Pagina 69 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  69/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
S99FL132KI010
Cypress Semiconductor Corp

IC FLASH NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.952
-
-
-
-
-
-
-
-
-
-
-
-
AT88SC12816C-MJ
Microchip Technology

IC EEPROM 128KBIT 5MHZ M2J

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 5MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 35µs
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: M2 J, Smart Card Module (ISO)
  • Supplier Device Package: M2 - J Module (ISO)
pacchetto: M2 J, Smart Card Module (ISO)
Azione5.536
EEPROM
EEPROM
128Kb (16K x 8)
I2C
5MHz
5ms
35µs
2.7 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
M2 J, Smart Card Module (ISO)
M2 - J Module (ISO)
MT29C8G96MAZBADJV-5 IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 12GBIT 168VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 8Gb (512M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 168-VFBGA
  • Supplier Device Package: 168-VFBGA (12x12)
pacchetto: 168-VFBGA
Azione4.880
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
8Gb (512M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
168-VFBGA
168-VFBGA (12x12)
CAT28C512L15
ON Semiconductor

IC EEPROM 512KBIT 150NS 32DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP (0.600", 15.24mm)
  • Supplier Device Package: 32-PDIP
pacchetto: 32-DIP (0.600", 15.24mm)
Azione5.200
EEPROM
EEPROM
512Kb (64K x 8)
Parallel
-
5ms
150ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
32-DIP (0.600", 15.24mm)
32-PDIP
IDT71256L35YI
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 35NS 28SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 28-SOJ
pacchetto: 28-BSOJ (0.300", 7.62mm Width)
Azione7.872
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
28-BSOJ (0.300", 7.62mm Width)
28-SOJ
DS1258W-100#
Maxim Integrated

IC NVSRAM 2MBIT 100NS 40EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 40-DIP Module (0.610", 15.495mm)
  • Supplier Device Package: 40-EDIP
pacchetto: 40-DIP Module (0.610", 15.495mm)
Azione7.184
NVSRAM
NVSRAM (Non-Volatile SRAM)
2Mb (128K x 16)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Through Hole
40-DIP Module (0.610", 15.495mm)
40-EDIP
70T659S12BC8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 12NS 256CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 2.4 V ~ 2.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-CABGA (17x17)
pacchetto: 256-LBGA
Azione6.736
SRAM
SRAM - Dual Port, Asynchronous
4.5Mb (128K x 36)
Parallel
-
12ns
12ns
2.4 V ~ 2.6 V
0°C ~ 70°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
7025L17J
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 17NS 84PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (8K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 17ns
  • Access Time: 17ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LCC (J-Lead)
  • Supplier Device Package: 84-PLCC (29.21x29.21)
pacchetto: 84-LCC (J-Lead)
Azione2.800
SRAM
SRAM - Dual Port, Asynchronous
128Kb (8K x 16)
Parallel
-
17ns
17ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
84-LCC (J-Lead)
84-PLCC (29.21x29.21)
CY7C1061G-10BV1XI
Cypress Semiconductor Corp

IC SRAM 16MBIT 10NS 48BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
pacchetto: 48-VFBGA
Azione5.152
SRAM
SRAM - Asynchronous
16Mb (1M x 16)
Parallel
-
10ns
10ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
70V25L55PF8
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (8K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione7.472
SRAM
SRAM - Dual Port, Asynchronous
128Kb (8K x 16)
Parallel
-
55ns
55ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MT29F4G16ABBEAH4:E
Micron Technology Inc.

IC FLASH 4GBIT 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
pacchetto: 63-VFBGA
Azione5.488
FLASH
FLASH - NAND
4Gb (256M x 16)
Parallel
-
-
-
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
MX29LV400CTTI-55Q
Macronix

IC FLASH 4MBIT 55NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
pacchetto: 48-TFSOP (0.724", 18.40mm Width)
Azione2.000
FLASH
FLASH - NOR
4Mb (512K x 8)
Parallel
-
55ns
55ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
MX29LV800CTXEC-90G
Macronix

IC FLASH 8MBIT 90NS 48LFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LFBGA, CSPBGA
  • Supplier Device Package: 48-LFBGA, CSP (6x8)
pacchetto: 48-LFBGA, CSPBGA
Azione3.216
FLASH
FLASH - NOR
8Mb (1M x 8)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-LFBGA, CSPBGA
48-LFBGA, CSP (6x8)
SST25VF040B-50-4I-S2AE-T
Microchip Technology

