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Prodotti Alpha & Omega Semiconductor Inc.

Record 2.091
Pagina  24/75
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
AOK20B135E1
Alpha & Omega Semiconductor Inc.

IGBT 1350V 20A 340W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A
  • Power - Max: 250W
  • Switching Energy: 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 58nC
  • Td (on/off) @ 25°C: -/134ns
  • Test Condition: 600V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: TO-247-3
Azione6.264
AOTF12T60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 12A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1954pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione6.080
AOWF11C60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO-262F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262F
  • Package / Case: TO-262-3 Full Pack, I2Pak
pacchetto: TO-262-3 Full Pack, I2Pak
Azione6.480
AOTF10N90
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 900V 10A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 980 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione3.584
hot AON7514
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 20A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 951pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 23W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (3x3)
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: 8-PowerSMD, Flat Leads
Azione4.158.300
hot AOT25S65L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 25A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1278pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione6.912
AOT280L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 20.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11135pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione4.576
hot AOT22N50L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 22A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione13.860
AON6144
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 100A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3780pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-VDFN Exposed Pad
pacchetto: 8-VDFN Exposed Pad
Azione7.600
hot AON2405
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 8A 6DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN-EP (2x2)
  • Package / Case: 6-UDFN Exposed Pad
pacchetto: 6-UDFN Exposed Pad
Azione180.180
hot AOT4N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 4A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione30.900
AO4818BL_101
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.584
hot AON6934A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 22A/30A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A, 30A
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V
  • Power - Max: 3.6W, 4.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (5x6)
pacchetto: 8-PowerVDFN
Azione732.852
hot AO6601
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 6-TSOP

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.3A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
pacchetto: SC-74, SOT-457
Azione11.386.968
AON7804
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9A 8DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSMD, Flat Leads
  • Supplier Device Package: 8-DFN (3x3)
pacchetto: 8-PowerSMD, Flat Leads
Azione1.848.270
hot AOZ1236QI-02
Alpha & Omega Semiconductor Inc.

IC REG BUCK ADJ 6A SYNC QFN

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 2.7V
  • Voltage - Input (Max): 24V
  • Voltage - Output (Min/Fixed): 0.8V
  • Voltage - Output (Max): 20.4V
  • Current - Output: 6A
  • Frequency - Switching: 200kHz ~ 1MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 23-VFQFN Exposed Pad
  • Supplier Device Package: 23-QFN (4x4)
pacchetto: 23-VFQFN Exposed Pad
Azione2.000
AOZ9256DI
Alpha & Omega Semiconductor Inc.

IC BATT PROTECTION LI-ION 6DFN

  • Function: Battery Protection
  • Battery Chemistry: Lithium-Ion/Polymer
  • Number of Cells: 1
  • Fault Protection: Over Current
  • Interface: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-DFN-EP (2x4)
pacchetto: 6-WFDFN Exposed Pad
Azione4.960
hot AOZ8005FI
Alpha & Omega Semiconductor Inc.

TVS DIODE 5VWM 16VC 10MSOP

  • Type: Steering (Rail to Rail)
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5V
  • Voltage - Breakdown (Min): 6.6V
  • Voltage - Clamping (Max) @ Ipp: 16V
  • Current - Peak Pulse (10/1000µs): 12A (100ns)
  • Power - Peak Pulse: -
  • Power Line Protection: Yes
  • Applications: Ethernet, HDMI
  • Capacitance @ Frequency: 1pF @ 1MHz
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 10-MSOP
pacchetto: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Azione15.336
AOZ8915CI-05
Alpha & Omega Semiconductor Inc.

TVS DIODE

  • Type: -
  • Unidirectional Channels: -
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): -
  • Voltage - Breakdown (Min): -
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: -
  • Applications: -
  • Capacitance @ Frequency: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione8.352
AOZ8831DT-24
Alpha & Omega Semiconductor Inc.

TVS DIODE 24VWM 48VC

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 24V (Max)
  • Voltage - Breakdown (Min): 26V
  • Voltage - Clamping (Max) @ Ipp: 48V
  • Current - Peak Pulse (10/1000µs): 1.2A (8/20µs)
  • Power - Peak Pulse: 60W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 0.35pF @ 1MHz
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 0402 (1006 Metric)
  • Supplier Device Package: 2-DFN (1x0.6)
pacchetto: 0402 (1006 Metric)
Azione4.140
AOZ2368QI-11
Alpha & Omega Semiconductor Inc.

POWER IC EZBUCK

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 4.5V
  • Voltage - Input (Max): 24V
  • Voltage - Output (Min/Fixed): 0.6V
  • Voltage - Output (Max): 20.4V
  • Current - Output: 25A
  • Frequency - Switching: 1MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-PowerTFQFN
  • Supplier Device Package: 28-QFN (5x5)
pacchetto: 28-PowerTFQFN
Azione27.060
AOB30B65LN2V
Alpha & Omega Semiconductor Inc.

LINEAR IC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
  • Power - Max: 227 W
  • Switching Energy: 880µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 52 nC
  • Td (on/off) @ 25°C: 23ns/109ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 312 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
pacchetto: -
Request a Quote
AONS32314
Alpha & Omega Semiconductor Inc.

N

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: -
Request a Quote
AOCA24108E
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 14A 6ALPHADFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-AlphaDFN (1.79x1.18)
pacchetto: -
Request a Quote
AOZ1237QI-01_4
Alpha & Omega Semiconductor Inc.

IC REG BUCK ADJUSTABLE 8A 23QFN

  • Function: -
  • Output Configuration: -
  • Topology: -
  • Output Type: -
  • Number of Outputs: -
  • Voltage - Input (Min): -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Current - Output: -
  • Frequency - Switching: -
  • Synchronous Rectifier: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
AONS66612
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 46A/100A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: -
Azione16.848
AON6946_2C1
Alpha & Omega Semiconductor Inc.

MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
AOTF14N50L
Alpha & Omega Semiconductor Inc.

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
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