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Prodotti Infineon Technologies - Diodi - Raddrizzatori - Singoli

Record 805
Pagina  19/29
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IDH04G65C6XKSA1
Infineon Technologies

SIC DIODES

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Azione3.552
-
-
-
-
-
-
-
-
-
-
-
IDK04G65C5XTMA2
Infineon Technologies

DIODE SCHOTTKY 650V 4A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 670µA @ 650V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.808
650V
4A (DC)
1.8V @ 4A
No Recovery Time > 500mA (Io)
0ns
670µA @ 650V
130pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDP18E120XKSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 31A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 31A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.15V @ 18A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 195ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-2
Azione4.960
1200V
31A (DC)
2.15V @ 18A
Fast Recovery =< 500ns, > 200mA (Io)
195ns
100µA @ 1200V
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 150°C
IDK03G65C5XTMA2
Infineon Technologies

DIODE SCHOTTKY 650V 3A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 500µA @ 650V
  • Capacitance @ Vr, F: 100pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.136
650V
3A (DC)
1.8V @ 3A
No Recovery Time > 500mA (Io)
0ns
500µA @ 650V
100pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDW30E60FKSA1
Infineon Technologies

DIODE GEN PURP 600V 60A TO247-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 143ns
  • Current - Reverse Leakage @ Vr: 40µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-247-3
Azione5.856
600V
60A (DC)
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
143ns
40µA @ 600V
-
Through Hole
TO-247-3
TO-247-3
-40°C ~ 175°C
IDB30E60ATMA1
Infineon Technologies

DIODE GEN PURP 600V 52.3A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 52.3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 126ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.528
600V
52.3A (DC)
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
126ns
50µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
-40°C ~ 175°C
IDP30E60XKSA1
Infineon Technologies

DIODE GEN PURP 600V 52.3A TO220

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 52.3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 126ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione7.312
600V
52.3A (DC)
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
126ns
50µA @ 600V
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDP30E65D2XKSA1
Infineon Technologies

DIODE GEN PURP 650V 60A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 60A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 42ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-220-2
Azione3.296
650V
60A (DC)
2.2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
42ns
40µA @ 650V
-
Through Hole
TO-220-2
PG-TO220-2-1
-40°C ~ 175°C
IDK02G65C5XTMA2
Infineon Technologies

DIODE SCHOTTKY 650V 2A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 330µA @ 650V
  • Capacitance @ Vr, F: 70pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione4.944
650V
2A (DC)
1.8V @ 2A
No Recovery Time > 500mA (Io)
0ns
330µA @ 650V
70pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDB15E60ATMA1
Infineon Technologies

DIODE GEN PURP 600V 29.2A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 29.2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 87ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.360
600V
29.2A (DC)
2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
87ns
50µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-40°C ~ 175°C
IDP12E120XKSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 28A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 28A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.15V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-2
Azione3.600
1200V
28A (DC)
2.15V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
100µA @ 1200V
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 150°C
IDP15E60XKSA1
Infineon Technologies

DIODE GEN PURP 600V 29.2A TO220

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 29.2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 87ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione4.048
600V
29.2A (DC)
2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
87ns
50µA @ 600V
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDP20E65D2XKSA1
Infineon Technologies

DIODE GEN PURP 650V 40A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 40A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 32ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-220-2
Azione2.336
650V
40A (DC)
2.2V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
32ns
40µA @ 650V
-
Through Hole
TO-220-2
PG-TO220-2-1
-40°C ~ 175°C
BAT2402ELSE6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 4V 110MA SC79-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 4V
  • Current - Average Rectified (Io): 110mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1V
  • Capacitance @ Vr, F: 230pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-XFDFN
  • Supplier Device Package: PG-TSSLP-2-1
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: 2-XFDFN
Azione3.232
4V
110mA (DC)
410mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 1V
230pF @ 0V, 1MHz
Surface Mount
2-XFDFN
PG-TSSLP-2-1
-55°C ~ 150°C
IDD15E60BUMA2
Infineon Technologies

