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Prodotti Nexperia USA Inc.

Record 11.821
Pagina  14/423
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
BUK964R2-60E,118
Nexperia USA Inc.

MOSFET N-CH 60V 100A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11380pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 263W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione4.048
PSMN1R6-40YLC:115
Nexperia USA Inc.

MOSFET N-CH 40V 100A POWERSO8-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.95V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7790pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 288W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.55 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SOT-1023, 4-LFPAK
pacchetto: SOT-1023, 4-LFPAK
Azione2.992
PSMN017-80PS,127
Nexperia USA Inc.

MOSFET N-CH 80V TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1573pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 103W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione13.302
PSMN2R6-30YLC,115
Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.95V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2435pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione15.954
PBSS4560PA,115
Nexperia USA Inc.

TRANS NPN 60V 6A SOT1061

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 290mV @ 300mA, 6A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2A, 2V
  • Power - Max: 2.1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN
  • Supplier Device Package: 3-HUSON (2x2)
pacchetto: 3-UDFN
Azione7.024
PBSS5250T,215
Nexperia USA Inc.

TRANS PNP 50V 2A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 480mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione5.888
BC857BW,135
Nexperia USA Inc.

TRANS PNP 45V 0.1A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
pacchetto: SC-70, SOT-323
Azione80.802
PDTC144WM,315
Nexperia USA Inc.

TRANS PREBIAS NPN 250MW SOT883

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: DFN1006-3
pacchetto: SC-101, SOT-883
Azione7.696
PUMD3,135
Nexperia USA Inc.

TRANS PREBIAS NPN/PNP 6TSSOP

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione3.216
PZU13B3,115
Nexperia USA Inc.

DIODE ZENER 13V 310MW SOD323F

  • Voltage - Zener (Nom) (Vz): 13V
  • Tolerance: ±2%
  • Power - Max: 310mW
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 10V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
pacchetto: SC-90, SOD-323F
Azione6.000
BZV85-C68,113
Nexperia USA Inc.

DIODE ZENER 68V 1.3W DO41

  • Voltage - Zener (Nom) (Vz): 68V
  • Tolerance: ±5%
  • Power - Max: 1.3W
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 48V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
pacchetto: DO-204AL, DO-41, Axial
Azione7.472
BZT52-C15J
Nexperia USA Inc.

DIODE ZENER 14.7V 350MW SOD123

  • Voltage - Zener (Nom) (Vz): 14.7V
  • Tolerance: ±6.1%
  • Power - Max: 350mW
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 10.5V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
pacchetto: SOD-123
Azione5.824
BZV55-B47,115
Nexperia USA Inc.

DIODE ZENER 47V 500MW SOD80C

  • Voltage - Zener (Nom) (Vz): 47V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 170 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 32.9V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80C
pacchetto: DO-213AC, MINI-MELF, SOD-80
Azione7.888
NZH3V9B,115
Nexperia USA Inc.

DIODE ZENER 3.9V 500MW SOD123F

  • Voltage - Zener (Nom) (Vz): 3.9V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 50 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
pacchetto: SOD-123F
Azione57.150
PMEG3010AESBYL
Nexperia USA Inc.

DIODE SCHOTTKY 30V 1A SOD993

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.5ns
  • Current - Reverse Leakage @ Vr: 255µA @ 20V
  • Capacitance @ Vr, F: 86pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-XDFN
  • Supplier Device Package: DSN1006-2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: 2-XDFN
Azione3.344
74HC573BQ,115
Nexperia USA Inc.

IC OCTAL D TRANSP LATCH 20DHVQFN

  • Logic Type: D-Type Transparent Latch
  • Circuit: 8:8
  • Output Type: Tri-State
  • Voltage - Supply: 2 V ~ 6 V
  • Independent Circuits: 1
  • Delay Time - Propagation: 14ns
  • Current - Output High, Low: 7.8mA, 7.8mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-VFQFN Exposed Pad
  • Supplier Device Package: 20-DHVQFN (4.5x 2.5)
pacchetto: 20-VFQFN Exposed Pad
Azione46.314
74HCT02DB,118
Nexperia USA Inc.

