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Prodotti Toshiba Semiconductor and Storage

Record 4.549
Pagina  93/163
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
2SJ668(TE16L1,NQ)
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PW-MOLD
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.096
SSM3K17SU,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 50V 100MA USM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 4V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: USM
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione5.264
TK4P55DA(T6RSS-Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 550V 3.5A DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.45 Ohm @ 1.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.920
hot 2SJ360(TE12L,F)
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 1A SC-62

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 730 mOhm @ 500mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PW-MINI
  • Package / Case: TO-243AA
pacchetto: TO-243AA
Azione21.480
TPC8129,LQ(S
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 9A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
  • Vgs (Max): +20V, -25V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.568
2SC4604,T6F(J
Toshiba Semiconductor and Storage

TRANS NPN 3A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
pacchetto: TO-226-3, TO-92-3 Long Body
Azione5.040
2SD1407A-Y(F)
Toshiba Semiconductor and Storage

TRANS NPN 100V 5A TO220NIS

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
  • Power - Max: 30W
  • Frequency - Transition: 12MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacchetto: TO-220-3 Full Pack
Azione3.472
RN2110,LF(CB
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1W SSM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
pacchetto: SC-75, SOT-416
Azione4.960
2SC5095-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 13dB ~ 7dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
pacchetto: SC-70, SOT-323
Azione54.900
RN1908(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione2.352
RN4904,LF
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione52.494
RN4907FE,LF(CB
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
pacchetto: SOT-563, SOT-666
Azione75.426
TA48M03F(T6L1,SNQ)
Toshiba Semiconductor and Storage

IC REG LINEAR 3V 500MA PW-MOLD

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 29V
  • Voltage - Output (Min/Fixed): 3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.65V @ 500mA
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 1.4mA ~ 25mA
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.184
TB6617FNG(O,EL)
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16SSOP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 1A
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Voltage - Load: 4.5 V ~ 45 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-LSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-SSOP
pacchetto: 16-LSSOP (0.173", 4.40mm Width)
Azione47.280
74VHC574FT(BE)
Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20TSSOP

  • Function: Standard
  • Type: D-Type
  • Output Type: Tri-State, Non-Inverted
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Clock Frequency: 115MHz
  • Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Iq): 4µA
  • Input Capacitance: 4pF
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
pacchetto: 20-TSSOP (0.173", 4.40mm Width)
Azione6.656
TC74ACT245FTEL
Toshiba Semiconductor and Storage

IC TRANSCVR 8BIT N-INV 20TSSOP

  • Logic Type: Transceiver, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
pacchetto: 20-TSSOP (0.173", 4.40mm Width)
Azione3.680
74HC245D(BJ)
Toshiba Semiconductor and Storage

74HC CMOS LOGIC IC SERIES 20SOIC

  • Logic Type: Transceiver, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 7.8mA, 7.8mA
  • Voltage - Supply: 2 V ~ 6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
pacchetto: 20-SOIC (0.295", 7.50mm Width)
Azione17.220
TCS10DPU(TE85L,F)
Toshiba Semiconductor and Storage

MAGNETIC SWITCH OMNIPOLAR 5-UFV

  • Function: Omnipolar Switch
  • Technology: Hall Effect
  • Polarization: Either
  • Sensing Range: ±2.5mT Trip, ±0.3mT Release
  • Test Condition: 25°C
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Current - Supply (Max): 1.3mA
  • Current - Output (Max): 5mA
  • Output Type: Push-Pull
  • Features: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: 5-UFV
pacchetto: 6-SMD (5 Leads), Flat Lead
Azione7.074
TLP3125(F)
Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 200MA 8-SOP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 4 Ohm
  • Load Current: 200mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 400 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 8-SOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (2.54mm)
  • Relay Type: Relay
pacchetto: 8-SOP (0.173", 4.40mm Width)
Azione5.058
TLP3545(F)
Toshiba Semiconductor and Storage

PHOTOCOUPLER PHOTORELAY 6-DIP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 70 mOhm
  • Load Current: 3A
  • Voltage - Input: 1.33VDC
  • Voltage - Load: 0 ~ 60 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 6-DIP (0.300", 7.62mm)
  • Supplier Device Package: 6-DIP
  • Relay Type: Relay
pacchetto: 6-DIP (0.300", 7.62mm)
Azione12.228
6N138F
Toshiba Semiconductor and Storage

OPTOISO 2.5KV DARL W/BASE 8DIP

  • Number of Channels: 1
  • Voltage - Isolation: 2500Vrms
  • Current Transfer Ratio (Min): 300% @ 1.6mA
  • Current Transfer Ratio (Max): -
  • Turn On / Turn Off Time (Typ): 1µs, 4µs
  • Rise / Fall Time (Typ): -
  • Input Type: DC
  • Output Type: Darlington with Base
  • Voltage - Output (Max): 18V
  • Current - Output / Channel: 60mA
  • Voltage - Forward (Vf) (Typ): 1.65V
  • Current - DC Forward (If) (Max): 20mA
  • Vce Saturation (Max): -
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione17.364
TLP5751(D4-TP,E
Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRVR SO6L

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Common Mode Transient Immunity (Min): 35kV/µs
  • Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
  • Pulse Width Distortion (Max): 50ns
  • Rise / Fall Time (Typ): 15ns, 8ns
  • Current - Output High, Low: 1A, 1A
  • Current - Peak Output: 1A
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 15 V ~ 30 V
  • Operating Temperature: -40°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 6-SO
  • Approvals: CQC, CSA, cUL, UL, VDE
pacchetto: 6-SOIC (0.295", 7.50mm Width)
Azione16.974
CMS10I40A-TE12L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A M-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: 62pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: -
Azione9.000
RN1110-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
pacchetto: -
Azione18.000
TPCP8F01-TE85L-F-M
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • Transistor Type: PNP, N-Channel
  • Applications: Load Switch
  • Voltage - Rated: 20V
  • Current Rating: 3A
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8
pacchetto: -
Request a Quote
RN4982-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacchetto: -
Azione8.880
RN1112-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
pacchetto: -
Azione18.000
SSM6N357R-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.65A 6TSOPF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F
pacchetto: -
Azione20.688