Pagina 513 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  513/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS29GL128S-10DHV020
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.456
FLASH
FLASH - NOR
128Mb (16M x 8)
Parallel
-
60ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
EDFP112A3PB-JDTJ-F-R TR
Micron Technology Inc.

LPDDR3 192MX128 PLASTIC GREEN UF

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.088
-
-
-
-
-
-
-
-
-
-
-
-
MTFC8GLDEA-1M WT TR
Micron Technology Inc.

IC FLASH 64GBIT 153WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-WFBGA
  • Supplier Device Package: 153-WFBGA (11.5x13)
pacchetto: 153-WFBGA
Azione2.752
FLASH
FLASH - NAND
64Gb (8G x 8)
MMC
-
-
-
1.65 V ~ 3.6 V
-25°C ~ 85°C (TA)
Surface Mount
153-WFBGA
153-WFBGA (11.5x13)
AS6C4016A-55BIN
Alliance Memory, Inc.

IC SRAM 4MBIT 55NS 48TFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
pacchetto: 48-LFBGA
Azione7.264
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
55ns
55ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-LFBGA
48-TFBGA (6x8)
MT29C1G12MAACVAMD-5 E IT
Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (64M x 16)(NAND), 512Mb (32M x 16)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 130-VFBGA
  • Supplier Device Package: 130-VFBGA (8x9)
pacchetto: 130-VFBGA
Azione2.576
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (64M x 16)(NAND), 512Mb (32M x 16)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
MT41J256M4JP-125:G
Micron Technology Inc.

IC SDRAM 1GBIT 800MHZ 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (256M x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (8x11.5)
pacchetto: 78-TFBGA
Azione5.008
DRAM
SDRAM - DDR3
1Gb (256M x 4)
Parallel
800MHz
-
-
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x11.5)
CY7C1470BV25-167BZC
Cypress Semiconductor Corp

IC SRAM 72MBIT 167MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.4ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
pacchetto: 165-LBGA
Azione3.728
SRAM
SRAM - Synchronous
72Mb (2M x 36)
Parallel
167MHz
-
3.4ns
2.375 V ~ 2.625 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
NAND256W3A0BZA6E
Micron Technology Inc.

IC FLASH 256MBIT 50NS 55VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50ns
  • Access Time: 50ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 55-TFBGA
  • Supplier Device Package: 55-VFBGA (8x10)
pacchetto: 55-TFBGA
Azione5.168
FLASH
FLASH - NAND
256Mb (32M x 8)
Parallel
-
50ns
50ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
55-TFBGA
55-VFBGA (8x10)
CY7C1354C-167AXC
Cypress Semiconductor Corp

IC SRAM 9MBIT 167MHZ 100LQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
pacchetto: 100-LQFP
Azione7.984
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
167MHz
-
3.5ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
CY7C109BN-20ZXCT
Cypress Semiconductor Corp

IC SRAM 1MBIT 20NS 32TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP I
pacchetto: 32-TFSOP (0.724", 18.40mm Width)
Azione7.696
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP I
hot AT24C512-10PI-2.7
Microchip Technology

IC EEPROM 512KBIT 1MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 550ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione179.136
EEPROM
EEPROM
512Kb (64K x 8)
I2C
1MHz
10ms
550ns
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
AT28C010-15EM/883
Microchip Technology

IC EEPROM 1MBIT 150NS 32CLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-CLCC
  • Supplier Device Package: 32-CLCC (13.97x11.43)
pacchetto: 32-CLCC
Azione5.616
EEPROM
EEPROM
1Mb (128K x 8)
Parallel
-
10ms
150ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TC)
Surface Mount
32-CLCC
32-CLCC (13.97x11.43)
JS28F00AP30EFA
Micron Technology Inc.

IC FLASH 1GBIT 110NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 110ns
  • Access Time: 110ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP (14x20)
pacchetto: 56-TFSOP (0.724", 18.40mm Width)
Azione7.440
FLASH
FLASH - NOR
1Gb (64M x 16)
Parallel
40MHz
110ns
110ns
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP (14x20)
BR25L010FVJ-WE2
Rohm Semiconductor

IC EEPROM 1KBIT 5MHZ 8TSSOP-J

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 5MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-TSSOP-J
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione2.896
EEPROM
EEPROM
1Kb (128 x 8)
SPI
5MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-TSSOP-J
93C56BT-E/ST
Microchip Technology

IC EEPROM 2KBIT 2MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (128 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 2ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione7.920
EEPROM
EEPROM
2Kb (128 x 16)
SPI
2MHz
2ms
-
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
CY7C1381KVE33-133AXI
Cypress Semiconductor Corp

IC SRAM 18MBIT 133MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6.5ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
pacchetto: 100-LQFP
Azione5.680
SRAM
SRAM - Synchronous
18Mb (512K x 36)
Parallel
133MHz
-
6.5ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
BR24L32FVT-WE2
Rohm Semiconductor

IC EEPROM 32KBIT 400KHZ 8TSSOP-B

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP-B
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione4.800
EEPROM
EEPROM
32Kb (4K x 8)
I2C
400kHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP-B
hot AT24CM01-XHM-T
Microchip Technology

IC EEPROM 1MBIT 1MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione1.399.404
EEPROM
EEPROM
1Mb (128K x 8)
I2C
1MHz
5ms
550ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
S29WS256PABBFW000
Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 84FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 80ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-VFBGA
  • Supplier Device Package: 84-FBGA (11.6x8)
pacchetto: 84-VFBGA
Azione2.352
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
104MHz
60ns
80ns
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
Surface Mount
84-VFBGA
84-FBGA (11.6x8)
S25FL256LAGMFB003
Cypress Semiconductor Corp

IC NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.295", 7.50mm Width)
Azione6.256
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI - Quad I/O, QPI
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
IS42S32400J-6TLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 86TSOP II

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
pacchetto: -
Request a Quote
DRAM
SDRAM
128Mbit
LVTTL
166 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
AS6C1608B-55TIN
Alliance Memory, Inc.

IC SRAM 16MBIT PARALLEL 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: -
Azione888
SRAM
SRAM - Asynchronous
16Mbit
Parallel
-
55ns
55 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
S25FL128P0XMFI013
Cypress Semiconductor Corp

IC FLASH 128MBIT SPI 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: SPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: -
Request a Quote
FLASH
FLASH - NOR
128Mbit
SPI
104 MHz
3ms
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
SM662PXE-BESS
Silicon Motion, Inc.

IC FLASH 640GBIT EMMC 100BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 640Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-BGA (14x18)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND (SLC)
640Gbit
eMMC
-
-
-
-
-25°C ~ 85°C
Surface Mount
100-LBGA
100-BGA (14x18)
71V547S100PF
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR (ZBT)
  • Memory Size: 4.5Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 10 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: -
Request a Quote
SRAM
SRAM - Synchronous, SDR (ZBT)
4.5Mbit
Parallel
-
-
10 ns
3.135V ~ 3.465V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IS43TR81280CL-107MBL
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PAR 78TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (8x10.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - DDR3L
1Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (8x10.5)
MTFC128GBCAVTC-AAT
Micron Technology Inc.

UFS 1T LFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
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CG7480ATT
Infineon Technologies

IC SRAM 8MBIT PARALLEL 44TSOP II

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 8Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: -
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SRAM
SRAM
8Mbit
Parallel
-
15ns
15 ns
3V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II