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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH DFN
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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pacchetto: - |
Azione7.792 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 85A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.176 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 10A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3x3)
- Package / Case: 8-PowerSMD, Flat Leads
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pacchetto: 8-PowerSMD, Flat Leads |
Azione334.584 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 1.3A TO251A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 9 Ohm @ 650mA, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251A
- Package / Case: TO-251-3 Stub Leads, IPak
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pacchetto: TO-251-3 Stub Leads, IPak |
Azione4.800 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 6.3A 6DFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 746pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta)
- Rds On (Max) @ Id, Vgs: 37.5 mOhm @ 6.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DFN-EP (2x2)
- Package / Case: 6-UDFN Exposed Pad
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pacchetto: 6-UDFN Exposed Pad |
Azione16.800 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V 4.5A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 115W (Tc)
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione26.760 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 85A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 268W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione145.440 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 49A 8ULTRASO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UltraSO-8?
- Package / Case: 3-PowerSMD, Flat Leads
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pacchetto: 3-PowerSMD, Flat Leads |
Azione276.312 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 50A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione189.984 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 29A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1312pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 14.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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pacchetto: TO-247-3 |
Azione3.520 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 5A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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pacchetto: TO-220-3 Full Pack |
Azione20.856 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 250V 1.5A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
- Rds On (Max) @ Id, Vgs: 560 mOhm @ 1.5A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3x3)
- Package / Case: 8-PowerSMD, Flat Leads
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pacchetto: 8-PowerSMD, Flat Leads |
Azione3.168 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 8A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione11.179.656 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 18A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5650pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 268W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione31.668 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 80V 78A 8-DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2162pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 7.4W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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pacchetto: 8-PowerSMD, Flat Leads |
Azione24.102 |
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Alpha & Omega Semiconductor Inc. |
IC REGULATOR BUCK SOIC
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 18V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 18V
- Current - Output: 6A
- Frequency - Switching: 450kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SO Exposed Pad
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pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione3.456 |
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Alpha & Omega Semiconductor Inc. |
IC REGULATOR BUCK SOIC
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 18V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 18V
- Current - Output: 4A
- Frequency - Switching: 500kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SO Exposed Pad
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pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione2.336 |
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Alpha & Omega Semiconductor Inc. |
IC REG BUCK ADJ 3A 8SOIC
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 16V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 16V
- Current - Output: 3A
- Frequency - Switching: 340kHz
- Synchronous Rectifier: No
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione13.836 |
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Alpha & Omega Semiconductor Inc. |
IC LOAD SW HI SIDE P-CH 4DFN
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 1.6 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2A
- Rds On (Typ): 60 mOhm
- Input Type: Non-Inverting
- Features: Load Discharge, Slew Rate Controlled
- Fault Protection: -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Package / Case: 4-UFDFN Exposed Pad
- Supplier Device Package: 4-DFN-EP (1.2x1.6)
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pacchetto: 4-UFDFN Exposed Pad |
Azione4.208 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 9A/22A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 22A (Tc)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
- Power - Max: 3.1W (Ta), 17W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerSMD, Flat Leads
- Supplier Device Package: 8-DFN (3x3)
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pacchetto: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 7.3A 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 7.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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pacchetto: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 40A/140A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5970 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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pacchetto: - |
Azione5.016 |
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Alpha & Omega Semiconductor Inc. |
POWER IC DRMOS
- Type: MOSFET
- Configuration: 1 Phase
- Current: 50 A
- Voltage: -
- Voltage - Isolation: -
- Package / Case: 31-PowerVFQFN Module
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pacchetto: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 3.5A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: 3-SMD, SOT-23-3 Variant
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pacchetto: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
- Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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pacchetto: - |
Azione8.700 |
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Alpha & Omega Semiconductor Inc. |
GAN
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 16A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Vgs(th) (Max) @ Id: 2.3V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds: 203 pF @ 400 V
- Vgs (Max): 6V
- FET Feature: -
- Power Dissipation (Max): 125W
- Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 6V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (8x8)
- Package / Case: 8-PowerTDFN
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pacchetto: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
20V/70A 5X6 SMART POWER STAGE WI
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters
- Interface: PWM
- Load Type: Inductive, Capacitive
- Technology: DrMOS
- Rds On (Typ): -
- Current - Output / Channel: 70A
- Current - Peak Output: 150A
- Voltage - Supply: 3V ~ 20V
- Voltage - Load: 3V ~ 20V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Features: Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
- Mounting Type: Surface Mount
- Package / Case: 39-PowerWFQFN Module
- Supplier Device Package: 39-QFN (5x6)
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 9.5A/105A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
- Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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