Prodotti Vishay Siliconix

2N4338-2

Vishay Siliconix

MOSFET N-CH 50V 600UA TO-206AA

• FET Type: N-Channel
• Voltage - Breakdown (V(BR)GSS): 50V
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
• Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
• Resistance - RDS(On): -
• Power - Max: 300mW
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Supplier Device Package: TO-206AA (TO-18)

pacchetto: TO-206AA, TO-18-3 Metal Can

SIR482DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 35A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1575pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
• Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

pacchetto: PowerPAK? SO-8

SI4636DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 17A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2635pF @ 15V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 4.4W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: 8-SOIC (0.154", 3.90mm Width)

SI1037X-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 0.77A SC89

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 170mW (Ta)
• Rds On (Max) @ Id, Vgs: 195 mOhm @ 770mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-89 (SOT-563F)
• Package / Case: SOT-563, SOT-666

pacchetto: SOT-563, SOT-666

IRFL214TR

Vishay Siliconix

MOSFET N-CH 250V 790MA SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
• Rds On (Max) @ Id, Vgs: 2 Ohm @ 470mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

pacchetto: TO-261-4, TO-261AA

IRFI9520N

Vishay Siliconix

MOSFET P-CH 100V 5.5A TO220FP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

pacchetto: TO-220-3 Full Pack, Isolated Tab

IRF9530STRR

Vishay Siliconix

MOSFET P-CH 100V 12A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF740S

Vishay Siliconix

MOSFET N-CH 400V 10A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFZ48RPBF

Vishay Siliconix

MOSFET N-CH 60V 50A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

SQD15N06-42L_GE3

Vishay Siliconix

MOSFET N-CH 60V 15A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

SIHB21N65EF-GE3

Vishay Siliconix

MOSFET N-CH 650V 21A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI7940DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 12V 7.6A PPAK SO-8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 7.6A
• Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1.4W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? SO-8 Dual
• Supplier Device Package: PowerPAK? SO-8 Dual

pacchetto: PowerPAK? SO-8 Dual

SI1029X-T1-E3

Vishay Siliconix

MOSFET N/P-CH 60V SOT563F

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
• Power - Max: 250mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SC-89-6

pacchetto: SOT-563, SOT-666

SIC789ACD-T1-GE3

Vishay Siliconix

IC BUCK ADJ 60A MLP66-40L

• Output Configuration: Half Bridge
• Applications: Synchronous Buck Converters
• Interface: PWM
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): -
• Current - Output / Channel: 60A
• Current - Peak Output: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 4.5 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit, Diode Emulation, Status Flag
• Fault Protection: Shoot-Through, UVLO
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? MLP66-40
• Supplier Device Package: PowerPAK? MLP66-40

pacchetto: PowerPAK? MLP66-40

SI9730ABY-T1-E3

Vishay Siliconix

IC CONTROLLR LI-ION 4.2V 8SOIC

• Function: Multi-Function Controller
• Battery Chemistry: Lithium-Ion
• Number of Cells: 2
• Fault Protection: Over Current, Under Voltage
• Interface: -
• Operating Temperature: -25°C ~ 85°C (TA)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

DG413LDY-T1

Vishay Siliconix

IC SWITCH QUAD SPST LV 16-SOIC

• Switch Circuit: SPST - NO/NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 17 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 2.7 V ~ 12 V
• Voltage - Supply, Dual (V±): ±3 V ~ 6 V
• Switch Time (Ton, Toff) (Max): 19ns, 12ns
• -3db Bandwidth: 280MHz
• Charge Injection: 5pC
• Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -95dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

pacchetto: 16-SOIC (0.154", 3.90mm Width)

DG200ABK

Vishay Siliconix

IC SWITCH DUAL SPST 14CDIP

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 2
• On-State Resistance (Max): 70 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): ±15V
• Switch Time (Ton, Toff) (Max): 440ns, 340ns
• -3db Bandwidth: -
• Charge Injection: -10pC
• Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
• Current - Leakage (IS(off)) (Max): 2nA
• Crosstalk: -90dB @ 1MHz
• Operating Temperature: -55°C ~ 125°C (TA)
• Package / Case: 14-CDIP (0.300", 7.62mm)
• Supplier Device Package: 14-CERDIP

pacchetto: 14-CDIP (0.300", 7.62mm)

DG417LDY-E3

Vishay Siliconix

IC ANALOG SWITCH SPST 8SOIC

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 20 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 2.7 V ~ 12 V
• Voltage - Supply, Dual (V±): ±3 V ~ 6 V
• Switch Time (Ton, Toff) (Max): 43ns, 31ns
• -3db Bandwidth: -
• Charge Injection: 1pC
• Channel Capacitance (CS(off), CD(off)): 5pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -71dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

DG2592DN1-T1-GE4

Vishay Siliconix

IC AUDIO JACK DETECTOR MINIQFN

• Applications: Audio
• Multiplexer/Demultiplexer Circuit: -
• Switch Circuit: -
• Number of Channels: 1
• On-State Resistance (Max): -
• Voltage - Supply, Single (V+): 1.6 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: -
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 10-UFQFN
• Supplier Device Package: 10-UTMQFN

pacchetto: 10-UFQFN

DG611EEY-T1-GE4

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 115 Ohm
• Channel-to-Channel Matching (ΔRon): 600 mOhm
• Voltage - Supply, Single (V+): 3 V ~ 12 V
• Voltage - Supply, Dual (V±): ±3 V ~ 5 V
• Switch Time (Ton, Toff) (Max): 50ns, 35ns
• -3db Bandwidth: 1GHz
• Charge Injection: 1.4pC
• Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
• Current - Leakage (IS(off)) (Max): 100pA
• Crosstalk: -74dB @ 10MHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

pacchetto: 16-SOIC (0.154", 3.90mm Width)

SIC463ED-T1-GE3

Vishay Siliconix

IC REG BUCK ADJ 4A SYNC MLP27-55

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 60V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 55.2V
• Current - Output: 4A
• Frequency - Switching: 100kHz ~ 2MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® MLP55-27
• Supplier Device Package: PowerPAK® MLP55-27

pacchetto: PowerPAK® MLP55-27

SIHP22N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 21A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 227W (Tc)
• Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: -
• Package / Case: TO-220-3

pacchetto: -

Request a Quote

SIHB28N60EF-T5-GE3

Vishay Siliconix

N-CHANNEL 600V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

SQD40081EL_GE3

Vishay Siliconix

MOSFET P-CH 40V 50A TO252AA

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 71W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

SIHB6N80E-GE3

Vishay Siliconix

MOSFET N-CH 800V 5.4A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 78W (Tc)
• Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Request a Quote

SI7155DP-T1-GE3

Vishay Siliconix

MOSFET P-CH 40V 31A/100A PPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
• Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

pacchetto: -

SIHA2N80E-GE3

Vishay Siliconix

MOSFET N-CH 800V 2.8A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 29W (Tc)
• Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Full Pack
• Package / Case: TO-220-3 Full Pack

pacchetto: -

SQM40014EM_GE3

Vishay Siliconix

MOSFET N-CH 40V 200A TO263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 15525 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 1mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7
• Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

pacchetto: -

Request a Quote