Pagina 10 - Prodotti Renesas Electronics America - Transistor - FET, MOSFET - Singoli | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559-834
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Prodotti Renesas Electronics America - Transistor - FET, MOSFET - Singoli

Record 341
Pagina  10/13
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RJK4514DPK-00#T0
Renesas Electronics America

MOSFET N-CH 450V 22A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione3.536
MOSFET (Metal Oxide)
450V
22A (Ta)
10V
-
46nC @ 10V
1800pF @ 25V
±30V
-
150W (Tc)
300 mOhm @ 11A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
RJK4512DPE-00#J3
Renesas Electronics America

MOSFET N-CH 450V 14A LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 510 mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
pacchetto: SC-83
Azione4.240
MOSFET (Metal Oxide)
450V
14A (Ta)
10V
-
29nC @ 10V
1100pF @ 25V
±30V
-
100W (Tc)
510 mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
RJK4018DPK-00#T0
Renesas Electronics America

MOSFET N-CH 400V 43A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 21.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione7.648
MOSFET (Metal Oxide)
400V
43A (Ta)
10V
-
99nC @ 10V
4100pF @ 25V
±30V
-
200W (Tc)
100 mOhm @ 21.5A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
RJK4013DPE-00#J3
Renesas Electronics America

MOSFET N-CH 400V 17A LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 8.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
pacchetto: SC-83
Azione3.168
MOSFET (Metal Oxide)
400V
17A (Ta)
10V
-
38nC @ 10V
1450pF @ 25V
±30V
-
100W (Tc)
300 mOhm @ 8.5A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
RJK4007DPP-M0#T2
Renesas Electronics America

MOSFET N-CH 400V 7.6A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FL
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione2.208
MOSFET (Metal Oxide)
400V
7.6A (Ta)
10V
-
24.5nC @ 10V
850pF @ 25V
±30V
-
32W (Tc)
550 mOhm @ 7A, 10V
150°C (TJ)
Through Hole
TO-220FL
TO-220-3 Full Pack
RJK4006DPP-M0#T2
Renesas Electronics America

MOSFET N-CH 400V 8A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FL
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione3.088
MOSFET (Metal Oxide)
400V
8A (Ta)
10V
-
20nC @ 10V
620pF @ 25V
±30V
-
29W (Tc)
800 mOhm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FL
TO-220-3 Full Pack
RJK4006DPD-00#J2
Renesas Electronics America

MOSFET N-CH 400V 8A MP3A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MP-3A
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.008
MOSFET (Metal Oxide)
400V
8A (Ta)
10V
-
20nC @ 10V
620pF @ 25V
±30V
-
65W (Tc)
800 mOhm @ 4A, 10V
150°C (TJ)
Surface Mount
MP-3A
TO-252-3, DPak (2 Leads + Tab), SC-63
RJK4002DPP-M0#T2
Renesas Electronics America

MOSFET N-CH 400V 3A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 100V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FL
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione3.104
MOSFET (Metal Oxide)
400V
3A (Ta)
10V
-
6nC @ 100V
165pF @ 25V
±30V
-
20W (Tc)
2.9 Ohm @ 1.5A, 10V
150°C (TJ)
Through Hole
TO-220FL
TO-220-3 Full Pack
hot RJK2557DPA-00#J0
Renesas Electronics America

MOSFET N-CH 250V 17A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 128 mOhm @ 8.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione30.000
MOSFET (Metal Oxide)
250V
17A (Ta)
10V
-
20nC @ 10V
1250pF @ 25V
±30V
-
30W (Tc)
128 mOhm @ 8.5A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN
hot RJK2555DPA-00#J0
Renesas Electronics America

MOSFET N-CH 250V 17A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 104 mOhm @ 8.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione11.172
MOSFET (Metal Oxide)
250V
17A (Ta)
10V
-
39nC @ 10V
2400pF @ 25V
±30V
-
30W (Tc)
104 mOhm @ 8.5A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN
RJK2511DPK-00#T0
Renesas Electronics America

MOSFET N-CH 250V 65A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 32.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione3.936
MOSFET (Metal Oxide)
250V
65A (Ta)
10V
-
120nC @ 10V
4900pF @ 25V
±30V
-
200W (Tc)
34 mOhm @ 32.5A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
hot RJK2057DPA-00#J0
Renesas Electronics America

MOSFET N-CH 200V 20A WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione14.388
MOSFET (Metal Oxide)
200V
20A (Ta)
10V
-
19nC @ 10V
1250pF @ 25V
±30V
-
30W (Tc)
85 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN
RJK2009DPM-00#T0
Renesas Electronics America

MOSFET N-CH 200V 40A TO3PFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 20A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PFM
  • Package / Case: TO-3PFM, SC-93-3
pacchetto: TO-3PFM, SC-93-3
Azione3.328
MOSFET (Metal Oxide)
200V
40A (Ta)
10V
-
72nC @ 10V
2900pF @ 25V
±30V
-
60W (Tc)
36 mOhm @ 20A, 10V
-
Through Hole
TO-3PFM
TO-3PFM, SC-93-3
RJK2006DPE-00#J3
Renesas Electronics America

