc)	3 Ohm @ 400mA, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO251	TO-251-3 Short Leads, IPak, TO-251AA