IC GATE NOR 4CH 2-INP 14-SSOP

  • Logic Type: NOR Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 4mA, 4mA
  • Logic Level - Low: 0.8V
  • Logic Level - High: 2V
  • Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-SSOP
  • Package / Case: 14-SSOP (0.209", 5.30mm Width)
pacchetto: 14-SSOP (0.209", 5.30mm Width)
Azione4.592
74LVC1G58GS,132
Nexperia USA Inc.

IC GATE MULTI FUNCTION 6XSON

  • Logic Type: Configurable Multiple Function
  • Number of Circuits: 1
  • Number of Inputs: 3
  • Schmitt Trigger Input: Yes
  • Output Type: Single-Ended
  • Current - Output High, Low: 32mA, 32mA
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: 6-XSON, SOT1202 (1x1)
pacchetto: 6-XFDFN
Azione4.176
74HC244D,653
Nexperia USA Inc.

IC BUFF/DVR TRI-ST DUAL 20SOIC

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 7.8mA, 7.8mA
  • Voltage - Supply: 2 V ~ 6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO
pacchetto: 20-SOIC (0.295", 7.50mm Width)
Azione2.288
74HC4053DB,118
Nexperia USA Inc.

IC MUX/DEMUX TRIPLE 2X1 16SSOP

  • Switch Circuit: SPDT
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Number of Circuits: 3
  • On-State Resistance (Max): 120 Ohm
  • Channel-to-Channel Matching (ΔRon): 6 Ohm
  • Voltage - Supply, Single (V+): 2 V ~ 10 V
  • Voltage - Supply, Dual (V±): ±1.5 V ~ 5 V
  • Switch Time (Ton, Toff) (Max): 31ns, 29ns
  • -3db Bandwidth: 170MHz
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 3.5pF
  • Current - Leakage (IS(off)) (Max): 100nA
  • Crosstalk: -60dB @ 1MHz
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Package / Case: 16-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 16-SSOP
pacchetto: 16-SSOP (0.209", 5.30mm Width)
Azione2.400
74LV1T00GWH
Nexperia USA Inc.

IC GATE NAND 1CH 2-INP TSSOP5

  • Logic Type: NAND Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.1 V ~ 0.3 V
  • Logic Level - High: 1.28 V ~ 4.6 V
  • Max Propagation Delay @ V, Max CL: 4.8ns @ 5V, 30pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-TSSOP
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
pacchetto: 5-TSSOP, SC-70-5, SOT-353
Azione86.844
BZX585-C47-QX
Nexperia USA Inc.

BZX585-C47-Q/SOD523/SC-79

  • Voltage - Zener (Nom) (Vz): 47 V
  • Tolerance: ±5%
  • Power - Max: 300 mW
  • Impedance (Max) (Zzt): 170 Ohms
  • Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
pacchetto: -
Request a Quote
BZT52H-A39X
Nexperia USA Inc.

BZT52H-A39/SOD123F/SOD2

  • Voltage - Zener (Nom) (Vz): 39 V
  • Tolerance: ±1%
  • Power - Max: 375 mW
  • Impedance (Max) (Zzt): 75 Ohms
  • Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
pacchetto: -
Request a Quote
BCP51-10-QF
Nexperia USA Inc.

BCP51-10-Q/SOT223/SC-73

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 650 mW
  • Frequency - Transition: 145MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: -
Azione12.000
HPZR-C10X
Nexperia USA Inc.

HPZR-C10/SOD123W/SOD2

  • Voltage - Zener (Nom) (Vz): 10 V
  • Tolerance: ±5%
  • Power - Max: 962 mW
  • Impedance (Max) (Zzt): 18.02 Ohms
  • Current - Reverse Leakage @ Vr: 10 µA @ 8.5 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
pacchetto: -
Azione8.532
PMZ600UNEZ
Nexperia USA Inc.

MOSFET N-CH 20V 600MA DFN1006-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883
  • Package / Case: SC-101, SOT-883
pacchetto: -
Azione27.690
BZX884S-C27-QYL
Nexperia USA Inc.

BZX884S-C27-Q/SOD882BD/XSON2

  • Voltage - Zener (Nom) (Vz): 27 V
  • Tolerance: ±1.85%
  • Power - Max: 365 mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: DFN1006BD-2
pacchetto: -
Azione28.500
PMPB10XNX
Nexperia USA Inc.

MOSFET N-CH 30V 9.5A DFN2020MD-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1761 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 9.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
pacchetto: -
Azione26.004