MOSFET N-CH 200V 40A LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
pacchetto: SC-83
Azione5.936
MOSFET (Metal Oxide)
200V
40A (Ta)
10V
-
43nC @ 10V
1800pF @ 25V
±30V
-
100W (Tc)
59 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
RJK0660DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 60V 40A WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-WFDFN Exposed Pad
pacchetto: 8-WFDFN Exposed Pad
Azione3.360
MOSFET (Metal Oxide)
60V
40A (Ta)
10V
-
45nC @ 10V
3600pF @ 10V
±20V
-
65W (Tc)
5.1 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-WFDFN Exposed Pad
RJK0659DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 60V 30A WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-WFDFN Exposed Pad
pacchetto: 8-WFDFN Exposed Pad
Azione6.096
MOSFET (Metal Oxide)
60V
30A (Ta)
10V
-
30.6nC @ 10V
2400pF @ 10V
±20V
-
55W (Tc)
8 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-WFDFN Exposed Pad
RJK0658DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 60V 25A WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-WFDFN Exposed Pad
pacchetto: 8-WFDFN Exposed Pad
Azione2.672
MOSFET (Metal Oxide)
60V
25A (Ta)
10V
-
19.4nC @ 10V
1580pF @ 10V
±20V
-
50W (Tc)
11.1 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-WFDFN Exposed Pad
RJK0601DPN-E0#T2
Renesas Electronics America

MOSFET N-CH 60V 110A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 55A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione2.656
MOSFET (Metal Oxide)
60V
110A (Ta)
10V
-
141nC @ 10V
10000pF @ 10V
±20V
-
200W (Tc)
3.1 mOhm @ 55A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
NP90N055NUK-S18-AY
Renesas Electronics America

MOSFET N-CH 55V 90A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262-3
  • Package / Case: TO-262-3 Full Pack, I2Pak
pacchetto: TO-262-3 Full Pack, I2Pak
Azione3.824
MOSFET (Metal Oxide)
55V
90A (Tc)
10V
4V @ 250µA
120nC @ 10V
7350pF @ 25V
±20V
-
1.8W (Ta), 176W (Tc)
3.8 mOhm @ 45A, 10V
175°C (TJ)
Through Hole
TO-262-3
TO-262-3 Full Pack, I2Pak
NP90N055MUK-S18-AY
Renesas Electronics America

MOSFET N-CH 55V 90A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione4.928
MOSFET (Metal Oxide)
55V
90A (Tc)
10V
4V @ 250µA
120nC @ 10V
7350pF @ 25V
±20V
-
1.8W (Ta), 176W (Tc)
3.8 mOhm @ 45A, 10V
175°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack
NP90N04VUK-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 90A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione2.896
MOSFET (Metal Oxide)
40V
90A (Tc)
10V
4V @ 250µA
102nC @ 10V
5850pF @ 25V
±20V
-
1.2W (Ta), 147W (Tc)
2.8 mOhm @ 45A, 10V
175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
NP90N04NUK-S18-AY
Renesas Electronics America

MOSFET N-CH 40V 90A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Full Pack, I2Pak
pacchetto: TO-262-3 Full Pack, I2Pak
Azione6.128
MOSFET (Metal Oxide)
40V
90A (Tc)
10V
4V @ 250µA
120nC @ 10V
7050pF @ 25V
±20V
-
1.8W (Ta), 176W (Tc)
2.8 mOhm @ 45A, 10V
175°C (TJ)
Through Hole
TO-262
TO-262-3 Full Pack, I2Pak
NP90N04MUK-S18-AY
Renesas Electronics America

MOSFET N-CH 40V 90A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione5.152
MOSFET (Metal Oxide)
40V
90A (Tc)
10V
4V @ 250µA
120nC @ 10V
7050pF @ 25V
±20V
-
1.8W (Ta), 176W (Tc)
2.8 mOhm @ 45A, 10V
175°C (TJ)
Through Hole
TO-220
TO-220-3 Full Pack
hot NP90N03VLG-E1-AY
Renesas Electronics America

MOSFET N-CH 30V 90A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione9.660
MOSFET (Metal Oxide)
30V
90A (Tc)
4.5V, 10V
2.5V @ 250µA
135nC @ 10V
7500pF @ 25V
±20V
-
1.2W (Ta), 105W (Tc)
3.2 mOhm @ 45A, 10V
175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NP90N03VHG-E1-AY
Renesas Electronics America

MOSFET N-CH 30V 90A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione9.768
MOSFET (Metal Oxide)
30V
90A (Tc)
10V
4V @ 250µA
135nC @ 10V
7500pF @ 25V
±20V
-
1.2W (Ta), 105W (Tc)
3.2 mOhm @ 45A, 10V
175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
NP89N055PUK-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 90A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-3
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.640
MOSFET (Metal Oxide)
55V
90A (Tc)
10V
4V @ 250µA
102nC @ 10V
6000pF @ 25V
±20V
-
1.8W (Ta), 147W (Tc)
4 mOhm @ 45A, 10V
175°C (TJ)
Surface Mount
TO-263-3
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP89N055NUK-S18-AY
Renesas Electronics America

MOSFET N-CH 55V 90A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Full Pack, I2Pak
pacchetto: TO-262-3 Full Pack, I2Pak
Azione3.120
MOSFET (Metal Oxide)
55V
90A (Tc)
10V
4V @ 250µA
102nC @ 10V
6000pF @ 25V
±20V
-
1.8W (Ta), 147W (Tc)
4.4 mOhm @ 45A, 10V
175°C (TJ)
Through Hole
TO-262
TO-262-3 Full Pack, I2Pak
NP89N055MUK-S18-AY
Renesas Electronics America

MOSFET N-CH 55V 90A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione4.992
MOSFET (Metal Oxide)
55V
90A (Tc)
10V
4V @ 250µA
102nC @ 10V
6000pF @ 25V
±20V
-
1.8W (Ta), 147W (Tc)
4.4 mOhm @ 45A, 10V
175°C (TJ)
Through Hole
TO-220-3
TO-220-3