Pagina 110 - Prodotti Fairchild/ON Semiconductor - Transistor - FET, MOSFET - Singoli

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDB088N08_F141	Fairchild/ON Semiconductor	MOSFET N-CH 75V 2PAK-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione3.616	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCA47N60F_SN00171	Fairchild/ON Semiconductor	MOSFET N-CH TO-3PN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione4.688	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDC655BN_NBNN007	Fairchild/ON Semiconductor	MOSFET N-CH SSOT6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione3.232	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDS6298_G	Fairchild/ON Semiconductor	MOSFET N-CH 8SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione6.432	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDS4465_SN00187	Fairchild/ON Semiconductor	MOSFET P-CH 20V 8-SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione7.040	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FQD5N50CTM_WS	Fairchild/ON Semiconductor	N-CHANNEL ADVANCE QFET C-SERIES FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione3.216	MOSFET (Metal Oxide)	500V	4A (Tc)	10V	4V @ 250µA	24nC @ 10V	625pF @ 25V	±30V	-	2.5W (Ta)	1.4 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FQB9P25TM	Fairchild/ON Semiconductor	MOSFET P-CH 250V 9.4A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 620 mOhm @ 4.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione11.268	MOSFET (Metal Oxide)	250V	9.4A (Tc)	10V	5V @ 250µA	38nC @ 10V	1180pF @ 25V	±30V	-	3.13W (Ta), 120W (Tc)	620 mOhm @ 4.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDD8453LZ_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3515pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 118W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione5.776	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	3V @ 250µA	64nC @ 10V	3515pF @ 20V	±20V	-	118W (Tc)	6.7 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6N50TM	Fairchild/ON Semiconductor	MOSFET N-CH 500V 6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione534.528	MOSFET (Metal Oxide)	500V	6A (Tc)	10V	5V @ 250µA	16.6nC @ 10V	9400pF @ 25V	±30V	-	89W (Tc)	900 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD4685_F085	Fairchild/ON Semiconductor	MOSFET P-CH 40V 32A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione3.392	MOSFET (Metal Oxide)	40V	8.4A (Ta), 32A (Tc)	4.5V, 10V	3V @ 250µA	27nC @ 5V	2380pF @ 20V	±20V	-	83W (Tc)	27 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD13AN06A0_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione3.488	MOSFET (Metal Oxide)	60V	9.9A (Ta), 50A (Tc)	6V, 10V	4V @ 250µA	29nC @ 10V	1350pF @ 25V	±20V	-	115W (Tc)	13.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDB8132_F085	Fairchild/ON Semiconductor	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 13V Input Capacitance (Ciss) (Max) @ Vds: 14100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 341W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione3.232	MOSFET (Metal Oxide)	30V	80A (Tc)	10V	4V @ 250µA	350nC @ 13V	14100pF @ 15V	±20V	-	341W (Tc)	1.6 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AB	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDFMA2P853T	Fairchild/ON Semiconductor	MOSFET P-CH 20V 3A 6-MICROFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MicroFET 2x2 Thin Package / Case: 6-UDFN Exposed Pad	pacchetto: 6-UDFN Exposed Pad	Azione2.800	MOSFET (Metal Oxide)	20V	3A (Ta)	1.8V, 4.5V	1.3V @ 250µA	6nC @ 4.5V	435pF @ 10V	±8V	Schottky Diode (Isolated)	1.4W (Ta)	120 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	MicroFET 2x2 Thin	6-UDFN Exposed Pad
FDP5500	Fairchild/ON Semiconductor	MOSFET N-CH 55V 80A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 269nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3565pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	pacchetto: TO-220-3	Azione6.012	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	269nC @ 20V	3565pF @ 25V	±20V	-	375W (Tc)	7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3