DIODE GEN PURP 600V 29.2A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 29.2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 87ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.648
600V
29.2A (DC)
2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
87ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDD09E60BUMA1
Infineon Technologies

DIODE GEN PURP 600V 19.3A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 19.3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione2.064
600V
19.3A (DC)
2V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDD06E60BUMA1
Infineon Technologies

DIODE GEN PURP 600V 14.7A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 14.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.488
600V
14.7A (DC)
2V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
BAT1502LSE6433XTMA1
Infineon Technologies

DIODE SCHOTTKY 4V 110MA TSSLP-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 4V
  • Current - Average Rectified (Io): 110mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1V
  • Capacitance @ Vr, F: 350pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-XFDFN
  • Supplier Device Package: PG-TSSLP-2-3
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: 2-XFDFN
Azione3.488
4V
110mA (DC)
410mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 1V
350pF @ 0V, 1MHz
Surface Mount
2-XFDFN
PG-TSSLP-2-3
-55°C ~ 150°C
BAT1502ELE6327XTMA1
Infineon Technologies

DIODE SCHOTTKY 4V 110MA TSLP-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 4V
  • Current - Average Rectified (Io): 110mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1V
  • Capacitance @ Vr, F: 350pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-XDFN
  • Supplier Device Package: PG-TSLP-2-19
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: 2-XDFN
Azione3.328
4V
110mA (DC)
410mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 1V
350pF @ 0V, 1MHz
Surface Mount
2-XDFN
PG-TSLP-2-19
-55°C ~ 150°C
BAW78DH6327XTSA1
Infineon Technologies

DIODE GP 400V 1A SOT89

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1µs
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: 10pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PG-SOT89
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-243AA
Azione5.488
400V
1A (DC)
1.6V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1µs
1µA @ 400V
10pF @ 0V, 1MHz
Surface Mount
TO-243AA
PG-SOT89
150°C (Max)
BAT6202VH6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 40V SC79-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 20mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 40V
  • Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-79, SOD-523
Azione2.208
40V
20mA (DC)
1V @ 2mA
Small Signal =< 200mA (Io), Any Speed
-
10µA @ 40V
0.6pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
BAS3005S02LRHE6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 30V 500MA TSLP-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 500mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 30V
  • Capacitance @ Vr, F: 15pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: PG-TSLP-2
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: SOD-882
Azione3.568
30V
500mA (DC)
500mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 30V
15pF @ 5V, 1MHz
Surface Mount
SOD-882
PG-TSLP-2
-55°C ~ 150°C
BAT5402LRHE6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 30V 200MA TSLP-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: PG-TSLP-2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SOD-882
Azione3.552
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SOD-882
PG-TSLP-2
150°C (Max)
BAS7002VH6327XTSA1
Infineon Technologies

DIODE SCHOTTKY HS 70V 70MA SC79

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SOD323-2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-79, SOD-523
Azione2.368
70V
70mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
100ps
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SOD323-2
150°C (Max)
BAS5202VH6433XTMA1
Infineon Technologies

DIODE SCHOTTKY 45V 750MA SC79-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 750mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 45V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-79, SOD-523
Azione7.280
45V
750mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 45V
10pF @ 10V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
BAS7002LE6327XTMA1
Infineon Technologies

DIODE SCHOTTKY 70V 70MA TSLP-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: PG-TSLP-2
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: SOD-882
Azione3.920
70V
70mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
100ps
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
SOD-882
PG-TSLP-2
-55°C ~ 125°C
BAS4002LE6327XTMA1
Infineon Technologies

DIODE SCHOTTKY 40V 120MA TSLP-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 1µA @ 30V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: PG-TSLP-2
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: SOD-882
Azione3.184
40V
120mA (DC)
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
100ps
1µA @ 30V
5pF @ 0V, 1MHz
Surface Mount
SOD-882
PG-TSLP-2
-55°C ~ 150°C
BAT54WH6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 30V 200MA SOT323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-70, SOT-323
Azione7.776
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SC-70, SOT-323
PG-SOT323-3
150°C (Max)