Pagina 37 - Prodotti Fairchild/ON Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Fairchild/ON Semiconductor - Transistor - FET, MOSFET - Singoli

Record 3.066
Pagina  37/110
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
FCH060N80_F155
Fairchild/ON Semiconductor

MOSFET N-CH 800V 56A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 5.8mA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14685pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 29A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione10.248
MOSFET (Metal Oxide)
800V
56A (Tc)
10V
4.5V @ 5.8mA
350nC @ 10V
14685pF @ 100V
±20V
Super Junction
500W (Tc)
60 mOhm @ 29A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
FCH023N65S3L4
Fairchild/ON Semiconductor

MOSFET N-CH 650V 75A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 222nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7160pF @ 400V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 595W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 37.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-4
pacchetto: TO-247-4
Azione10.896
MOSFET (Metal Oxide)
650V
75A (Tc)
10V
4.5V @ 7.5mA
222nC @ 10V
7160pF @ 400V
±30V
-
595W (Tc)
23 mOhm @ 37.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-4
FCH085N80_F155
Fairchild/ON Semiconductor

MOSFET N-CH 800V 46A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10825pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 446W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione10.836
MOSFET (Metal Oxide)
800V
46A (Tc)
10V
4.5V @ 4.6mA
255nC @ 10V
10825pF @ 100V
±20V
Super Junction
446W (Tc)
85 mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
FCH041N65EFL4
Fairchild/ON Semiconductor

MOSFET N-CH 650V 76A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 7.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 298nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12560pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 595W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
pacchetto: TO-247-4
Azione10.668
MOSFET (Metal Oxide)
650V
76A (Tc)
10V
5V @ 7.6mA
298nC @ 10V
12560pF @ 100V
±20V
-
595W (Tc)
41 mOhm @ 38A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4L
TO-247-4
FCH041N65EF_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 76A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 7.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 298nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12560pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 595W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione7.704
MOSFET (Metal Oxide)
650V
76A (Tc)
10V
5V @ 7.6mA
298nC @ 10V
12560pF @ 100V
±20V
Super Junction
595W (Tc)
41 mOhm @ 38A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
FCH47N60F_F085
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 47A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione10.200
MOSFET (Metal Oxide)
600V
47A (Tc)
10V
5V @ 250µA
250nC @ 10V
8000pF @ 25V
±30V
-
417W (Tc)
75 mOhm @ 47A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot FCH76N60NF
Fairchild/ON Semiconductor

MOSFET N-CH 600V 72.8A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 72.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione392.868
MOSFET (Metal Oxide)
600V
72.8A (Tc)
10V
5V @ 250µA
300nC @ 10V
11045pF @ 100V
±30V
-
543W (Tc)
38 mOhm @ 38A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
FCH041N65F_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 76A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 7.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 294nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13020pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 595W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione9.612
MOSFET (Metal Oxide)
650V
76A (Tc)
10V
5V @ 7.6mA
294nC @ 10V
13020pF @ 100V
±20V
-
595W (Tc)
41 mOhm @ 38A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
FCH041N65F_F085
Fairchild/ON Semiconductor

MOSFET N-CH 650V 76A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 304nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13566pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 595W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione7.248
MOSFET (Metal Oxide)
650V
76A (Tc)
10V
5V @ 250µA
304nC @ 10V
13566pF @ 25V
±20V
-
595W (Tc)
41 mOhm @ 38A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
FCH041N60F_F085
Fairchild/ON Semiconductor

MOSFET N CH 600V 76A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 347nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 595W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione6.780
MOSFET (Metal Oxide)
600V
76A (Tc)
10V
5V @ 250µA
347nC @ 10V
10900pF @ 25V
±20V
-
595W (Tc)
41 mOhm @ 38A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
FCH47N60_F085
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 79 mOhm @ 47A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione10.188
MOSFET (Metal Oxide)
600V
47A (Tc)
10V
5V @ 250µA
250nC @ 10V
8000pF @ 25V
±30V
-
417W (Tc)
79 mOhm @ 47A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot FQL40N50F
Fairchild/ON Semiconductor

MOSFET N-CH 500V 40A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264
  • Package / Case: TO-264-3, TO-264AA
pacchetto: TO-264-3, TO-264AA
Azione103.584
MOSFET (Metal Oxide)
500V
40A (Tc)
10V
5V @ 250µA
200nC @ 10V
7500pF @ 25V
±30V
-
460W (Tc)
110 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264
TO-264-3, TO-264AA
hot FCA36N60NF
Fairchild/ON Semiconductor

MOSFET N-CH 600V 34.9A TO3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4245pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 312W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione103.464
MOSFET (Metal Oxide)
600V
34.9A (Tc)
10V
5V @ 250µA
112nC @ 10V
4245pF @ 100V
±30V
-
312W (Tc)
95 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
FCH077N65F_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 54A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7109pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 481W (Tc)
  • Rds On (Max) @ Id, Vgs: 77 mOhm @ 27A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione6.792
MOSFET (Metal Oxide)
650V
54A (Tc)
10V
5V @ 5.4mA
164nC @ 10V
7109pF @ 100V
±20V
-
481W (Tc)
77 mOhm @ 27A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
FCPF36N60NT
Fairchild/ON Semiconductor

