Pagina 17 - Prodotti NXP - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti NXP - Transistor - FET, MOSFET - Singoli

Record 486
Pagina  17/18
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BUK9C1R3-40EJ
NXP

MOSFET N-CH 40V D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 90A, 5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Azione3.664
MOSFET (Metal Oxide)
40V
190A (Tc)
-
-
-
-
-
-
-
1.3 mOhm @ 90A, 5V
-
Surface Mount
D2PAK
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
PMV90EN,215
NXP

MOSFET N-CH 30V 1.9A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 132pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 310mW (Ta), 2.09W (Tc)
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.128
MOSFET (Metal Oxide)
30V
1.9A (Ta)
4.5V, 10V
2.5V @ 250µA
4nC @ 10V
132pF @ 15V
±20V
-
310mW (Ta), 2.09W (Tc)
84 mOhm @ 1.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
hot PMV65UN,215
NXP

MOSFET N-CH 20V 2A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 183pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 310mW (Ta), 2.17W (Tc)
  • Rds On (Max) @ Id, Vgs: 76 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.584
MOSFET (Metal Oxide)
20V
2.2A (Ta)
1.8V, 4.5V
1V @ 250µA
3.9nC @ 4.5V
183pF @ 10V
±8V
-
310mW (Ta), 2.17W (Tc)
76 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
PMV37EN,215
NXP

MOSFET N-CH 30V 3.1A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 380mW (Ta)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.544
MOSFET (Metal Oxide)
30V
3.1A (Ta)
4.5V, 10V
2.5V @ 250µA
10nC @ 10V
330pF @ 10V
±20V
-
380mW (Ta)
36 mOhm @ 3.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
hot PMV30XN,215
NXP

MOSFET N-CH 20V 3.2A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 380mW (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 3.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione141.612
MOSFET (Metal Oxide)
20V
3.2A (Ta)
2.5V, 4.5V
1.5V @ 250µA
7.4nC @ 4.5V
420pF @ 15V
±12V
-
380mW (Ta)
35 mOhm @ 3.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
hot PMV28UN,215
NXP

MOSFET N-CH 20V 3.3A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 380mW (Ta)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 3.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione148.200
MOSFET (Metal Oxide)
20V
3.3A (Ta)
1.8V, 4.5V
1V @ 270µA
9nC @ 4.5V
470pF @ 10V
±8V
-
380mW (Ta)
32 mOhm @ 3.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
hot PMV185XN,215
NXP

MOSFET N-CH 30V 1.1A TO-236AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 325mW (Ta), 1.275W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione148.080
MOSFET (Metal Oxide)
30V
1.1A (Ta)
2.5V, 4.5V
1.5V @ 250µA
1.3nC @ 4.5V
76pF @ 15V
±12V
-
325mW (Ta), 1.275W (Tc)
250 mOhm @ 1.1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
hot PMV170UN,215
NXP

MOSFET N-CH 20V 1A TO-236AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 325mW (Ta), 1.14W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione138.732
MOSFET (Metal Oxide)
20V
1A (Ta)
1.8V, 4.5V
1V @ 250µA
1.65nC @ 4.5V
83pF @ 10V
±8V
-
325mW (Ta), 1.14W (Tc)
165 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
PMT760EN,135
NXP

MOSFET N-CH 100V SC-73

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 80V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 6.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 800mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione3.152
MOSFET (Metal Oxide)
100V
900mA (Ta)
4.5V, 10V
2.5V @ 250µA
3nC @ 10V
160pF @ 80V
±20V
-
800mW (Ta), 6.2W (Tc)
950 mOhm @ 800mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
PMT29EN,115
NXP

MOSFET N-CH 30V 6A SC-73

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione5.056
MOSFET (Metal Oxide)
30V
6A (Ta)
4.5V, 10V
2.5V @ 250µA
11nC @ 10V
492pF @ 15V
±20V
-
820mW (Ta), 8.33W (Tc)
29 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
PMT21EN,135
NXP

MOSFET N-CH 30V 7.4A SC-73

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione5.232
MOSFET (Metal Oxide)
30V
7.4A (Ta)
4.5V, 10V
2.5V @ 250µA
14.4nC @ 10V
588pF @ 15V
±20V
-
820mW (Ta), 8.33W (Tc)
21 mOhm @ 7.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
PMT200EN,135
NXP

