Prodotti Toshiba Semiconductor and Storage

2SK2145-GR(TE85L,F

Toshiba Semiconductor and Storage

MOSFET 2N-CH JFET 50V SMV

• FET Type: 2 N-Channel (Dual)
• Voltage - Breakdown (V(BR)GSS): -
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
• Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
• Resistance - RDS(On): -
• Power - Max: 300mW
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

pacchetto: SC-74A, SOT-753

TPN5900CNH,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 150V 9A 8TSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 75V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta), 39W (Tc)
• Rds On (Max) @ Id, Vgs: 59 mOhm @ 4.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON Advance (3.3x3.3)
• Package / Case: 8-PowerVDFN

pacchetto: 8-PowerVDFN

TK6A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 6A TO220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

SSM6P35FE(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.1A ES6

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 100mA
• Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
• Power - Max: 150mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6 (1.6x1.6)

pacchetto: SOT-563, SOT-666

2SA1954-A(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PNP 12V 0.5A USM

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
• Power - Max: 100mW
• Frequency - Transition: 130MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

pacchetto: SC-70, SOT-323

RN2310(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

pacchetto: SC-70, SOT-323

RN2705JE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

pacchetto: SOT-553

RN4603(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.3W SM6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SM6

pacchetto: SC-74, SOT-457

RN4984(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100µA (ICBO)
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

RN4982,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100µA (ICBO)
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

TCK106AF,LF

Toshiba Semiconductor and Storage

IC POWER DIST LOAD SWITCH SMV

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.1 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1A
• Rds On (Typ): 63 mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SMV, SOT-25, SC-74A

pacchetto: SC-74A, SOT-753

TBD62083AFWG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 8CH 0.5A 18SOP

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 18-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 18-SOP

pacchetto: 18-SOIC (0.295", 7.50mm Width)

TB6641FTG,8,EL

Toshiba Semiconductor and Storage

IC DC MOTOR DRVR PAR 32VQFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel, PWM
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 1.5A
• Voltage - Supply: 10 V ~ 45 V
• Voltage - Load: 10 V ~ 45 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-VQFN (5x5)

pacchetto: 32-VFQFN Exposed Pad

74HC165D(BJ)

Toshiba Semiconductor and Storage

IC 8BIT SHIFT REGISTER 16SOIC

• Logic Type: Shift Register
• Output Type: Complementary
• Number of Elements: 1
• Number of Bits per Element: 8
• Function: Parallel or Serial to Serial
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

pacchetto: 16-SOIC (0.154", 3.90mm Width)

TC74AC86FN(F,M)

Toshiba Semiconductor and Storage

IC GATE XOR 4CH 2-INP 14-SOL

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.5 V ~ 1.65 V
• Logic Level - High: 1.5 V ~ 3.85 V
• Max Propagation Delay @ V, Max CL: 8.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOL
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

pacchetto: 14-SOIC (0.154", 3.90mm Width)

TC7SZ14F,LJ(CT

Toshiba Semiconductor and Storage

IC GATE L-MOS SMV

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: Schmitt Trigger
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: 0.2 V ~ 1.2 V
• Logic Level - High: 1.4 V ~ 3.6 V
• Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

pacchetto: SC-74A, SOT-753

DF2B12M2SC,L3F

Toshiba Semiconductor and Storage

TVS DIODE 8VWM 18VC SC2

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8V (Max)
• Voltage - Breakdown (Min): 10V
• Voltage - Clamping (Max) @ Ipp: 18V (Typ)
• Current - Peak Pulse (10/1000µs): 1A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 0.2pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: SC2

pacchetto: 2-SMD, No Lead

TC35661SBG-007,EL

Toshiba Semiconductor and Storage

IC RF TXRX BLUETOOTH 64-FBGA

• Type: TxRx Only
• RF Family/Standard: Bluetooth
• Protocol: Bluetooth v4.0
• Modulation: -
• Frequency: 2.4GHz
• Data Rate (Max): 2Mbps
• Power - Output: 2dBm
• Sensitivity: -90dBm
• Memory Size: -
• Serial Interfaces: I2C, I2S, SPI, UART
• GPIO: -
• Voltage - Supply: 1.8 V ~ 3.3 V
• Current - Receiving: 63mA
• Current - Transmitting: 63mA
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-FBGA

pacchetto: 64-FBGA

TLP3240(TP15,F)

Toshiba Semiconductor and Storage

PHOTORELAY 40V 4-SSOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 14 Ohm
• Load Current: 120mA
• Voltage - Input: 1.3VDC
• Voltage - Load: 0 ~ 40 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.165", 4.20mm)
• Supplier Device Package: 4-SSOP
• Relay Type: Relay

pacchetto: 4-SMD (0.165", 4.20mm)

TLP197D(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUTPUT 6-SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 8 Ohm
• Load Current: 200mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 200 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SOP (0.173", 4.40mm)
• Supplier Device Package: 6-SOP (2.54mm)
• Relay Type: Relay

pacchetto: 6-SOP (0.173", 4.40mm)

TLP371F

Toshiba Semiconductor and Storage

OPTOISO 5KV DARL W/BASE 6DIP

• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (Min): 1000% @ 1mA
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): 50µs, 15µs
• Rise / Fall Time (Typ): 40µs, 15µs
• Input Type: DC
• Output Type: Darlington with Base
• Voltage - Output (Max): 300V
• Current - Output / Channel: 150mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 60mA
• Vce Saturation (Max): 1.2V
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.300", 7.62mm)
• Supplier Device Package: 6-DIP

pacchetto: 6-DIP (0.300", 7.62mm)

TLP559(IGM,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV TRANS 8-DIP

• Number of Channels: 1
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): 25% @ 10mA
• Current Transfer Ratio (Max): 75% @ 10mA
• Turn On / Turn Off Time (Typ): 450ns, 450ns
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 20V
• Current - Output / Channel: 8mA
• Voltage - Forward (Vf) (Typ): 1.65V
• Current - DC Forward (If) (Max): 25mA
• Vce Saturation (Max): -
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

pacchetto: 8-DIP (0.300", 7.62mm)

TBD62064AFAG,EL

Toshiba Semiconductor and Storage

IC DRVR TRANS ARRAY 4-CH 24SSOP

• Switch Type: General Purpose
• Number of Outputs: 4
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.25A
• Rds On (Typ): 430 mOhm
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 24-SOP (0.236", 6.00mm Width)
• Supplier Device Package: 24-SSOP

pacchetto: 24-SOP (0.236", 6.00mm Width)

TCR2LE19,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT1.9V DROPOUT220MV

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

TCTH011BE-LF-CT

Toshiba Semiconductor and Storage

CMOS LINEAR IC OVER TEMP DETECTI

• Type: Thermal
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: -
• Reset Timeout: 214µs Typical
• Voltage - Threshold: 0.5V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

pacchetto: -

74LCX32FT

Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14TSSOPB

• Logic Type: OR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65V ~ 3.6V
• Current - Quiescent (Max): 10 µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.7V ~ 0.8V
• Logic Level - High: 1.7V ~ 2V
• Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOPB
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

pacchetto: -

TK090A65Z-S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 30A TO220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1.27mA
• Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

pacchetto: -

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2SK3798-STA4-Q-M

Toshiba Semiconductor and Storage

POWER MOSFET TRANSISTOR TO-220(S

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

pacchetto: -

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