Pagina 171 - Prodotti Vishay Siliconix | Heisener Electronics
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Prodotti Vishay Siliconix

Record 5.544
Pagina  171/198
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
U440
Vishay Siliconix

JFET DUAL P-CH 25V TO-71

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-71-6
  • Supplier Device Package: -
pacchetto: TO-71-6
Azione5.824
SI5481DU-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 12A PPAK CHIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? ChipFet Single
  • Package / Case: PowerPAK? ChipFET? Single
pacchetto: PowerPAK? ChipFET? Single
Azione6.992
hot SI5447DC-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 3.5A 1206-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 76 mOhm @ 3.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione14.256
SI4110DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 17.3A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2205pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 7.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.264
hot SI1039X-T1-E3
Vishay Siliconix

MOSFET P-CH 12V 0.87A SOT563F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 170mW (Ta)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 870mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione247.464
IRFBF30S
Vishay Siliconix

MOSFET N-CH 900V 3.6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione4.432
IRFR224TR
Vishay Siliconix

MOSFET N-CH 250V 3.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione4.032
SUG90090E-GE3
Vishay Siliconix

MOSFET N-CH 200V 100A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 395W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione4.224
IRFD9220PBF
Vishay Siliconix

MOSFET P-CH 200V 0.56A 4-DIP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 560mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 340mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-DIP, Hexdip, HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
pacchetto: 4-DIP (0.300", 7.62mm)
Azione17.172
hot SI7115DN-T1-E3
Vishay Siliconix

MOSFET P-CH 150V 8.9A 1212-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 295 mOhm @ 4A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
pacchetto: PowerPAK? 1212-8
Azione104.400
SQ9407EY-T1_GE3
Vishay Siliconix

MOSFET P-CH 60V 4.6A 8SO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.432
IRFIB5N65APBF
Vishay Siliconix

MOSFET N-CH 650V 5.1A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1417pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacchetto: TO-220-3 Full Pack, Isolated Tab
Azione21.456
hot SI9945AEY-T1
Vishay Siliconix

MOSFET 2N-CH 60V 3.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione16.668
hot SI7214DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 4.6A 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
pacchetto: PowerPAK? 1212-8 Dual
Azione401.940
hot SI4931DY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 6.7A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.696
SI9185DMP-18-T1-E3
Vishay Siliconix

IC REG LINEAR 1.8V 500MA MLP33-8

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 1.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.825V @ 500mA
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 1.5mA ~ 4mA
  • PSRR: 60dB ~ 40dB (1kHz ~ 100kHz)
  • Control Features: Enable, Power On Reset
  • Protection Features: Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? MLP33-8
  • Supplier Device Package: PowerPAK? MLP33-8
pacchetto: PowerPAK? MLP33-8
Azione7.232
SIP43102DLP-T1-E3
Vishay Siliconix

IC DUAL POWER SWITCH 44MLP

  • Switch Type: General Purpose
  • Number of Outputs: 2
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side or Low Side
  • Output Type: Bipolar
  • Interface: On/Off
  • Voltage - Load: 9 V ~ 32 V
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): 200mA
  • Rds On (Typ): -
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: PowerPAK? MLP44-16
  • Supplier Device Package: PowerPAK? MLP44-16
pacchetto: PowerPAK? MLP44-16
Azione4.496
DG409LDY-E3
Vishay Siliconix

IC MUX CMOS ANG DUAL 8CH 16SOIC

  • Switch Circuit: SP4T
  • Multiplexer/Demultiplexer Circuit: 4:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 29 Ohm
  • Channel-to-Channel Matching (ΔRon): 1 Ohm
  • Voltage - Supply, Single (V+): 2 V ~ 12 V
  • Voltage - Supply, Dual (V±): ±3 V ~ 6 V
  • Switch Time (Ton, Toff) (Max): 55ns, 25ns
  • -3db Bandwidth: -
  • Charge Injection: 1pC
  • Channel Capacitance (CS(off), CD(off)): 7pF, 20pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -82dB @ 100kHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione3.616
DG9421DV-T1-E3
Vishay Siliconix

IC SWITCH SGL 5V ON/OFF 6-TSOP

  • Switch Circuit: SPST - NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 3 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 2.7 V ~ 12 V
  • Voltage - Supply, Dual (V±): ±2.7 V ~ 6 V
  • Switch Time (Ton, Toff) (Max): 45ns, 47ns
  • -3db Bandwidth: -
  • Charge Injection: 43pC
  • Channel Capacitance (CS(off), CD(off)): 31pF, 30pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione2.208
DG441DY-E3
Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

  • Switch Circuit: SPST - NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 85 Ohm
  • Channel-to-Channel Matching (ΔRon): 4 Ohm (Max)
  • Voltage - Supply, Single (V+): 12V
  • Voltage - Supply, Dual (V±): ±15V
  • Switch Time (Ton, Toff) (Max): 220ns, 120ns
  • -3db Bandwidth: -
  • Charge Injection: -1pC
  • Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -100dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione6.672
hot DG534ADJ
Vishay Siliconix

IC AMP/VIDEO/MUX LP 4/8CH 20DIP

  • Applications: Ultrasound, Video
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Switch Circuit: SPDT
  • Number of Channels: 2
  • On-State Resistance (Max): 90 Ohm
  • Voltage - Supply, Single (V+): 10 V ~ 21 V
  • Voltage - Supply, Dual (V±): -
  • -3db Bandwidth: 500MHz
  • Features: T-Switch Configuration
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 20-DIP (0.300", 7.62mm)
  • Supplier Device Package: 20-PDIP
pacchetto: 20-DIP (0.300", 7.62mm)
Azione5.552
DG613EEN-T1-GE4
Vishay Siliconix

IC ANALOG SWITCH 16MINIQFN

  • Switch Circuit: SPST - NO/NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 115 Ohm
  • Channel-to-Channel Matching (ΔRon): 2.5 Ohm
  • Voltage - Supply, Single (V+): 3 V ~ 12 V
  • Voltage - Supply, Dual (V±): ±3 V ~ 5 V
  • Switch Time (Ton, Toff) (Max): 50ns, 35ns
  • -3db Bandwidth: 1GHz
  • Charge Injection: 1.4pC
  • Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
  • Current - Leakage (IS(off)) (Max): 100pA
  • Crosstalk: -74dB @ 10MHz
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Package / Case: 16-UFQFN
  • Supplier Device Package: 16-miniQFN (1.8x2.6)
pacchetto: 16-UFQFN
Azione21.780
IRF9520PBF-BE3
Vishay Siliconix

MOSFET P-CH 100V 6.8A TO220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
Azione2.313
SQJ459EP-T2_BE3
Vishay Siliconix

P-CHANNEL 60-V (D-S) 175C MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
pacchetto: -
Azione37.113
SQ4282EY-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2367pF @ 15V
  • Power - Max: 3.9W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Azione7.488
SIHF840LCS-GE3
Vishay Siliconix

MOSFET N-CH 500V 8A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
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SQJ459EP-T1_BE3
Vishay Siliconix

P-CHANNEL 60-V (D-S) 175C MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
pacchetto: -
Azione8.802
SISS22DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 25A/90.6A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
pacchetto: -
Azione17.991