MOSFET N-CH 100V 1.8A SC-73

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 80V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 8.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione6.432
MOSFET (Metal Oxide)
100V
1.8A (Ta)
4.5V, 10V
2.5V @ 250µA
10nC @ 10V
475pF @ 80V
±20V
-
800mW (Ta), 8.3W (Tc)
235 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot PMR670UPE,115
NXP

MOSFET P-CH 20V 480MA SC-75

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta), 770mW (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 400mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75
  • Package / Case: SC-75, SOT-416
pacchetto: SC-75, SOT-416
Azione148.200
MOSFET (Metal Oxide)
20V
480mA (Ta)
1.8V, 4.5V
1.3V @ 250µA
1.14nC @ 4.5V
87pF @ 10V
±8V
-
250mW (Ta), 770mW (Tc)
850 mOhm @ 400mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75
SC-75, SOT-416
PMPB20UN,115
NXP

MOSFET N-CH 20V 6.6A 6DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN2020MD (2x2)
  • Package / Case: 6-UDFN Exposed Pad
pacchetto: 6-UDFN Exposed Pad
Azione6.592
MOSFET (Metal Oxide)
20V
6.6A (Ta)
1.8V, 4.5V
1V @ 250µA
7.1nC @ 4.5V
460pF @ 10V
±8V
-
1.7W (Ta), 12.5W (Tc)
25 mOhm @ 6.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-DFN2020MD (2x2)
6-UDFN Exposed Pad
hot PMN22XN,115
NXP

MOSFET N-CH 30V 5.7A SC-74

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 545mW (Ta), 6.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
pacchetto: SC-74, SOT-457
Azione141.600
MOSFET (Metal Oxide)
30V
5.7A (Ta)
2.5V, 4.5V
1.5V @ 250µA
10nC @ 4.5V
585pF @ 15V
±12V
-
545mW (Ta), 6.25W (Tc)
27 mOhm @ 5.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SC-74, SOT-457
PMN15UN,115
NXP

MOSFET N-CH 30V 8A SC-74

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
pacchetto: SC-74, SOT-457
Azione2.672
MOSFET (Metal Oxide)
30V
8A (Tc)
-
-
-
-
-
-
-
-
-
Surface Mount
6-TSOP
SC-74, SOT-457
hot PMG45UN,115
NXP

MOSFET N-CH 20V 3A SOT363

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 375mW (Ta), 4.35W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSSOP
  • Package / Case: 6-TSSOP, SC-88, SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione148.200
MOSFET (Metal Oxide)
20V
3A (Ta)
-
1V @ 250µA
3.3nC @ 4.5V
184pF @ 10V
-
-
375mW (Ta), 4.35W (Tc)
55 mOhm @ 3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP
6-TSSOP, SC-88, SOT-363
hot PMF87EN,115
NXP

MOSFET N-CH 30V 1.7A SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 275mW (Ta)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323-3
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione150.000
MOSFET (Metal Oxide)
30V
1.7A (Ta)
4.5V, 10V
2.5V @ 250µA
4.7nC @ 10V
135pF @ 15V
±20V
-
275mW (Ta)
80 mOhm @ 1.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323-3
SC-70, SOT-323
PMF77XN,115
NXP

MOSFET N-CH 30V 1.5A SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 270mW (Ta), 1.92W (Tc)
  • Rds On (Max) @ Id, Vgs: 97 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323-3
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione7.440
MOSFET (Metal Oxide)
30V
1.5A (Ta)
2.5V, 4.5V
1.5V @ 250µA
2.9nC @ 4.5V
170pF @ 15V
±12V
-
270mW (Ta), 1.92W (Tc)
97 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323-3
SC-70, SOT-323
hot PMF63UN,115
NXP

MOSFET N-CH 20V 1.8A SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 275mW (Ta), 1.785W (Tc)
  • Rds On (Max) @ Id, Vgs: 74 mOhm @ 1.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323-3
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione141.600
MOSFET (Metal Oxide)
20V
1.8A (Ta)
1.8V, 4.5V
1V @ 250µA
3.3nC @ 4.5V
185pF @ 10V
±8V
-
275mW (Ta), 1.785W (Tc)
74 mOhm @ 1.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323-3
SC-70, SOT-323
hot PMF250XN,115
NXP

