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Prodotti Cree/Wolfspeed

Record 243
Pagina  6/9
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
CMF20120D
Cree/Wolfspeed

MOSFET N-CH 1200V 42A TO-247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V
  • Vgs (Max): +25V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 215W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 135°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione7.632
C2M1000170J-TR
Cree/Wolfspeed

MOSFET N-CH 1700V 5.3A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
pacchetto: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Azione7.968
C2M0080120D
Cree/Wolfspeed

MOSFET N-CH 1200V 31.6A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione7.104
C2M1000170D
Cree/Wolfspeed

MOSFET N-CH 1700V 4.9A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 191pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione2.608
C2M0160120D
Cree/Wolfspeed

MOSFET N-CH 1200V 19A TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 800V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 196 mOhm @ 10A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione25.188
C2M1000170J
Cree/Wolfspeed

MOSFET N-CH 1700V 5.3A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7 (Straight Leads)
pacchetto: TO-263-7 (Straight Leads)
Azione22.206
CRF24060FE
Cree/Wolfspeed

FET RF 120V 1.1GHZ 440193

  • Transistor Type: Silicon Carbide MESFET
  • Frequency: 1.1GHz
  • Gain: 13dB
  • Voltage - Test: 48V
  • Current Rating: 9A
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 60W
  • Voltage - Rated: 120V
  • Package / Case: 440193
  • Supplier Device Package: 440193
pacchetto: 440193
Azione3.360
CGHV50200F
Cree/Wolfspeed

200-W 4400-5000-MHZ 50-OHM I

  • Transistor Type: HEMT
  • Frequency: 5GHz
  • Gain: 11.8dB
  • Voltage - Test: 40V
  • Current Rating: 17A
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 200W
  • Voltage - Rated: 125V
  • Package / Case: 440217
  • Supplier Device Package: 440217
pacchetto: 440217
Azione4.144
CGHV60170D
Cree/Wolfspeed

RF MOSFET HEMT 50V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 260mA
  • Power - Output: 170W
  • Voltage - Rated: 150V
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione5.456
CGHV14500F
Cree/Wolfspeed

FET RF 125V 1.4GHZ 440117

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: 36A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 500W
  • Voltage - Rated: 125V
  • Package / Case: 440117
  • Supplier Device Package: 440117
pacchetto: 440117
Azione7.424
CGHV96050F2
Cree/Wolfspeed

FET RF 100V 9.6GHZ 440210

  • Transistor Type: HEMT
  • Frequency: 7.9GHz ~ 9.6GHz
  • Gain: 10dB
  • Voltage - Test: 40V
  • Current Rating: 6A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 70W
  • Voltage - Rated: 100V
  • Package / Case: 440210
  • Supplier Device Package: 440210
pacchetto: 440210
Azione5.840
CGHV14250F
Cree/Wolfspeed

FET RF 125V 1.4GHZ 440162

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 18dB
  • Voltage - Test: 50V
  • Current Rating: 42mA
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 330W
  • Voltage - Rated: 125V
  • Package / Case: 440162
  • Supplier Device Package: 440162
pacchetto: 440162
Azione5.872
CGH40120F
Cree/Wolfspeed

FET RF 84V 4GHZ 440193

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 4GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 28A
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 120W
  • Voltage - Rated: 84V
  • Package / Case: 440193
  • Supplier Device Package: 440193
pacchetto: 440193
Azione13.956
CGHV1J025D-GP4
Cree/Wolfspeed

RF MOSFET HEMT 40V DIE

  • Transistor Type: HEMT
  • Frequency: 18GHz
  • Gain: 17dB
  • Voltage - Test: 40V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 120mA
  • Power - Output: 25W
  • Voltage - Rated: 100V
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione6.216
CAS300M17BM2
Cree/Wolfspeed

MOSFET 2N-CH 1700V 325A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 325A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 225A, 20V
  • Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
  • Power - Max: 1760W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: Module
Azione7.936
C3D03065E-TR
Cree/Wolfspeed

DIODE SCHOTTKY 650V 11.5A TO252

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 11.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 650V
  • Capacitance @ Vr, F: 155pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione2.144
hot C3D02060E-TR
Cree/Wolfspeed

DIODE SCHOTTKY 600V 8A TO252-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 11pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione65.784
C4D05120A
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 8.2A TO220

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 8.2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 150µA @ 1200V
  • Capacitance @ Vr, F: 390pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione6.576
CSD01060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 2.2A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 80pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione42.720
C4D30120D
Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V 21.5A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 21.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacchetto: TO-247-3
Azione3.712
C4D15120D
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 24.5A TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 24.5V (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacchetto: TO-247-3
Azione11.736
CGHV27060MP-TB
Cree/Wolfspeed

TEST FIXTURE FOR CGHV27060MP

  • Type: HEMT
  • Frequency: 0Hz ~ 2.7GHz
  • For Use With/Related Products: CGHV27060
  • Supplied Contents: Partially Populated Board - Main IC Not Included
pacchetto: -
Azione3.078
CGH40035F-TB
Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40035

  • Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • For Use With/Related Products: CGH40035F
  • Supplied Contents: Partially Populated Board - Main IC Not Included
pacchetto: -
Azione6.912
hot CMPA5585025F-TB
Cree/Wolfspeed

EVAL BOARD FOR CMPA5585025F

  • Type: Amplifier
  • Frequency: 5.5GHz ~ 8.5GHz
  • For Use With/Related Products: CMPA5585025F
  • Supplied Contents: Partially Populated Board - Main IC Not Included
pacchetto: -
Azione5.742
CGH55030F-TB
Cree/Wolfspeed

RF EVAL HEMT AMPLIFIER

  • Type: Amplifier
  • Frequency: 4.5GHz ~ 6GHz
  • For Use With/Related Products: CGH55030
  • Supplied Contents: Partially Populated Board - Main IC Not Included
pacchetto: -
Azione6.804
CGHV14250F-TB
Cree/Wolfspeed

TEST FIXTURE FOR CGHV14250

  • Type: FET
  • Frequency: 1.2GHz ~ 1.4GHz
  • For Use With/Related Products: CGHV14250
  • Supplied Contents: Partially Populated Board - Main IC Not Included
pacchetto: -
Azione4.050
CMPA801B025F-TB
Cree/Wolfspeed

IC AMP GAN HEMT MMIC 440208

  • Frequency: 8.5GHz ~ 11GHz
  • P1dB: -
  • Gain: 15.8dB
  • Noise Figure: -
  • RF Type: -
  • Voltage - Supply: 28V
  • Current - Supply: -
  • Test Frequency: -
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: Module
Azione5.166
CMPA801B025F
Cree/Wolfspeed

IC AMP GAN HEMT MMIC 440208

  • Frequency: 8.5GHz ~ 11GHz
  • P1dB: -
  • Gain: 24dB
  • Noise Figure: -
  • RF Type: -
  • Voltage - Supply: -
  • Current - Supply: -
  • Test Frequency: -
  • Package / Case: 440208
  • Supplier Device Package: 440208
pacchetto: 440208
Azione7.596