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Prodotti Micron Technology Inc. - Memoria

Record 10.993
Pagina  101/393
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT25QU512ABB8E12-0AUT TR
Micron Technology Inc.

IC FLASH 512M SPI 133MHZ TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
pacchetto: 24-TBGA
Azione6.976
FLASH
FLASH - NOR
512Mb (64M x 8)
SPI
133MHz
8ms, 2.8ms
-
1.7 V ~ 2 V
-40°C ~ 125°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
MT25QU128ABA1EW7-MSIT TR
Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8WPDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WPDFN (6x5)(MLP8)
pacchetto: 8-WDFN Exposed Pad
Azione2.928
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI
133MHz
8ms, 2.8ms
-
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WPDFN (6x5)(MLP8)
MT25QU02GCBB8E12-0AAT TR
Micron Technology Inc.

IC FLASH 2G SPI 133MHZ 24TPBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
pacchetto: 24-TBGA
Azione7.952
FLASH
FLASH - NOR
2Gb (256M x 8)
SPI
133MHz
8ms, 2.8ms
-
1.7 V ~ 2 V
-40°C ~ 105°C (TC)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
MT25QU01GBBB8E12-0AUT TR
Micron Technology Inc.

IC FLASH 1G SPI 133MHZ 24TPBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
pacchetto: 24-TBGA
Azione5.392
FLASH
FLASH - NOR
1Gb (128M x 8)
SPI
133MHz
8ms, 2.8ms
-
1.7 V ~ 2 V
-40°C ~ 125°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
MT25QL512ABB8E12-0AUT TR
Micron Technology Inc.

IC FLASH 512M SPI 24TPBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
pacchetto: 24-TBGA
Azione6.784
FLASH
FLASH - NOR
512Mb (64M x 8)
SPI
133MHz
8ms, 2.8ms
-
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
MT25QL256ABA8E12-1SAT TR
Micron Technology Inc.

IC FLASH 256M SPI 24TPBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
pacchetto: 24-TBGA
Azione5.536
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI
133MHz
8ms, 2.8ms
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
MT25QL128ABA1EW7-MSIT TR
Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8WPDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WPDFN (6x5)(MLP8)
pacchetto: 8-WDFN Exposed Pad
Azione5.648
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI
133MHz
8ms, 2.8ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WPDFN (6x5)(MLP8)
MT25QL02GCBB8E12-0AAT TR
Micron Technology Inc.

IC FLASH 2G SPI 133MHZ 24TPBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
pacchetto: 24-TBGA
Azione4.944
FLASH
FLASH - NOR
2Gb (256M x 8)
SPI
133MHz
8ms, 2.8ms
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
MT25QL01GBBB8E12-0AUT TR
Micron Technology Inc.

IC FLASH 1G SPI 133MHZ 24TPBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
pacchetto: 24-TBGA
Azione6.224
FLASH
FLASH - NOR
1Gb (128M x 8)
SPI
133MHz
8ms, 2.8ms
-
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
EDFA164A2PP-GD-F-R TR
Micron Technology Inc.

IC DRAM 16G PARALLEL 800MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 16Gb (256M x 64)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.112
DRAM
SDRAM - Mobile LPDDR3
16Gb (256M x 64)
Parallel
800MHz
-
-
1.14 V ~ 1.95 V
-30°C ~ 85°C (TC)
-
-
-
EDB8164B4PT-1DIT-F-R TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 533MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 8Gb (128M x 64)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.856
DRAM
SDRAM - Mobile LPDDR2
8Gb (128M x 64)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-40°C ~ 85°C (TC)
-
-
-
EDB8164B4PT-1D-F-R TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 533MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 8Gb (128M x 64)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.000
DRAM
SDRAM - Mobile LPDDR2
8Gb (128M x 64)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-30°C ~ 85°C (TC)
-
-
-
EDB8164B4PR-1D-F-R TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 533MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 8Gb (128M x 64)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.696
DRAM
SDRAM - Mobile LPDDR2
8Gb (128M x 64)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-30°C ~ 85°C (TC)
-
-
-
EDB4432BBBJ-1DAUT-F-R TR
Micron Technology Inc.

