Pagina 309 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  309/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DS1245XP-70IND+
Maxim Integrated

IC NVSRAM 1MBIT PCM MODULE

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.032
-
-
-
-
-
-
-
-
-
-
-
-
hot CY7C09289V-9AI
Cypress Semiconductor Corp

IC SRAM 1MBIT 9NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 67MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 9ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione5.968
SRAM
SRAM - Dual Port, Synchronous
1Mb (64K x 16)
Parallel
67MHz
-
9ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IS45S16400F-6BLA1-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 54TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
pacchetto: 54-TFBGA
Azione2.272
DRAM
SDRAM
64Mb (4M x 16)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
CY7C1339G-100AXC
Cypress Semiconductor Corp

IC SRAM 4MBIT 100MHZ 100LQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4Mb (128K x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3.15 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
pacchetto: 100-LQFP
Azione6.304
SRAM
SRAM - Synchronous
4Mb (128K x 32)
Parallel
100MHz
-
5.5ns
3.15 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
MT46V64M8P-75 L:D TR
Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 750ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP
pacchetto: 66-TSSOP (0.400", 10.16mm Width)
Azione5.616
DRAM
SDRAM - DDR
512Mb (64M x 8)
Parallel
133MHz
15ns
750ps
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP
AT49F001-70TI
Microchip Technology

IC FLASH 1MBIT 70NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
pacchetto: 32-TFSOP (0.724", 18.40mm Width)
Azione7.744
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
50µs
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
AT27C516-70VI
Microchip Technology

IC OTP 512KBIT 70NS 40VSOP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 512Kb (32K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 40-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 40-VSOP
pacchetto: 40-TFSOP (0.488", 12.40mm Width)
Azione7.824
EPROM
EPROM - OTP
512Kb (32K x 16)
Parallel
-
-
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
40-TFSOP (0.488", 12.40mm Width)
40-VSOP
AT27C512R-12RI
Microchip Technology

IC OTP 512KBIT 120NS 28SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.342", 8.69mm Width)
  • Supplier Device Package: 28-SOIC
pacchetto: 28-SOIC (0.342", 8.69mm Width)
Azione2.128
EPROM
EPROM - OTP
512Kb (64K x 8)
Parallel
-
-
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
28-SOIC (0.342", 8.69mm Width)
28-SOIC
70T633S12BFI
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 12NS 208CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 2.4 V ~ 2.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LFBGA
  • Supplier Device Package: 208-CABGA (15x15)
pacchetto: 208-LFBGA
Azione6.064
SRAM
SRAM - Dual Port, Asynchronous
9Mb (512K x 18)
Parallel
-
12ns
12ns
2.4 V ~ 2.6 V
-40°C ~ 85°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
CY7C1370KVE33-167AXM
Cypress Semiconductor Corp

SYNC SRAMS

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.4ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.648
SRAM
SRAM - Synchronous
18Mb (512K x 36)
Parallel
167MHz
-
3.4ns
3.135 V ~ 3.6 V
-55°C ~ 125°C (TC)
-
-
-
70V34S20PF8
IDT, Integrated Device Technology Inc

IC SRAM 72KBIT 20NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 72Kb (4K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione5.296
SRAM
SRAM - Dual Port, Asynchronous
72Kb (4K x 18)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
71321SA55PF
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 55NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
pacchetto: 64-LQFP
Azione4.096
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
MT48LC16M16A2P-7E:G TR
Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
pacchetto: 54-TSOP (0.400", 10.16mm Width)
Azione4.448
DRAM
SDRAM
256Mb (16M x 16)
Parallel
133MHz
14ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
CY62147EV18LL-55BVXIT
Cypress Semiconductor Corp

IC SRAM 4MBIT 55NS 48VFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 1.65 V ~ 2.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
pacchetto: 48-VFBGA
Azione5.616
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
55ns
55ns
1.65 V ~ 2.25 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
IS25LQ016B-JNLE-TR
ISSI, Integrated Silicon Solution Inc

IC FLASH 16MBIT 104MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 1ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.584
FLASH
FLASH - NOR
16Mb (2M x 8)
SPI - Quad I/O
104MHz
1ms
-
2.3 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SST39LF802C-55-4C-EKE-T
Microchip Technology

IC FLASH 8MBIT 55NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: 55ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-WFBGA
  • Supplier Device Package: 48-TSOP
pacchetto: 48-WFBGA
Azione7.024
FLASH
FLASH
8Mb (512K x 16)
Parallel
-
10µs
55ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-WFBGA
48-TSOP
W25Q16FWSVIQ TR
Winbond Electronics

IC FLASH 16MBIT 104MHZ 8VSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-VSOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.928
FLASH
FLASH - NOR
16Mb (2M x 8)
SPI
104MHz
3ms
-
1.65 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-VSOP
93AA66B-I/P
Microchip Technology

IC EEPROM 4KBIT 2MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione7.936
EEPROM
EEPROM
4Kb (256 x 16)
SPI
2MHz
6ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
RC28F320C3TA110
Intel

IC FLASH 32MBIT 110NS 64EASYBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - Boot Block
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 110ns
  • Access Time: 110ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-EasyBGA (10x13)
pacchetto: 64-TBGA
Azione6.032
FLASH
FLASH - Boot Block
32Mb (2M x 16)
Parallel
-
110ns
110ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-TBGA
64-EasyBGA (10x13)
FT25C64A-UTR-B
Fremont Micro Devices USA

IC EEPROM 64KBIT 20MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione10.464
EEPROM
EEPROM
64Kb (8K x 8)
SPI
20MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
71V416S12PHG
IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 12NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione9.468
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
MT29F2T08EMHAFJ4-3T:A TR
Micron Technology Inc.

IC FLASH 2T PARALLEL 333MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Tb (256G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.360
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F4G08ABAFAWP-AAT:F TR
Micron Technology Inc.

IC FLASH 4G PARALLEL 48TSOP1

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
pacchetto: 48-TFSOP (0.724", 18.40mm Width)
Azione7.616
FLASH
FLASH - NAND (SLC)
4Gb (512M x 8)
Parallel
-
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TC)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
CY7C1356A-133AI
Cypress Semiconductor Corp

IC SRAM 9MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR
  • Memory Size: 9Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
pacchetto: -
Request a Quote
SRAM
SRAM - Synchronous, SDR
9Mbit
Parallel
133 MHz
-
4.2 ns
3.135V ~ 3.465V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
MT62F3G32D8DV-026-AIT-B
Micron Technology Inc.

LPDDR5 96GBIT 64 315/315 LFBGA 8

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 96Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 3.2 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 95°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
96Gbit
Parallel
3.2 GHz
-
-
-
-40°C ~ 95°C
-
-
-
CAT25640VI-GT3JN
onsemi

IC EEPROM 64KBIT SPI 10MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kbit
  • Memory Interface: SPI
  • Clock Frequency: 10 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Request a Quote
EEPROM
EEPROM
64Kbit
SPI
10 MHz
5ms
-
1.8V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MT53E512M64D2NZ-46-WT-B
Micron Technology Inc.

IC DRAM 32GBIT PAR 376WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 376-WFBGA
  • Supplier Device Package: 376-WFBGA (14x14)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
32Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-25°C ~ 85°C (TC)
Surface Mount
376-WFBGA
376-WFBGA (14x14)
NDS36PT5-20IT-TR
Insignis Technology Corporation

SDR 256MB X16 TSOPII 54L 10X22(X

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 4.5 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
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DRAM
SDRAM
256Mbit
LVTTL
200 MHz
10ns
4.5 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II