Pagina 3 - Prodotti Broadcom Limited - Transistor - Bipolari (BJT) - RF

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AT-64000-GP4	Broadcom Limited	TRANSISTOR NPN BIPOLAR CHIP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: -	pacchetto: Die	Azione3.344	20V	-	-	-	3W	20 @ 110mA, 8V	200mA	200°C (TJ)	Surface Mount	Die	-
AT-42000-GP4	Broadcom Limited	TRANSISTOR NPN BIPOLAR CHIP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz Gain: 10.5dB ~ 14dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Chip	pacchetto: Die	Azione6.048	12V	9GHz	1.9dB ~ 3dB @ 2GHz ~ 4GHz	10.5dB ~ 14dB	600mW	30 @ 35mA, 8V	80mA	200°C (TJ)	Surface Mount	Die	Chip
AT-41535G	Broadcom Limited	TRANSISTOR NPN BIPOLAR 35MICRO-X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 4GHz Gain: 10dB ~ 18dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (35 micro-X) Supplier Device Package: 35 micro-X	pacchetto: 4-SMD (35 micro-X)	Azione5.488	12V	8GHz	1.3dB ~ 3dB @ 1GHz ~ 4GHz	10dB ~ 18dB	500mW	30 @ 10mA, 8V	60mA	150°C (TJ)	Surface Mount	4-SMD (35 micro-X)	35 micro-X
AT-41500-GP4	Broadcom Limited	IC TRANS NPN GP BIPOLAR 86PP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz Gain: 8dB ~ 17dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacchetto: Die	Azione4.624	12V	8GHz	1.4dB ~ 3dB @ 1GHz ~ 4GHz	8dB ~ 17dB	500mW	30 @ 10mA, 8V	60mA	200°C (TJ)	Surface Mount	Die	Die
AT-42086-TR1G	Broadcom Limited	TRANS NPN BIPO 12V 80MA 86-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz Gain: 9dB ~ 13dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	pacchetto: SOT-86	Azione208.332	12V	8GHz	1.9dB ~ 3.5dB @ 2GHz ~ 4GHz	9dB ~ 13dB	500mW	30 @ 35mA, 8V	80mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
AT-41586-TR1G	Broadcom Limited	TRANS NPN BIPO 12V 60MA 86-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz Gain: 8dB ~ 17dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	pacchetto: SOT-86	Azione278.376	12V	8GHz	1.4dB ~ 3dB @ 1GHz ~ 4GHz	8dB ~ 17dB	500mW	30 @ 10mA, 8V	60mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
AT-42036-TR1G	Broadcom Limited	TRANS NPN BIPO 12V 80MA 36-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz Gain: 10dB ~ 13.5dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (36 micro-X) Supplier Device Package: 36 micro-X	pacchetto: 4-SMD (36 micro-X)	Azione5.968	12V	8GHz	2dB ~ 3dB @ 2GHz ~ 4GHz	10dB ~ 13.5dB	600mW	30 @ 35mA, 8V	80mA	150°C (TJ)	Surface Mount	4-SMD (36 micro-X)	36 micro-X