IC DRAM 4G PARALLEL 533MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.112
DRAM
SDRAM - Mobile LPDDR2
4Gb (128M x 32)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-40°C ~ 125°C (TC)
-
-
-
hot MT29F4T08EUHAFM4-3T:A
Micron Technology Inc.

IC FLASH 4T PARALLEL 333MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Tb (512G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.184
FLASH
FLASH - NAND
4Tb (512G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F512G08AUEBBH8-12:B
Micron Technology Inc.

IC FLASH 512G PARALLEL 83MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.160
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT53D1G64D8NZ-046 WT:E
Micron Technology Inc.

IC DRAM 64G 2133MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 64Gb (1G x 64)
  • Memory Interface: -
  • Clock Frequency: 2133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.368
DRAM
SDRAM - Mobile LPDDR4
64Gb (1G x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT53D1024M64D8NW-046 WT:D
Micron Technology Inc.

IC DRAM 64G 2133MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 64Gb (1G x 64)
  • Memory Interface: -
  • Clock Frequency: 2133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.280
DRAM
SDRAM - Mobile LPDDR4
64Gb (1G x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MTFC256GAOAMAM-WT
Micron Technology Inc.

IC FLASH 2T MMC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Tb (256G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.960
FLASH
FLASH - NAND
2Tb (256G x 8)
MMC
-
-
-
-
-25°C ~ 85°C (TA)
-
-
-
MTFC128GAOANEA-WT
Micron Technology Inc.

IC FLASH 1T MMC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.760
FLASH
FLASH - NAND
1Tb (128G x 8)
MMC
-
-
-
-
-25°C ~ 85°C (TA)
-
-
-
MT53D768M64D8SQ-046 WT:E
Micron Technology Inc.

IC DRAM 48G 2133MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 48Gb (768M x 64)
  • Memory Interface: -
  • Clock Frequency: 2133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.840
DRAM
SDRAM - Mobile LPDDR4
48Gb (768M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT53D768M64D8NZ-046 WT:E
Micron Technology Inc.

IC DRAM 48G 2133MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 48Gb (768M x 64)
  • Memory Interface: -
  • Clock Frequency: 2133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.032
DRAM
SDRAM - Mobile LPDDR4
48Gb (768M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT53D2048M32D8QD-053 WT:D
Micron Technology Inc.

IC DRAM 64G 1866MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 64Gb (2G x 32)
  • Memory Interface: -
  • Clock Frequency: 1866MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.600
DRAM
SDRAM - Mobile LPDDR4
64Gb (2G x 32)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT53D1G64D8SQ-053 WT:E
Micron Technology Inc.

IC DRAM 64G 1866MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 64Gb (1G x 64)
  • Memory Interface: -
  • Clock Frequency: 1866MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.848
DRAM
SDRAM - Mobile LPDDR4
64Gb (1G x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT53D1024M64D8WF-053 WT:D
Micron Technology Inc.

IC DRAM 64G 1866MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 64Gb (1G x 64)
  • Memory Interface: -
  • Clock Frequency: 1866MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.136
DRAM
SDRAM - Mobile LPDDR4
64Gb (1G x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT53D1024M64D8PM-053 WT:D
Micron Technology Inc.

IC DRAM 64G 1866MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 64Gb (1G x 64)
  • Memory Interface: -
  • Clock Frequency: 1866MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.392
DRAM
SDRAM - Mobile LPDDR4
64Gb (1G x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT53D1024M64D8NW-053 WT:D
Micron Technology Inc.

IC DRAM 64G 1866MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 64Gb (1G x 64)
  • Memory Interface: -
  • Clock Frequency: 1866MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.096
DRAM
SDRAM - Mobile LPDDR4
64Gb (1G x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT40A256M16GE-083E AUT:B
Micron Technology Inc.

IC DRAM 4G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (14x9)
pacchetto: 96-TFBGA
Azione22.164
DRAM
SDRAM - DDR4
4Gb (256M x 16)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 125°C (TC)
Surface Mount
96-TFBGA
96-FBGA (14x9)