MOSFET N-CH 600V 36A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4785pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione17.568
MOSFET (Metal Oxide)
600V
36A (Tc)
10V
4V @ 250µA
112nC @ 10V
4785pF @ 100V
±30V
-
-
90 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
FCH067N65S3_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 44A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 400V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 312W (Tc)
  • Rds On (Max) @ Id, Vgs: 67 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione6.972
MOSFET (Metal Oxide)
650V
44A (Tc)
10V
4.5V @ 4.4mA
78nC @ 10V
3090pF @ 400V
±30V
Super Junction
312W (Tc)
67 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
hot FCH072N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 52A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 380V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 481W (Tc)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione104.244
MOSFET (Metal Oxide)
600V
52A (Tc)
10V
3.5V @ 250µA
125nC @ 10V
5890pF @ 380V
±20V
-
481W (Tc)
72 mOhm @ 26A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot FCA35N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 35A TO-3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 312.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 17.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione103.716
MOSFET (Metal Oxide)
600V
35A (Tc)
10V
5V @ 250µA
181nC @ 10V
6640pF @ 25V
±30V
-
312.5W (Tc)
98 mOhm @ 17.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
FCH47N60_F133
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione14.880
MOSFET (Metal Oxide)
600V
47A (Tc)
10V
5V @ 250µA
270nC @ 10V
8000pF @ 25V
±30V
-
417W (Tc)
70 mOhm @ 23.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot FCH070N60E
Fairchild/ON Semiconductor

MOSFET N-CH 600V 52A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4925pF @ 380V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 481W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione103.824
MOSFET (Metal Oxide)
600V
52A (Tc)
10V
3.5V @ 250µA
166nC @ 10V
4925pF @ 380V
±20V
-
481W (Tc)
70 mOhm @ 26A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
FCH077N65F_F085
Fairchild/ON Semiconductor

MOSFET N-CH 650V 54A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7162pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 481W (Tc)
  • Rds On (Max) @ Id, Vgs: 77 mOhm @ 27A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione8.508
MOSFET (Metal Oxide)
650V
54A (Tc)
10V
5V @ 250µA
164nC @ 10V
7162pF @ 25V
±20V
-
481W (Tc)
77 mOhm @ 27A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot FCH25N60N
Fairchild/ON Semiconductor

MOSFET N-CH 600V 25A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3352pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 216W (Tc)
  • Rds On (Max) @ Id, Vgs: 126 mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione72.000
MOSFET (Metal Oxide)
600V
25A (Tc)
10V
4V @ 250µA
74nC @ 10V
3352pF @ 100V
±30V
-
216W (Tc)
126 mOhm @ 12.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
FCH072N60F_F085
Fairchild/ON Semiconductor

MOSFET N-CH 600V 52A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6330pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 481W (Tc)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione10.320
MOSFET (Metal Oxide)
600V
52A (Tc)
10V
5V @ 250µA
210nC @ 10V
6330pF @ 100V
±20V
-
481W (Tc)
72 mOhm @ 26A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
FDH210N08
Fairchild/ON Semiconductor

MOSFET N-CH 75V 210A TO-247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 462W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione7.368
MOSFET (Metal Oxide)
75V
-
10V
-
-
-
±20V
-
462W (Tc)
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
HUF75852G3
Fairchild/ON Semiconductor

MOSFET N-CH 150V 75A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 480nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7690pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione8.628
MOSFET (Metal Oxide)
150V
75A (Tc)
10V
4V @ 250µA
480nC @ 20V
7690pF @ 25V
±20V
-
500W (Tc)
16 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
FCB110N65F
Fairchild/ON Semiconductor

MOSFET N-CH 650V 35A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4895pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 17.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione4.464
MOSFET (Metal Oxide)
650V
35A (Tc)
10V
5V @ 3.5mA
145nC @ 10V
4895pF @ 100V
±20V
-
357W (Tc)
110 mOhm @ 17.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCP220N80
Fairchild/ON Semiconductor

MOSFET N-CH 800V 23A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 2.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione19.584
MOSFET (Metal Oxide)
800V
23A (Tc)
10V
4.5V @ 2.3mA
105nC @ 10V
4560pF @ 100V
±20V
-
278W (Tc)
220 mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
FDB86135
Fairchild/ON Semiconductor

MOSFET N-CH 100V D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7295pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione2.208
MOSFET (Metal Oxide)
100V
75A (Tc)
10V
4V @ 250µA
116nC @ 10V
7295pF @ 25V
±20V
-
2.4W (Ta), 227W (Tc)
3.5 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB