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Prodotti Renesas Electronics America - Transistor - FET, MOSFET - Singoli

Record 341
Pagina  8/13
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
2SK4150TZ-E
Renesas Electronics America

MOSFET N-CH 250V 0.4A TO-92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5.7 Ohm @ 200mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione3.568
MOSFET (Metal Oxide)
250V
400mA (Ta)
2.5V, 4V
-
3.7nC @ 4V
80pF @ 25V
±10V
-
750mW (Ta)
5.7 Ohm @ 200mA, 4V
150°C (TJ)
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
2SK4093TZ-E
Renesas Electronics America

MOSFET N-CH 250V 1A TO-92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92MOD
  • Package / Case: TO-226-3, TO-92-3 Long Body
pacchetto: TO-226-3, TO-92-3 Long Body
Azione2.688
MOSFET (Metal Oxide)
250V
1A (Ta)
2.5V, 4V
-
5.5nC @ 4V
140pF @ 25V
±10V
-
900mW (Ta)
2.6 Ohm @ 500mA, 4V
150°C (TJ)
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
hot 2SK2225-E
Renesas Electronics America

MOSFET N-CH 1500V 2A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 984.7pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 1A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PFM
  • Package / Case: TO-3PFM, SC-93-3
pacchetto: TO-3PFM, SC-93-3
Azione828.552
MOSFET (Metal Oxide)
1500V
2A (Ta)
15V
-
-
984.7pF @ 30V
±20V
-
50W (Tc)
12 Ohm @ 1A, 15V
150°C (TJ)
Through Hole
TO-3PFM
TO-3PFM, SC-93-3
2SK1859-E
Renesas Electronics America

MOSFET N-CH 900V 6A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione2.880
MOSFET (Metal Oxide)
900V
6A (Ta)
10V
-
-
980pF @ 10V
±30V
-
60W (Tc)
3 Ohm @ 3A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
2SK1775-E
Renesas Electronics America

MOSFET N-CH 900V 8A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione4.432
MOSFET (Metal Oxide)
900V
8A (Ta)
10V
-
-
1730pF @ 10V
±30V
-
60W (Tc)
1.6 Ohm @ 4A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
2SK1342-E
Renesas Electronics America

MOSFET N-CH 900V 6A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione6.544
MOSFET (Metal Oxide)
900V
8A (Ta)
10V
-
-
1730pF @ 10V
±30V
-
100W (Tc)
1.6 Ohm @ 4A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
2SK1341-E
Renesas Electronics America

MOSFET N-CH 900V 6A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione4.832
MOSFET (Metal Oxide)
900V
6A (Ta)
10V
-
-
980pF @ 10V
±30V
-
100W (Tc)
3 Ohm @ 3A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
2SK1340-E
Renesas Electronics America

MOSFET N-CH 900V 5A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione7.120
MOSFET (Metal Oxide)
900V
5A (Ta)
10V
-
-
740pF @ 10V
±30V
-
100W (Tc)
4 Ohm @ 3A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
hot 2SK1339-E
Renesas Electronics America

MOSFET N-CH 900V 3A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione21.252
MOSFET (Metal Oxide)
900V
3A (Ta)
10V
-
-
425pF @ 10V
±30V
-
80W (Tc)
7 Ohm @ 1.5A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
UPA2766T1A-E2-AY
Renesas Electronics America

MOSFET N-CH 30V 130A 8HVSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 257nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10850pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.82 mOhm @ 39A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HVSON (5.4x5.15)
  • Package / Case: 8-PowerVDFN
pacchetto: 8-PowerVDFN
Azione7.728
MOSFET (Metal Oxide)
30V
130A (Tc)
4.5V, 10V
-
257nC @ 10V
10850pF @ 10V
±20V
-
1.5W (Ta), 83W (Tc)
1.82 mOhm @ 39A, 4.5V
150°C (TJ)
Surface Mount
8-HVSON (5.4x5.15)
8-PowerVDFN
RJK6025DPD-00#J2
Renesas Electronics America

MOSFET N-CH 600V 1A MP3A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 37.5pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 29.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 17.5 Ohm @ 500mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MP-3A
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione2.240
MOSFET (Metal Oxide)
600V
1A (Ta)
10V
5V @ 1mA
5nC @ 10V
37.5pF @ 25V
±30V
-
29.7W (Tc)
17.5 Ohm @ 500mA, 10V
150°C (TJ)
Surface Mount
MP-3A
TO-252-3, DPak (2 Leads + Tab), SC-63
RJK6024DPD-00#J2
Renesas Electronics America

MOSFET N-CH 600V 0.4A MP3A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 37.5pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 27.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 Ohm @ 200mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MP-3A
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.736
MOSFET (Metal Oxide)
600V
400mA (Ta)
10V
-
4.3nC @ 10V
37.5pF @ 25V
±30V
-
27.2W (Tc)
42 Ohm @ 200mA, 10V
150°C (TJ)
Surface Mount
MP-3A
TO-252-3, DPak (2 Leads + Tab), SC-63
RJK2055DPA-00#J0
Renesas Electronics America

MOSFET N-CH 200V W-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 69 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione4.688
MOSFET (Metal Oxide)
200V
20A (Ta)
10V
-
38nC @ 10V
2400pF @ 25V
±30V
-
30W (Tc)
69 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN
RJK1055DPB-00#J5
Renesas Electronics America

MOSFET N-CH 100V 23A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione2.064
MOSFET (Metal Oxide)
100V
23A (Ta)
10V
-
35nC @ 10V
2550pF @ 10V
±20V
-
60W (Tc)
17 mOhm @ 11.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot RJK1053DPB-00#J5
Renesas Electronics America

MOSFET N-CH 100V 25A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione79.608
MOSFET (Metal Oxide)
100V
25A (Ta)
4.5V, 10V
-
43nC @ 4.5V
6160pF @ 10V
±20V
-
65W (Tc)
13 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK0854DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione2.832
MOSFET (Metal Oxide)
80V
25A (Ta)
10V
-
27nC @ 10V
2000pF @ 10V
±20V
-
55W (Tc)
13 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot RJK0852DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V 30A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione6.564
MOSFET (Metal Oxide)
80V
30A (Ta)
4.5V, 10V
-
28nC @ 4.5V
4150pF @ 10V
±20V
-
55W (Tc)
12 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK0654DPB-00#J5
Renesas Electronics America

MOSFET N-CH 60V LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione3.392
MOSFET (Metal Oxide)
60V
30A (Ta)
10V
-
27nC @ 10V
2000pF @ 10V
±20V
-
55W (Tc)
8.3 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK0454DPB-00#J5
Renesas Electronics America

MOSFET N-CH 40V 40A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione4.448
MOSFET (Metal Oxide)
40V
40A (Ta)
10V
-
25nC @ 10V
2000pF @ 10V
±20V
-
55W (Tc)
4.9 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK0452DPB-00#J5
Renesas Electronics America

MOSFET N-CH 40V 45A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4030pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione6.064
MOSFET (Metal Oxide)
40V
45A (Ta)
4.5V, 10V
-
26nC @ 4.5V
4030pF @ 10V
±20V
-
55W (Tc)
3.5 mOhm @ 22.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK03C1DPB-00#J5
Renesas Electronics America

MOSFET N-CH 30V 60A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione6.720
MOSFET (Metal Oxide)
30V
60A (Ta)
4.5V, 10V
-
42nC @ 4.5V
6000pF @ 10V
±20V
Schottky Diode (Body)
65W (Tc)
2.2 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot NP90N06VLG-E1-AY
Renesas Electronics America

MOSFET N-CH 60V 90A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.644
MOSFET (Metal Oxide)
60V
90A (Tc)
4.5V, 10V
2.5V @ 250µA
135nC @ 10V
6900pF @ 25V
±20V
-
1.2W (Ta), 105W (Tc)
7.8 mOhm @ 45A, 10V
175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
NP88N03KDG-E1-AY
Renesas Electronics America

MOSFET N-CH 30V 88A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 44A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.912
MOSFET (Metal Oxide)
30V
88A (Tc)
4.5V, 10V
2.5V @ 250µA
250nC @ 10V
13500pF @ 25V
±20V
-
1.8W (Ta), 200W (Tc)
2.4 mOhm @ 44A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP83P06PDG-E1-AY
Renesas Electronics America

MOSFET P-CH 60V 83A TO-263

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 41.5A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.296
MOSFET (Metal Oxide)
60V
83A (Tc)
4.5V, 10V
2.5V @ 1mA
190nC @ 10V
10100pF @ 10V
±20V
-
1.8W (Ta), 150W (Tc)
8.8 mOhm @ 41.5A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP80N06PLG-E1B-AY
Renesas Electronics America

MOSFET N-CH 60V 80A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione2.816
MOSFET (Metal Oxide)
60V
80A (Tc)
4.5V, 10V
2.5V @ 250µA
128nC @ 10V
6900pF @ 25V
±20V
-
1.8W (Ta), 115W (Tc)
8.3 mOhm @ 40A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP80N04PUG-E1B-AY
Renesas Electronics America

MOSFET N-CH 40V 80A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.296
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
4V @ 250µA
135nC @ 10V
7350pF @ 25V
±20V
-
1.8W (Ta), 115W (Tc)
4.5 mOhm @ 40A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP80N04PLG-E1B-AY
Renesas Electronics America

MOSFET N-CH 40V 80A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.192
MOSFET (Metal Oxide)
40V
80A (Tc)
4.5V, 10V
2.5V @ 250µA
135nC @ 10V
6900pF @ 25V
±20V
-
1.8W (Ta), 115W (Tc)
4.5 mOhm @ 40A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NP75P04YLG-E1-AY
Renesas Electronics America

MOSFET P-CH 40V 75A 8HSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 138W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 37.5A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSON
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
pacchetto: 8-SMD, Flat Lead Exposed Pad
Azione15.108
MOSFET (Metal Oxide)
40V
75A (Tc)
5V, 10V
2.5V @ 250µA
140nC @ 10V
4800pF @ 25V
±20V
-
1W (Ta), 138W (Tc)
9.7 mOhm @ 37.5A, 10V
175°C (TJ)
Surface Mount
8-HSON
8-SMD, Flat Lead Exposed Pad