Pagina 2217 - Memoria | Circuiti integrati (CI) | Heisener Electronics
Contattaci
SalesDept@heisener.com 86-755-83210559-802
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Memoria

Record 62.144
Pagina  2.217/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot AT24C08D-PUM
Microchip Technology

IC EEPROM 8KBIT 1MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 4.5µs
  • Voltage - Supply: 1.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione5.856
EEPROM
EEPROM
8Kb (1K x 8)
I2C
1MHz
5ms
4.5µs
1.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
PC28F512G18AE
Micron Technology Inc.

IC FLASH 512MBIT 96NS 64EASYBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 96ns
  • Access Time: 96ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-EasyBGA (8x10)
pacchetto: 64-TBGA
Azione3.648
FLASH
FLASH - NOR
512Mb (32M x 16)
Parallel
133MHz
96ns
96ns
1.7 V ~ 2 V
-30°C ~ 85°C (TC)
Surface Mount
64-TBGA
64-EasyBGA (8x10)
hot MT29F512G08CUCABH3-12:A
Micron Technology Inc.

IC FLASH 512GBIT 83MHZ 100LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-LBGA (12x18)
pacchetto: 100-LBGA
Azione4.864
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LBGA
100-LBGA (12x18)
IS42S32200E-6BL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 90FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
pacchetto: 90-TFBGA
Azione2.576
DRAM
SDRAM
64Mb (2M x 32)
Parallel
166MHz
-
5.5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
AT49BV802AT-70TI-T
Microchip Technology

IC FLASH 8MBIT 70NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 8Mb (1M x 8, 512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 200µs
  • Access Time: 70ns
  • Voltage - Supply: 2.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
pacchetto: 48-TFSOP (0.724", 18.40mm Width)
Azione6.240
FLASH
FLASH
8Mb (1M x 8, 512K x 16)
Parallel
-
200µs
70ns
2.65 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
MT48H4M16LFF4-8
Micron Technology Inc.

IC SDRAM 64MBIT 125MHZ 54VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 6ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (8x8)
pacchetto: 54-VFBGA
Azione5.168
DRAM
SDRAM - Mobile LPSDR
64Mb (4M x 16)
Parallel
125MHz
15ns
6ns
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
AT27C080-12RI
Microchip Technology

IC OTP 8MBIT 120NS 32SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.445", 11.30mm Width)
  • Supplier Device Package: 32-SOIC
pacchetto: 32-SOIC (0.445", 11.30mm Width)
Azione4.144
EPROM
EPROM - OTP
8Mb (1M x 8)
Parallel
-
-
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-SOIC (0.445", 11.30mm Width)
32-SOIC
70V24L20J
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 20NS 84PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (4K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LCC (J-Lead)
  • Supplier Device Package: 84-PLCC (29.21x29.21)
pacchetto: 84-LCC (J-Lead)
Azione3.824
SRAM
SRAM - Dual Port, Asynchronous
64Kb (4K x 16)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
84-LCC (J-Lead)
84-PLCC (29.21x29.21)
hot IS42S32800G-7BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
pacchetto: 90-TFBGA
Azione15.936
DRAM
SDRAM
256Mb (8M x 32)
Parallel
143MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
S25FL256LDPBHV030
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.568
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI - Quad I/O, QPI
66MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
71V016SA10BFGI8
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 10NS 48CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.15 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LFBGA
  • Supplier Device Package: 48-CABGA (7x7)
pacchetto: 48-LFBGA
Azione5.888
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
10ns
10ns
3.15 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-LFBGA
48-CABGA (7x7)
24AA256T-I/MNY
Microchip Technology

IC EEPROM 256KBIT 400KHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
pacchetto: 8-WFDFN Exposed Pad
Azione7.200
EEPROM
EEPROM
256Kb (32K x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
25LC160C-I/ST
Microchip Technology

IC EEPROM 16KBIT 10MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione7.392
EEPROM
EEPROM
16Kb (2K x 8)
SPI
10MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
93C86CT-E/ST
Microchip Technology

IC EEPROM 16KBIT 3MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8, 1K x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 2ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione3.408
EEPROM
EEPROM
16Kb (2K x 8, 1K x 16)
SPI
3MHz
2ms
-
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
11LC080T-I/TT
Microchip Technology

IC EEPROM 8KBIT 100KHZ SOT23-3

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Single Wire
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione7.392
EEPROM
EEPROM
8Kb (1K x 8)
Single Wire
100kHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
S34ML08G201BHA000
Cypress Semiconductor Corp

IC FLASH

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione8.304
FLASH
FLASH - NAND
8Gb (1G x 8)
Parallel
-
25ns
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
MT53B512M32D2DS-053 AAT:E
Micron Technology Inc.

IC DRAM 16G 1866MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 16Gb (512M x 32)
  • Memory Interface: -
  • Clock Frequency: 1866MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.520
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1866MHz
-
-
1.1V
-40°C ~ 105°C (TA)
-
-
-
70V25L45J8
IDT, Integrated Device Technology Inc

IC SRAM 128K PARALLEL 84PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (8K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LCC (J-Lead)
  • Supplier Device Package: 84-PLCC (29.21x29.21)
pacchetto: 84-LCC (J-Lead)
Azione2.704
SRAM
SRAM - Dual Port, Asynchronous
128Kb (8K x 16)
Parallel
-
45ns
45ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
84-LCC (J-Lead)
84-PLCC (29.21x29.21)
CY62147DV18LL-70BVIT
Cypress Semiconductor Corp

IC SRAM 4MBIT PARALLEL 48VFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70 ns
  • Voltage - Supply: 1.65V ~ 2.25V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous
4Mbit
Parallel
-
70ns
70 ns
1.65V ~ 2.25V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
CY7C1021BN-15VXEKJ
Cypress Semiconductor Corp

IC SRAM 1MBIT PARALLEL 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous
1Mbit
Parallel
-
15ns
15 ns
4.5V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
M10082040108X0ISAY
Renesas Electronics Corporation

IC RAM 8MBIT 108MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 8Mbit
  • Memory Interface: -
  • Clock Frequency: 108 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.71V ~ 2V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Request a Quote
RAM
MRAM (Magnetoresistive RAM)
8Mbit
-
108 MHz
-
-
1.71V ~ 2V
-40°C ~ 85°C
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
IS61WV20488FBLL-8TLI
ISSI, Integrated Silicon Solution Inc

16Mb,High-Speed,Async,2Mbx8,8ns,

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 8ns
  • Access Time: 8 ns
  • Voltage - Supply: 2.4V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous
16Mbit
Parallel
-
8ns
8 ns
2.4V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
MT53E1G64D4NZ-046-WT-ES-C-TR
Micron Technology Inc.

LPDDR4 64GBIT 64 376/1156 WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 64Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 376-WFBGA
  • Supplier Device Package: 376-WFBGA (14x14)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
64Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-30°C ~ 85°C (TC)
Surface Mount
376-WFBGA
376-WFBGA (14x14)
SM671PXD-ADSS
Silicon Motion, Inc.

IC FLASH 320GBIT UFS3.1 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 320Gbit
  • Memory Interface: UFS3.1
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-BGA (11.5x13)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND (SLC)
320Gbit
UFS3.1
-
-
-
-
-25°C ~ 85°C
Surface Mount
153-TFBGA
153-BGA (11.5x13)
GD25LB16ESIGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 16Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 60µs, 2.4ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.65V ~ 2.1V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Request a Quote
FLASH
FLASH - NOR (SLC)
16Mbit
SPI - Quad I/O, QPI
133 MHz
60µs, 2.4ms
6 ns
1.65V ~ 2.1V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOP
SM662PXD-BFST-1
Silicon Motion, Inc.

IC FLASH 1TBIT EMMC 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 1Tbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-BGA (11.5x13)
pacchetto: -
Azione459
FLASH
FLASH - NAND (TLC)
1Tbit
eMMC
-
-
-
-
-25°C ~ 85°C
Surface Mount
153-TFBGA
153-BGA (11.5x13)
CY62256VNLL-70ZC
Cypress Semiconductor Corp

IC SRAM 256KBIT PAR 28TSOP I

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP I
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous
256Kbit
Parallel
-
70ns
70 ns
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP I
S-93A46BD0A-A8T1U3
ABLIC Inc.

LINEAR IC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 2 MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: -
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: HSNT-8-A
pacchetto: -
Request a Quote
EEPROM
EEPROM
1Kbit
Microwire
2 MHz
4ms
-
2.5V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SMD, Flat Lead Exposed Pad
HSNT-8-A