Pagina 1384 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  1.384/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS43LR32800F-6BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
pacchetto: 90-TFBGA
Azione4.912
DRAM
SDRAM - Mobile DDR
256Mb (8M x 32)
Parallel
166MHz
15ns
5.5ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
hot M36L0R7050U3ZSE
Micron Technology Inc.

IC FLASH PSRAM 160M

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione74.748
-
-
-
-
-
-
-
-
-
-
-
-
IDT71V3558S100BQI8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 100MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
pacchetto: 165-TBGA
Azione4.304
SRAM
SRAM - Synchronous ZBT
4.5Mb (256K x 18)
Parallel
100MHz
-
5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
CY7C1514V18-167BZC
Cypress Semiconductor Corp

IC SRAM 72MBIT 167MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
pacchetto: 165-LBGA
Azione4.224
SRAM
SRAM - Synchronous, QDR II
72Mb (2M x 36)
Parallel
167MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
PC28F160C3TD70A
Micron Technology Inc.

IC FLASH 16MBIT 70NS 64EASYBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - Boot Block
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-EasyBGA (10x13)
pacchetto: 64-TBGA
Azione4.128
FLASH
FLASH - Boot Block
16Mb (1M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-TBGA
64-EasyBGA (10x13)
hot AT29C020-15PC
Microchip Technology

IC FLASH 2MBIT 150NS 32DIP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP (0.600", 15.24mm)
  • Supplier Device Package: 32-DIP
pacchetto: 32-DIP (0.600", 15.24mm)
Azione4.944
FLASH
FLASH
2Mb (256K x 8)
Parallel
-
10ms
150ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Through Hole
32-DIP (0.600", 15.24mm)
32-DIP
70V3569S4BF8
IDT, Integrated Device Technology Inc

IC SRAM 576KBIT 4.2NS 208CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 576Kb (16K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LFBGA
  • Supplier Device Package: 208-CABGA (15x15)
pacchetto: 208-LFBGA
Azione6.544
SRAM
SRAM - Dual Port, Synchronous
576Kb (16K x 36)
Parallel
-
-
4.2ns
3.15 V ~ 3.45 V
0°C ~ 70°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
IS61DDP2B251236A-400M3L
ISSI, Integrated Silicon Solution Inc

IC SDRAM 18MBIT 400MHZ 165BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR IIP
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.71 V ~ 1.89 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-LFBGA (15x17)
pacchetto: 165-LBGA
Azione5.616
SRAM
SRAM - Synchronous, DDR IIP
18Mb (512K x 36)
Parallel
400MHz
-
-
1.71 V ~ 1.89 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-LFBGA (15x17)
MR20H40CDFR
Everspin Technologies Inc.

IC MRAM 4MBIT 50MHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 50MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP, Small Flag (5x6)
pacchetto: 8-VDFN Exposed Pad
Azione7.376
RAM
MRAM (Magnetoresistive RAM)
4Mb (512K x 8)
SPI
50MHz
-
-
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-VDFN Exposed Pad
8-DFN-EP, Small Flag (5x6)
71321LA55TFG8
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 55NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP
pacchetto: 64-LQFP
Azione2.800
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP
MT47H128M4SH-25E:H
Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (128M x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (8x10)
pacchetto: 60-TFBGA
Azione7.728
DRAM
SDRAM - DDR2
512Mb (128M x 4)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
60-TFBGA
60-FBGA (8x10)
34LC02-E/ST
Microchip Technology

IC EEPROM 2KBIT 1MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 400ns
  • Voltage - Supply: 2.2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione2.752
EEPROM
EEPROM
2Kb (256 x 8)
I2C
1MHz
5ms
400ns
2.2 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
93C46B-E/MS
Microchip Technology

IC EEPROM 1KBIT 2MHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (64 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 2ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione4.144
EEPROM
EEPROM
1Kb (64 x 16)
SPI
2MHz
2ms
-
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
CY7C1041GE30-10BVXI
Cypress Semiconductor Corp

