Pagina 21 - Prodotti Infineon Technologies - Diodi - Raddrizzatori - Singoli | Heisener Electronics
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Prodotti Infineon Technologies - Diodi - Raddrizzatori - Singoli

Record 805
Pagina  21/29
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SIDC01D120H6
Infineon Technologies

DIODE GEN PURP 1.2KV 600MA WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 600mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 600mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: Die
Azione2.448
1200V
600mA (DC)
1.6V @ 600mA
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SDT10S60
Infineon Technologies

DIODE SCHOTTKY 600V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 350µA @ 600V
  • Capacitance @ Vr, F: 350pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione6.256
600V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
350µA @ 600V
350pF @ 0V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
hot SDT08S60
Infineon Technologies

DIODE SCHOTTKY 600V 8A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 300µA @ 600V
  • Capacitance @ Vr, F: 280pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione10.764
600V
8A (DC)
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
300µA @ 600V
280pF @ 0V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
SDT05S60
Infineon Technologies

DIODE SCHOTTKY 600V 5A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 170pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione3.152
600V
5A (DC)
1.7V @ 5A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
170pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
SDP10S30
Infineon Technologies

DIODE SCHOTTKY 300V 10A TO220-3

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 300V
  • Capacitance @ Vr, F: 600pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-3
Azione3.568
300V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 300V
600pF @ 0V, 1MHz
Through Hole
TO-220-3
PG-TO220-3
-55°C ~ 175°C
hot SDD04S60
Infineon Technologies

DIODE SCHOTTKY 600V 4A TO252-3

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 150pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: P-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione12.000
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
150pF @ 0V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-TO252-3
-55°C ~ 175°C
hot SDB06S60
Infineon Technologies

DIODE SCHOTTKY 600V 6A D2PAK

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 300pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione54.780
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
300pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
MMBD914LT3HTMA1
Infineon Technologies

DIODE GEN PURP 100V 250MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.008
100V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
IDH16S60CAKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 16A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 16A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 650pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione4.416
600V
16A (DC)
1.7V @ 16A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
650pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDH12S60CAKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 12A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 160µA @ 600V
  • Capacitance @ Vr, F: 530pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione2.384
600V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
160µA @ 600V
530pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDH10S60CAKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 140µA @ 600V
  • Capacitance @ Vr, F: 480pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione3.392
600V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
140µA @ 600V
480pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDH08S60CAKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 8A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 310pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione5.696
600V
8A (DC)
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
310pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDH06S60CAKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 6A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 80µA @ 600V
  • Capacitance @ Vr, F: 280pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione5.296
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDH05S60CAKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 5A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 70µA @ 600V
  • Capacitance @ Vr, F: 240pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione4.048
600V
5A (DC)
1.7V @ 5A
No Recovery Time > 500mA (Io)
0ns
70µA @ 600V
240pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDH04S60CAKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 4A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione3.152
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
130pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
BAT 64-02W E6327
Infineon Technologies

DIODE SCHOTTKY 40V 120MA SCD80-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 120mA
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 30V
  • Capacitance @ Vr, F: 6pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-80
Azione6.064
40V
120mA
750mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 30V
6pF @ 1V, 1MHz
Surface Mount
SC-80
PG-SCD80-2
150°C (Max)
BAT 60B E6433
Infineon Technologies

DIODE SCHOTTKY 10V 3A SOD323-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25µA @ 8V
  • Capacitance @ Vr, F: 30pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: PG-SOD323-2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-76, SOD-323
Azione2.560
10V
3A (DC)
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
25µA @ 8V
30pF @ 5V, 1MHz
Surface Mount
SC-76, SOD-323
PG-SOD323-2
150°C (Max)
BAS 70-02W E6327
Infineon Technologies

DIODE SCHOTTKY 70V 70MA SCD80-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: SC-80
Azione6.480
70V
70mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
100ps
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
SC-80
PG-SCD80-2
-55°C ~ 125°C
hot BAS 52-02V E6327
Infineon Technologies

DIODE SCHOTTKY 45V 750MA SC79-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 750mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 45V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-79, SOD-523
Azione173.892
45V
750mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 45V
10pF @ 10V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
BAS5202VE6127XT
Infineon Technologies

DIODE SCHOTTKY 45V 750MA SC79-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 750mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 45V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-79, SOD-523
Azione5.072
45V
750mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 45V
10pF @ 10V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
BAS16WE6433HTMA1
Infineon Technologies

DIODE GEN PURP 80V 250MA SOT323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-70, SOT-323
Azione7.040
80V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
PG-SOT323-3
150°C (Max)
BAS 16-02W E6327
Infineon Technologies

DIODE GEN PURP 80V 200MA SCD80-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-80
Azione3.680
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-80
PG-SCD80-2
150°C (Max)
BAS 16-02V E6327
Infineon Technologies

DIODE GEN PURP 80V 200MA SC79-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-79, SOD-523
Azione4.864
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
hot SDT12S60
Infineon Technologies

DIODE SCHOTTKY 600V 12A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 400µA @ 600V
  • Capacitance @ Vr, F: 450pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione32.232
600V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
400µA @ 600V
450pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
hot SDT10S30
Infineon Technologies

DIODE SCHOTTKY 300V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 300V
  • Capacitance @ Vr, F: 600pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione9.876
300V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 300V
600pF @ 0V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
hot SDT06S60
Infineon Technologies

DIODE SCHOTTKY 600V 6A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 300pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione30.096
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
300pF @ 0V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
hot SDT04S60
Infineon Technologies

DIODE SCHOTTKY 600V 4A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 150pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione52.524
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
150pF @ 0V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
hot SDP06S60
Infineon Technologies

DIODE SCHOTTKY 600V 6A TO220AB

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 300pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: P-TO220AB
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-3
Azione15.756
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
300pF @ 0V, 1MHz
Through Hole
TO-220-3
P-TO220AB
-55°C ~ 175°C