MOSFET N-CH 30V 0.9A SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 275mW (Ta), 1.065W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323-3
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione46.200
MOSFET (Metal Oxide)
30V
900mA (Ta)
2.5V, 4.5V
1.5V @ 250µA
1.1nC @ 4.5V
50pF @ 15V
±12V
-
275mW (Ta), 1.065W (Tc)
300 mOhm @ 900mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323-3
SC-70, SOT-323
NX3020NAKT,115
NXP

MOSFET N-CH 30V 180MA SC-75

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230mW (Ta), 1.06W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75
  • Package / Case: SC-75, SOT-416
pacchetto: SC-75, SOT-416
Azione4.000
MOSFET (Metal Oxide)
30V
180mA (Ta)
2.5V, 10V
1.5V @ 250µA
0.44nC @ 4.5V
13pF @ 10V
±20V
-
230mW (Ta), 1.06W (Tc)
4.5 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75
SC-75, SOT-416
NX3008PBKT,115
NXP

MOSFET P-CH 30V SC-75

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta), 770mW (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75
  • Package / Case: SC-75, SOT-416
pacchetto: SC-75, SOT-416
Azione4.544
MOSFET (Metal Oxide)
30V
200mA (Ta)
2.5V, 4.5V
1.1V @ 250µA
0.72nC @ 4.5V
46pF @ 15V
±8V
-
250mW (Ta), 770mW (Tc)
4.1 Ohm @ 200mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75
SC-75, SOT-416
NX3008NBKT,115
NXP

MOSFET N-CH 30V SC-75

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta), 770mW (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75
  • Package / Case: SC-75, SOT-416
pacchetto: SC-75, SOT-416
Azione5.088
MOSFET (Metal Oxide)
30V
350mA (Ta)
1.8V, 4.5V
1.1V @ 250µA
0.68nC @ 4.5V
50pF @ 15V
±8V
-
250mW (Ta), 770mW (Tc)
1.4 Ohm @ 350mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75
SC-75, SOT-416
BSS84AKT,115
NXP

MOSFET P-CH 50V SC-75

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta), 770mW (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75
  • Package / Case: SC-75, SOT-416
pacchetto: SC-75, SOT-416
Azione4.400
MOSFET (Metal Oxide)
50V
150mA (Ta)
10V
2.1V @ 250µA
0.35nC @ 5V
36pF @ 25V
±20V
-
250mW (Ta), 770mW (Tc)
7.5 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75
SC-75, SOT-416
PMPB16XN,115
NXP

MOSFET N-CH 30V 7.2A 6DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN2020MD (2x2)
  • Package / Case: 6-UDFN Exposed Pad
pacchetto: 6-UDFN Exposed Pad
Azione7.280
MOSFET (Metal Oxide)
30V
7.2A (Ta)
2.5V, 4.5V
1.5V @ 250µA
10.8nC @ 4.5V
775pF @ 15V
±12V
-
1.7W (Ta), 12.5W (Tc)
21 mOhm @ 7.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-DFN2020MD (2x2)
6-UDFN Exposed Pad
PMPB12UN,115
NXP

MOSFET N-CH 20V 7.9A 6DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN2020MD (2x2)
  • Package / Case: 6-UDFN Exposed Pad
pacchetto: 6-UDFN Exposed Pad
Azione3.952
MOSFET (Metal Oxide)
20V
7.9A (Ta)
1.8V, 4.5V
1V @ 250µA
13nC @ 4.5V
886pF @ 10V
±8V
-
1.7W (Ta), 12.5W (Tc)
18 mOhm @ 7.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-DFN2020MD (2x2)
6-UDFN Exposed Pad
PMN25UN,115
NXP

MOSFET N-CH 20V 6A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 530mW (Ta), 6.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
pacchetto: SC-74, SOT-457
Azione4.240
MOSFET (Metal Oxide)
20V
6A (Ta)
1.8V, 4.5V
1V @ 250µA
10nC @ 4.5V
470pF @ 10V
±8V
-
530mW (Ta), 6.25W (Tc)
27 mOhm @ 6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SC-74, SOT-457