IC SRAM 4MBIT 10NS 48VFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
pacchetto: 48-VFBGA
Azione7.824
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
25AA128-I/P
Microchip Technology

IC EEPROM 128KBIT 10MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione7.344
EEPROM
EEPROM
128Kb (16K x 8)
SPI
10MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
CY7C1049G30-10ZSXI
Cypress Semiconductor Corp

IC SRAM 4MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione7.584
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
10ns
10ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
hot 93AA46AT-I/OT
Microchip Technology

IC EEPROM 1KBIT 2MHZ SOT23-6

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacchetto: SOT-23-6
Azione9.636
EEPROM
EEPROM
1Kb (128 x 8)
SPI
2MHz
6ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
SOT-23-6
SOT-23-6
BR25S128FVT-WE2
Rohm Semiconductor

IC EEPROM 128KBIT 20MHZ 8TSSOP-B

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP-B
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione29.232
EEPROM
EEPROM
128Kb (16K x 8)
SPI
20MHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP-B
CY7C1059DV33-10ZSXI
Cypress Semiconductor Corp

IC SRAM 8MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione6.564
SRAM
SRAM - Asynchronous
8Mb (1M x 8)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
MX29LV160DBXGI-70G
Macronix

IC FLASH 16MBIT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.560
-
-
-
-
-
-
-
-
-
-
-
-
MT29F256G08CMCABH2-12ITZ:A
Micron Technology Inc.

IC FLASH 256G PARALLEL 100TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-TBGA
  • Supplier Device Package: 100-TBGA (12x18)
pacchetto: 100-TBGA
Azione4.624
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-TBGA
100-TBGA (12x18)
MSR630AGE-2512
MoSys, Inc.

IC MEMORY BW BURST 1GB FCBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
S-93C56CD0H-A8T1U3
ABLIC Inc.

LINEAR IC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 2 MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: -
  • Voltage - Supply: 1.6V ~ 5.5V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: HSNT-8-A
pacchetto: -
Request a Quote
EEPROM
EEPROM
2Kbit
Microwire
2 MHz
4ms
-
1.6V ~ 5.5V
-40°C ~ 105°C (TA)
Surface Mount
8-SMD, Flat Lead Exposed Pad
HSNT-8-A
043641WLAD-5
IBM

IC SRAM 4MBIT HSTL 119BGA

  • Memory Type: -
  • Memory Format: SRAM
  • Technology: -
  • Memory Size: 4Mbit
  • Memory Interface: HSTL
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3.3V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 119-BBGA
  • Supplier Device Package: 119-BGA (17x7)
pacchetto: -
Request a Quote
SRAM
-
4Mbit
HSTL
-
-
-
3.3V
-
Surface Mount
119-BBGA
119-BGA (17x7)
BY25Q16ESTJG-T
BYTe Semiconductor

16 MBIT, 3.0V (2.7V TO 3.6V), -4

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 16Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 108 MHz
  • Write Cycle Time - Word, Page: 50µs, 2.4ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Request a Quote
FLASH
FLASH - NOR (SLC)
16Mbit
SPI - Quad I/O, QPI
108 MHz
50µs, 2.4ms
7 ns
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
UPD46185184BF1-E40Y-EQ1-A
Renesas Electronics Corporation

QDR SRAM, 1MX18, 0.45NS

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
RMLV3216AGBG-5S2-AC0
Renesas Electronics Corporation

SRAM 32MB 3V X16 FBGA48 55NS -40

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 32Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (7.5x8.5)
pacchetto: -
Azione840
SRAM
SRAM - Asynchronous
32Mbit
Parallel
-
55ns
55 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (7.5x8.5)
MT58V512V32DT-7-5
Micron Technology Inc.

IC SRAM 18MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Standard
  • Memory Size: 18Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2 ns
  • Voltage - Supply: 2.375V ~ 2.625V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
pacchetto: -
Request a Quote
SRAM
SRAM - Standard
18Mbit
Parallel
133 MHz
-
4.2 ns
2.375V ~ 2.625V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)