IC FLASH 4MBIT 50MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 50MHz
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.209", 5.30mm Width)
Azione5.392
FLASH
FLASH
4Mb (512K x 8)
SPI
50MHz
10µs
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
hot DS1225AB-200+
Maxim Integrated

IC NVSRAM 64KBIT 200NS 28EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 200ns
  • Access Time: 200ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 28-EDIP
pacchetto: 28-DIP Module (0.600", 15.24mm)
Azione4.784
NVSRAM
NVSRAM (Non-Volatile SRAM)
64Kb (8K x 8)
Parallel
-
200ns
200ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Through Hole
28-DIP Module (0.600", 15.24mm)
28-EDIP
MR45V032AMAZBATL
Rohm Semiconductor

IC FRAM 32KBIT 15MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 15MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.504
FRAM
FRAM (Ferroelectric RAM)
32Kb (4K x 8)
SPI
15MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot MX30LF1G18AC-XKI
Macronix

IC FLASH

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
pacchetto: 63-VFBGA
Azione26.112
FLASH
FLASH - NAND
1Gb (128M x 8)
Parallel
-
20ns
20ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
NM24C08M
ON Semiconductor

IC EEPROM 8K I2C 100KHZ 14SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: I²C
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 3.5µs
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
pacchetto: 14-SOIC (0.154", 3.90mm Width)
Azione3.248
EEPROM
EEPROM
8Kb (1K x 8)
I²C
100kHz
10ms
3.5µs
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
MT25QL128ABB1EW7-CAUT TR
Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8WPDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WPDFN (6x5)(MLP8)
pacchetto: 8-WDFN Exposed Pad
Azione2.160
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI
133MHz
8ms, 2.8ms
-
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WPDFN (6x5)(MLP8)
MT29F8G08ABACAH4-ITS:C TR
Micron Technology Inc.

IC FLASH 8G PARALLEL FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.424
FLASH
FLASH - NAND
8Gb (1G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
CY15B102QN-50LHXIT
Infineon Technologies

IC FRAM 2MBIT SPI 50MHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 2Mbit
  • Memory Interface: SPI
  • Clock Frequency: 50 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8 ns
  • Voltage - Supply: 1.8V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN (5x6)
pacchetto: -
Request a Quote
FRAM
FRAM (Ferroelectric RAM)
2Mbit
SPI
50 MHz
-
8 ns
1.8V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-DFN (5x6)
IS34ML02G081-BLI-TR
ISSI, Integrated Silicon Solution Inc

2 Gbit(x8, 1 bit ECC), 63 BALL V

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 20 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND (SLC)
2Gbit
Parallel
-
25ns
20 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
MX35UF4G24AD-Z4I
Macronix

MEMORY

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 4Gbit
  • Memory Interface: SPI
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND (SLC)
4Gbit
SPI
166 MHz
-
5 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)
SM662PXA-BDAT
Silicon Motion, Inc.

IC FLASH 128GBIT EMMC 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 128Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-BGA (11.5x13)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND (TLC)
128Gbit
eMMC
-
-
-
-
-25°C ~ 85°C
Surface Mount
153-TFBGA
153-BGA (11.5x13)
FM24C17ULN
Fairchild Semiconductor

IC EEPROM 16KBIT I2C 100KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kbit
  • Memory Interface: I2C
  • Clock Frequency: 100 kHz
  • Write Cycle Time - Word, Page: 15ms
  • Access Time: 3.5 µs
  • Voltage - Supply: 2.7V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
pacchetto: -
Request a Quote
EEPROM
EEPROM
16Kbit
I2C
100 kHz
15ms
3.5 µs
2.7V ~ 5.5V
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
CY7C1620KV18-300BZC
Cypress Semiconductor Corp

IC SRAM 144MBIT PAR 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II
  • Memory Size: 144Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 300 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
pacchetto: -
Request a Quote
SRAM
SRAM - Synchronous, DDR II
144Mbit
Parallel
300 MHz
-
-
1.7V ~ 1.9V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
CY62148ELL-55SXAKJ
Cypress Semiconductor Corp

ASYNC RAM

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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70V18S12PFI8
Renesas Electronics Corporation

IC RAM DUAL PORT

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  • Supplier Device Package: -
pacchetto: -
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